Wing Shing Electronic Co manufacturer of power semiconductors 2SC3039 Datasheet

GENERAL DESCRIPTION

g

j

(BR)

Silicon Epitaxial Planar Transistor

Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

V
V
I
I
P
V
V
t

CESM

CEO
C
CM

tot

CEsat

F
f

Collector-emitter voltage peak value VBE = 0V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage IC = 3.0A; IB = 0.3A
Diode for war d vol ta ge IF = 3.0A 1.5 2.0 V
Fall time IC=3A,IB1=-IB2=0.3A,VCC=60V 0.4 1.0 s

TO-220

-

-

-

500 V
300 V

7A

-

-

-

50 W

2V

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V
V
V
I
I
P
T
T

CESM
CEO

EBO
C
B

tot

st

Collector-emitter voltage peak value VBE = 0V - 500 V
Collector-emitter voltage (open base) - 300 V
Emitter-base oltage (open colloctor) 5 V
Collector current (DC) - 7 A
Base current (DC) - 2 A
Total power dissipation Tmb 25 -50W
Storage temperature -55 150
Junction temperature - 150

A

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

I

CBO

I

EBO

V

CEO

V

CEsat

h

FE

f

T

C

c

t

on

t

s

t

f

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

Collector-base cut-off current VCB=400V - 0.2 mA
Emitter-base cut-off current VEB=5V - 0.2 mA
Collector-emitter breakdown voltage IC=1mA 300 V
Collector-emitter saturation voltages IC = 2.0A; IB = 0.5A - 2 V
DC current gain IC = 0.8A; VCE = 5V 15 100
Transition frequency at f = 5MHz IC = 1A; VCE = 12V 25 - MHz
Collector capacitance at f = 1MHz VCB = 10V 120 - pF
On times IC=3A,IB1=-IB2=0.3A,VCC=60V 1.0 us
Tum-off storage time IC=3A,IB1=-IB2=0.3A,VCC=60V 2.5 us
Fall time IC=3A,IB1=-IB2=0.3A,VCC=60V 0.4 1.0 us