Wing Shing Electronic Co manufacturer of power semiconductors 2SC2922 Datasheet

GENERAL DESCRIPTION

g

j

(BR)

2SC2922

Silicon Epitaxial Planar Transistor

High frequency, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

V
V
I
I
P
V
V
t

CBO

CEO
C
CM

tot

CEsat

F
f

Collector-emitter voltage peak value VBE = 0V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage IC = 8.0A; IB = 0.8A
Diode for war d vol ta ge IF = 8.0A 1.5 2.0 V
Fall time IC=8A,IB1=-IB2=1A,VCC=40V 0.45 1.0 s

MT-200

-

-

-

180 V
180 V

17 A

-

-

-

200 W

3V

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V
V
V
I
I
P
T
T

CESM
CEO

EBO
C
B

tot

st

Collector-emitter voltage peak value VBE = 0V - 180 V
Collector-emitter voltage (open base) - 180 V
Emitter-base oltage (open colloctor) 5 V
Collector current (DC) - 17 A
Base current (DC) - 5 A
Total power dissipation Tmb 25 -200W
Storage temperature -55 150
Junction temperature - 150

A

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

I

CBO

I

EBO

V

CEO

V

CEsat

h

FE

f

T

C

c

t

on

t

s

t

f

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

Collector-base cut-off current VCB=180V - 0.2 mA
Emitter-base cut-off current VEB=5V - 0.2 mA
Collector-emitter breakdown voltage IC=1mA 180
Collector-emitter saturation voltages IC = 8A; IB = 0.8A - 2 V
DC current gain IC = 2A; VCE = 5V 50 200
Transition frequency at f = 5MHz IC = 2A; VCE = 12V 10 - MHz
Collector capacitance at f = 1MHz VCB = 10V,f=1MHZ 250 - pF
On times IC=8A.IB1=-IB2=1A,VCC=40V 0.2 us
Tum-off storage time IC=8A.IB1=-IB2=1A,VCC=40V 1.5 us
Fall time IC=8A.IB1=-IB2=1A,VCC=40V 0.45 1.0 us