Wing Shing Electronic Co manufacturer of power semiconductors 2SC1047 Datasheet

GENERAL DESCRIPTION

V

-

V

-

I

-

I

-AP

-

V

-

V

t

V

V

V

I

I

P

T

T

I

C

B

I

V

V

B

h

C

E

f

C

C

B

t

B

1

B

2

C

C

t

t

B

1

B

2

C

C

2SC1047

Silicon Epitaxial Planar Transistor

High frequency, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

Collector-emitter voltage peak value VBE = 0V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage IC = 4.0A; IB = 0.4A
Diode forward voltage IF = 4.0A 1.5 2.0 V
Fall time IC=4.0A,IB1=-IB2=0.4A,VCC=60V 0.35 1.0 s

MT-100

160 V
140 V

12 A

100 W

3 V

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V - 160 V
Collector-emitter voltage (open base) - 140 V
Emitter-base oltage (open colloctor) 6 V
Collector current (DC) - 12 A
Base current (DC) - 3 A
Total power dissipation Tmb 25 - 100 W
Storage temperature -55 150
Junction temperature - 150

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

Collector-base cut-off current V
Emitter-base cut-off current VEB=5V - 0.2 mA
Collector-emitter breakdown voltage IC=1mA 140 V
Collector-emitter saturation voltages IC = 4.0A; I
DC current gain IC = 1A; V
Transition frequency at f = 5MHz IC = 1A; VCE = 12V 5 - MHz
Collector capacitance at f = 1MHz V
On times IC=4A,I
Tum-off storage time IC=4A,IB1=-IB2=0.4A,VCC=60V us
Fall time IC=4A,I

Wing Shing Computer Components Co., (H.K .)L td. Tel: [phone] Fax : [phone]
Homepage: http: / / www.wingshing.com E-mail: wsccltd@hk star.com

=160V - 0.2 mA

= 0.4A - 2 V

= 5V 50 200

= 10V,f=1MHZ 210 - pF

=-I

=-I

=0.4A,V

=0.4A,V

=60V us

=60V 0.35 1.0 us