Wing Shing Electronic Co manufacturer of power semiconductors 2SB834 Datasheet

2SB834 PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER

! Complement to 2SD880

ABSOLUTE MAXIMUM RATINGS (Ta=25°CCCC)

Characteristic Symbol Rating Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation(Tc=25
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
IC

°

C)

PC
Tj
Tstg

-60

-60

-7

-3

30

150

-50~150

V
V
V
A

W

°

°

C
C

TO-220

ELECTRICAL CHARACTERISTICS (Ta=25°CCCC)

Characterristic Symbol Test Condition Min Typ Max Unit

Collector Cutoff Current
Emitter Cutoff Cu rrent
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product

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ICBO

IEBO
hFE1
hFE2

VCE(sat)

fT

VCB= -60V , IE=0
VEB= -7V, IC=0
VCE= -5V, IC=-0.5A
VCE= -5V, IC=-3A
IC=-3A , IB=-0.3A
VCE= -5V , IC=-0.5A

60
20

-0.4

-100

-100
300

-1.0

9

V
MHZ

µA
µA