2SB507 PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
! Complement to 2SD313
ABSOLUTE MAXIMUM RATINGS (Ta=25°CCCC)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25°c)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
-60
-60
-7
-3
30
150
-50~150
V
V
V
A
W
25°c
25°c
TO-220
ELECTRICAL CHARACTERISTICS (Ta=25°CCCC)
Characterristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Cu rrent
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
ICBO
IEBO
hFE1
VCE(sat)
fT
VCB= -60V , IE=0
VEB= -7V , IC=0
VCE= -2V , IC=-1A
IC=-2A , IB=-0.2A
VCE=- 5V , IC=-0.5A
40
8
-100
-100
320
-1.0
V
MHZ
µA
µA