Wing Shing Electronic Co manufacturer of power semiconductors 2SB1133 Datasheet

2SB1133 PNP EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER
VERTICAL DEFLECTION OUTPUT

SC-67

!

ABSOLUTE MAXIMUM RATINGS (TA=25℃℃℃℃)

Characteristic Symbol Rating Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipat ion (Tc=25
Junction Temperature
Storage Temperature

℃)

V
V
V
I
P
T
Tstg

CBO
CEO
EBO

C

C
j

-60

-60

20

150

-50~150

V

-5

-3

V
V
A

W

℃℃℃℃
℃℃℃℃

ELECTRICAL CHARACTERISTICS (TA=25℃℃℃℃)

Characteristic Symbol Test Condition Min Typ Max Unit

Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product

I

V

CBO

I

EBO

h

FE1

CE(sat)

f

T

VCB= -150V , IE=0

= -5V , IC=0

EB

V
VCE= -2.0V ,IC=-1.0A

=-3A ,IB=-0.3mA

C

I

= -10V ,IC=-0.5A

CE

V

-10

70

60

-10

240

-1.4

µ

A

µ

A

V
MHZ

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