Wing Shing WMBTA92 Datasheet

NPN EPITAXIAL SILICON TRANSISTORS WMBTA92

90

35

1. BASE

2. EMITTER

3. COLLECTOR

*

Die Size 0.6X0.6mm

Power Dissipation: 225mW

Collector Current : Max 500mA

Bonding Pad Size
Emittoe 100*100mkm
base 100*100mkm

*

*

*

High Voltage Transistor

GUARANTEED PROBED CHARACTERISTICS (TA=25 ℃℃℃℃)

Characteristic Symbol Test Conditions

Collector-emitter
Breakdown Voltage

Collector-Base
Breakdown Voltage

Emitter-Base
Breakdown Voltage

V

CEO IC

V

CBO IC

V

EBO IE

=1.0mA 300 - - V

=100uA 300 - - V

=10uA 5.0 - - V

SOT ——23

Limits

Min T yp Max

Units

Collector Cut-off
Current

Emitter Cut-off
Current

I

I

DC Current Gain h

Base-Emitter
Saturation Voltage

Collector-Emitter
Saturation Voltage

V

V

Transition
Frequency

Collector-Base
Capacitance

NOTES:

Due to probe testing limitations, only the DC parameters are tested.

CBO VCB

EBO VEB

VCE=10V, IC=1mA
VCE=10V, IC=10mA

FE

VCE=10V, IC=30mA

BEsat

CEsatIC

f

C

IC=20mA, IB=2mA --0. V

VCE=20V,

r

IC=10mA,f=10MHz
VCB=20V, f=1MHz - - 6.0 pF

cb

=260V - - 100 nA

=6V - - 100 nA

30

40

--

40

=20mA, IB=2mA - - 0. V

50 - - MHz

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