Wing Shing WMBTA42 Datasheet

NPN EPITAXIAL SILICON TRANSISTORS WMBTA42

Power Dissipation: 225mW

*

*

*

*

Collector Current: Max. 500mA

Bonding Pad Size
Emitoe 100*100mkm
Base 100*100mkm

1. BASE

2. EMITTER

3. COLLECTOR

300

-

-

V

0.90

0.35 V

High Voltage Transistor

Die Size 0.6*0.6mm

GUARANTEED PROBED CHARACTERISTICS (TA=25 ℃℃℃℃)

Characteristic Symbol Test Conditions

Collector-emitter
Breakdown Voltage

Collector-Base
Breakdown Voltage

Collector Cut-off
Current

V

CEO IC

V

CBO IC

I

CBO VCB

=1.0mA 300 - - V

=100uA

=260V - - 100 nA

SOT ——23

Limits

Min T yp Max

Units

Emitter Cut-off
Current

I

DC Current Gain h

Base-Emitter
Saturation Voltage

Collector-Emitter
Saturation Voltage

V

V

Transition
Frequency

Collector-Base
Capacitance

NOTES:

Due to probe testing limitations, only the DC parameters are tested.

EBO VEB

VCE=10V, IC=1mA
VCE=10V, IC=10mA

FE

VCE=10V, IC=30mA

BEsat

CEsatIC

f

C

IC=20mA, Ib=2mA

VCE=20V,

r

IC=10mA,f=10MHz
VCB=20V, f=1MHz - - 3.0 pF

cb

=6V - - 100 nA

30
40

--

40

-- V

=20mA, IB=2mA - -

50 - - MHz

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