Wing Shing WMBT5551LT1 Datasheet

1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
Collector–Base Voltage V
CBO
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
TA = 25°C Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
TA = 25°C
Derate above 25°C
P
D
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
q
JA
°C/W
Junction and Storage Temperature TJ, T
stg
–55 to +150 °C
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(3)
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
160
— —
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V
(BR)CBO
180
— —
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
6.0
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
I
CBO
— — — —
50
50
nAdc
µAdc
Emitter Cutoff Current
(VEB = .0 Vdc, IC = 0)
I
EBO
50
nAdc
1
2
3
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
WMBT5551LT1
5
160
180
Transistor
Wing Shing Computer Components Co., (H.K .)L td. Tel: (8 52) 2341 9 2 7 6 Fax : (8 52) 27 9 7 8 153 Homepage: http: / / www.wingshing.com E-mail: wsccltd@ hk star.com
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
h
FE
80
80
— —
250
— —
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
V
CE(sat)
— —
0.15
0.20
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
V
BE(sat)
— —
1.0
1.0
WMBT5551LT1
80
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