Wing Shing WMBT5401LT1 Datasheet

PNP Silicon

WMBT5401LT1

W

CB0

Transistor

COLLECTOR

3

1

BASE

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation

Alumina Substrate,

Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T

(2)

TA = 25°C

DEVICE MARKING

MBT5401LT1 = 2L

CEO
CBO
EBO

P

R

P

R

2

EMITTER

1

–150 Vdc
–160 Vdc

–5.0 Vdc

C

D

q

JA
D

q

JA

stg

–500 mAdc

225

1.8

556 °C/W

–55 to +150 °C

mW

mW/°C

mW

mW/°C

°C/W

SOT–23 (TO–236AB)

3

2

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage

(IC = –100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)
Collector Cutoff Current

(VCB = –120 Vdc, IE = 0)

(VCB = –120 Vdc, IE = 0, TA = 100°C)

Wing Shing Computer Components Co., (H.K .)L td. Tel: [phone] Fax : [phone]
Homepage: http: / / www.wingshing.com E-mail: wsccltd@ hk star.com

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

–150 —

–160 —

–5.0 —

—
—

–50
–50

Vdc

Vdc

Vdc

nAdc
µAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1

ELECTRICAL CHARACTERISTICS

80

80

80

WMBT5401LT1

(TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –1.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –50 mAdc, VCE = –5.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)

Base–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz)

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Small Signal Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

Noise Figure

(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 10 Ω, f = 1.0 kHz)

h

FE

V

CE(sat)

V

BE(sat)

f

C

obo

h

NF

—

240

—

—
—

—
—

T

fe

100 300

— 6.0

40 200

— 8.0

–0.2
–0.5

–1.0
–1.0

—

Vdc

Vdc

MHz

pF

—

dB