Wing Shing WMBT3904 Datasheet

NPN EPITAXIAL SILICON TRANSISTORS WMBT3904

1. BASE

2. EMITTER

3. COLLECTOR

High Voltage Transistor

!

Power Dissipation: 225mW

!

Collector Current: Max. 0.2A

GUARANTEED PROBED CHARACTERISTICS (TA=25℃℃℃℃)

Characteristic Symbol Test Conditions

Collector-emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-off
Current

DC Current Gain

Base-Emitter
Saturation Voltage
Collector-Emitter
Saturation Voltage
Transition Frequency f
Collector-Base
Capacitance

NOTES:

Due to probe testing limitations, only the DC parameters are tested.

BV

CEO

BV

CBO IC

BV

EBO IE

I

CEX VCE

h

FE1

h

FE2

h

FE3

h

FE4

h

FE5

BV

ESAT1

BV

ESAT2

V

CE(SAT)1

V

CE(SAT)2

T

C

OB

IC=10, VCE=20V f=100MHz 300 MHz

IC=1mA 40 V

=100µA 60 V

=10µA 6.0 V

=30V, VBE=3V 50 nA

VCE=1V, IC=100µA 40
VCE=1V, IC=1mA 70
VCE=1V, IC=10mA 100 300
VCE=1V, IC=50mA 60
VCE=1V, IC=100mA 30
IC=10mA, IB=1mA 650 850 mV

IC=50mA,IB=5mA 950 mV
IC=10mA, IB=1mA 200 mV
IC=50mA, IB=5mA 200 mV

VCB=5V, f=1MHz 4 PF

SOT ——23

MIN. MAX.

Limits

Units

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]