Wing Shing TIP32C, TIP31C Datasheet

GENERAL DESCRIPTION

g

j

(BR)

TIP31C/TIP32C

Silicon Epitaxial Planar Transistor

Complementary, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose

QUICK REFERENCE DATA

TO-220

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

V
V
I
I
P
V
V
t

CBO

CEO
C
CM

tot

CEsat

F
f

Collector-emitter voltage peak value VBE = 0V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage IC = 3A; IB =0.4A
Diode for war d vol ta ge IF = 3A 1.5 2.0 V
Fall time I

= 3.0A; f = 16KHz 0.5 - s

Csat

-

-

-

-

-

-

100 V
100 V

3A
5A

40 W

1.2 V

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V
V
V
I
I
P
T
T

CESM
CEO

EBO
C
B

tot

st

Collector-emitter voltage peak value VBE = 0V - 100 V
Collector-emitter voltage (open base) - 100 V
Emitter-base oltage (open colloctor) 5 v
Collector current (DC) - 3 A
Base current (DC) - 1 A
Total power dissipation Tmb 25 -40W
Storage temperature -55 150
Junction temperature - 150

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

I

CBO

I

EBO

V

CEO

V

CEsat

h

FE

f

T

C

c

t

on

t

s

t

f

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

Collector-base cut-off current VCB=100V - 0.2 mA
Emitter-base cut-off current VEB=5V - 1.0 mA
Collector -emitt er breakdown vol tage IC=1mA 100 v
Collector-emitter saturation voltages IC = 3A; IB = 0.4A - 1.2 V
DC current gain IC = 1A; VCE = 5V 25
Transition frequency at f = 5MHz IC = 0.5A; VCE = 10V 3.0 - MHz
Collector capacitance at f = 1MHz VCB = 10V 85 - pF
On times IC=3A,IB1=-IB2=0.3A,VCC=30V 0.4 us
Tum-off storage time IC=3A,IB1=-IB2=0.3A,VCC=30V 1.0 us
Fall time IC=3A,IB1=-IB2=0.3A,VCC=30V 0.5 1.0 us