Wing Shing S8550LT1 Datasheet

HIGH VOLTAGE TRANSISTOR: (PNP)

S8550LT1

PNP EPITAXIAL SILICON TRANSISTORS

FEATURES

Die Size

0.44*0.44mm

Power dissipation

P

Collector current

I

Collector-base voltage

V

: 225mW（Tamb=25

CM

: 0.5A

CM

: 40V

(BR)CBO

℃）

SOT————23

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS（（（（Tamb=25℃℃℃℃ unless otherwise specified）

）

））

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain(note)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V(BR)

CBO

V(BR)

CEO

V(BR)

EBO

I

CBO

I

EBO

H

）

FE（1

H

）

FE（2

V

(sat) IC= 500mA, IB= 50 mA 500 mV

CE

V

(sat) IC= 500mA, IB= 50 mA 1.2 V

BE

V

BE(on)

Ic= 100µA , IE=0 30 V

Ic= 1 mA，IB=0

IE= 100µA，IC=0

21 V

5.0 V

VCB= 30V , IE=0 1.0 µA

VEB= 5V，IC=0

100 nA

VCE= 1V, IC= 150mA 120 400

VCE= 1V, IC= 500mA 40

IC= 10mA, VCE =1V 1.0 V

CLASSIFICATION OF H

Rank
Range

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Homepage: http://www.wingshing.com E-mail: [e-mail]

FE(1)

B9C B9D B9E

120-200 160-300 280-400