Wing Shing S8050LT1 Datasheet

S8050LT1

PLASTIC-ENCAPSULATE TRANSISTORS

S8050LT1 TRANSISTOR （ NPN ）

FEATURES

Power dissipation
P

: 0.3 W（Tamb=25℃）

CM

Collector current
I

: 0.5 A

CM

Collector-base voltage
V

(BR)CBO

: 40 V

SOT————23

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS（（（（Tamb=25℃℃℃℃ unless otherwise specified）

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain(note)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Symbol Test conditions MIN TYP MAX UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

H

FE(1)

H

FE(2)

V

(sat) IC=500 mA, IB= 50mA 0.6 V

CE

V

(sat) IC=500 mA, IB= 50mA 1.2 V

CE

V

BE

Ic= 100μA， IE=0

Ic= 0.1mA， IB=0

IE=100μA， IC=0

VCB=40 V , IE=0 0.1

VCB=20V , IE=0 0.1

VEB= 5V , IC=0 0.1

VCE=1V, IC= 50mA 120 350

VCE=1V, IC= 500mA 50

IE= 100mA 1.4

40 V

25 V

5 V

）

））

μ

μ

μ

A

A

A

Transition frequency

CLASSIFICATION OF H

Rank

Rank L H

RankRank

Range

Range 100-200 200-350

RangeRange

DEVICE MARKING : S8050LT1=J3Y

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FE(1)

f

T

VCE=6V, IC= 20mA

150 MHz

f=30MHz