Wing Shing S2005AF Datasheet
GENERAL DESCRIPTION
V
B
E
V
I
I
P
m
b
V
I
V
t
V
B
E
V
V
I
I
I
P
T
T
I
B
E
C
E
CESMmax
I
j
V
C
V
V
h
C
E
V
f
C
E
C
C
B
t
t
S2005AF
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in
a plastic envelope with integrated efficiency diode ,
primarily for use in horizontal deflection circuites of
colour television receivers
TO-3PM
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
= 0V 1500 V
Collector-emitter voltage (open base) 600 V
Collector current (DC) 8 A
Collector current peak value 15 A
Total power dissipation T
25 125 W
Collector-emitter saturation voltage IC = 4.5A; IB = 2.0A 1.5 V
Collector saturation current f = 16KHz A
Diode forward voltage IF=4.0A 2.0 V
Fall time IC=4.5A,IB1=-IB2=1.2A,VCC=140V 1.0 s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter voltage peak value V
Collector-emitter voltage (open base) 600 V
Emitter-base voltage(open collector) 5 V
Collector current (DC) 8 A
Base current (DC) 4 A
Base current peak value 6 A
Total power dissipation Tmb 25 125 W
Storage temperature -55 150
Junction temperature 150
= 0V 1500 V
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Collector-emitter cut-off current V
Collector-emitter sustaining voltage IB = 0A; I
Collector-emitter saturation voltages IC = 4.5A; IB = 2.0A 1.5 V
Base-emitter satuation voltage IC = 4.5A; IB = 2.0A 2.5 V
DC current gain IC = 1.0A; V
Diode forward voltage IF=4.5A 2.0 V
Transition frequency at f = 1MHz IC = 0.1A; V
Collector capacitance at f = 1MHz V
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time IC=4.5A,IB1=-IB2=1.2A,VCC=140V
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
= 0V; V
VBE = 0V; VCE = V
= 125
T
L = 25mH
= 10V pF
IC=4.5A,IB1=-IB2=1.2A,VCC=140V 7.0 s
= V
CESMmax
1.0 mA
2.0 mA
= 100mA V
= 5V 8 30
= 10V 3 MHz
1.0 s
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