Wing Shing MJE3055T Datasheet

GENERAL DESCRIPTION

V

-

V

-

I

-

I

-AP

-

V

-

V

t

V

V

V

I

I

P

T

T

I

C

B

I

V

V

B

h

C

E

f

C

C

B

t

t

t

MJE3055T/MJE2955T

SILICON EPITAXIAL
PLANAR TRANSISTOR

Complementary, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage IC = 4.0A; IB = 0.4A
Diode forward voltage IF = 4.0A 1.5 2.0 V
Fall time - s

TO-220

70 V
60 V
10 A

75 W

1.2 V

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V - 70 V
Collector-emitter voltage (open base) - 60 V
Emitter-base oltage (open colloctor) 5 v
Collector current (DC) - 10 A
Base current (DC) - 6 A
Total power dissipation Tmb 25 - 75 W
Storage temperature -55 150
Junction temperature - 150

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-base cut-off current V
Emitter-base cut-off current VEB=5V - 2.5 mA
Collector-emitter breakdown voltage IC=1mA 60 v
Collector-emitter saturation voltages IC = 4.0A; I
DC current gain IC = 4.0A; V
Transition frequency at f = 5MHz IC = 0.5A; VCE = 10V 5 - MHz
Collector capacitance at f = 1MHz V
On times us
Tum-off storage time us
Fall time us

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=70V - 1.0 mA

= 0.4A - 1.2 V

= 4V 20 100

= 10V 350 pF