Wing Shing MJE13005B Datasheet

CHARACTERISTIC SYMBOL RATING UNIT

NPN SILICON TRANSISTOR

ELECTRONIC TRANSFORMERS ,
POWER SWICHING CIRCUIT

ABSOLUTE MAXIMUM RATINGS ( T =25

A

)

C

o

ELECTRICAL CHARACTERISTICS (T =25 C

A

o

)

MJE13005B

Tamb=25 C

Tcase=25 C

o

o

1.5

75

W

10

-

10

1000

1000

40

5V, Ic=1A

1.0B=0.25A

1.2

V

Base-emitter Voltage

V

BE

I

=

E

V

1A

1.25

V(BR)CEO

___

0

IB1=-IB2=0.4A

Ic=2A

V
V

CBO

CEO
EBO

700
400

9
4

Ptot

Tj

Tstg -55~+150

150

SYMBOL TEST CONDITION MIN. MAX. UNIT

(BR)CBO

(BR) EBO

hFE V

Ic=1m A, IB=0

CBO VCB
CEO VCE
EBO VEB

V
V

V

A

=0 , I c=1m A

E

I
IE=1mA, IC=0

=700V, IE=0
=400V, IB=0

=9V, Ic=0

=

CE

C ollector-Base Voltage V
C ollector-Emi tter Voltage

Emitter -Base Vol tage
C ollector Current Ic

Collector Power Dissipation

Junc tion Temper a t ure
Storage Temperature Range

CHARACTERISTIC
Collector-Emitter Sustaining Voltage
C oll e ctor -Base Break dow n Voltage V
Emitter -Base Bre akdown Vol tage V
Collector Cut off current I
Collector-Emitter Cut off Current I
Emitter-Base Cut off Voltage I
DC Current Gain

Collector-Emitter Saturation Voltage VCE(sat) Ic=1A, IB=0.25A

400 -

700 -

9-

- 00

-

-

-

V

V
V

A
A
A

Base-Emitter Saturation Voltage
Fall Time t
Storage Time ts I
Fr eqency C har acteri stics f

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VBE(sat) Ic=

f

Ic=2A

B1

T

VCE=10V, IC=0.5A, f=1MHz 5 -

=- IB2=0.4A

.9

-4

S
S

MHz