Wing Shing MJE13003 Datasheet
MJE13003
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
FEATURES
Power dissipation
P
: 1.25 W
CM
TO 126
Tamb=25
Collector current
I
: 1.5 A
CM
Collector-base voltage
V
(BR)CBO
: 700 V
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
1.BASE
2.COLLECTOR
3.EMITTER
1 2 3
Tamb=25 unless otherwise specified
Symbol Test conditions MIN TYP MAX UNIT
V(BR)
V(BR)
V(BR)
I
CBO
I
CEO
CBO
CEO
EBO
Ic= 1000 A IE=0
Ic= 10 mA IB=0 400 V
IE= 1000 A IC=0
VCB= 700 V IE=0
VCE= 400 V IB=0 500 µA
700 V
9V
1000 µA
Emitter cut-off current
DC current gain(note)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
CLASSIFICATION OF H
FE(1)
Rank
Range
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
8-15 15-20 20-25 25-30 30-35 35-40
I
EBO
H
FE 1
H
FE 2
V
(sat) IC=1000mA,IB= 250 mA 1 V
CE
V
(sat) IC=1000mA, IB= 250mA 1.2 V
BE
V
BE
f
T
t
f
t
s
VEB= 9 V IC=0 1000 µA
VCE= 10 V, IC= 150 mA 8 40
VCE= 10 V, IC= 0.5 mA 5
IE= 2000 mA 3 V
VCE=10V,Ic=100mA
f =1MHz
IC=1A, IB1=-IB2=0.2A
V
=100V
CC
5MHz
0.5 µs
2.5 µs
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