Wing Shing MJE13002A Datasheet

SILICON NPN TRIPLE

MJE13002A

APPLICATION:

ELECTRONIC TRANSFORMERS ,
POWER SWICHING CIRCUIT

MAXIMUM RATINGS (Tc=25⊥)

CHARACTERISTIC SYMBOL RATING UNIT

V
V

CBO

CEO
EBO

600
400

9
1

Pc

T(vj)

Tstg -55~ + 150

20

150

Collector-Bas e Voltage V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Ic
Collector Power Dissipation
Junction Temperature
Storage Temperature Range

DIFFUSED MESA TYPE

V
V
V

A

W

℃

TO-126

℃

ELECTRICAL CHARACTERISTICS (Tc=25⊥)

CHARACTERISTIC
Collector-Emitter Sustaining Voltage V
Collector-Base Breakd own Voltage V
Emitter-Base Breakdown Voltage V
Collector-Base Cut off current I
Colle ctor-Emitt er Cu t o ff Current I
Emitter-Ba se Cut off Cu rren t I
Small-signal Current Gain
Collecto r-Emitter Saturation Voltage VCE(sat) Ic=0.5A , IB=0.1A
Base-Emitter Saturation Voltage
Fall T ime t
Sto rag e T ime ts I
Freqen cy Characteristics f

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SYMBOL TEST CONDITION MIN. MAX. UNIT

(sus )

CEO

(BR)CBO

(BR) E BO

CBO
CEO
EBO

Ic=10m A , IB=0

=0 , Ic=1m A

E

I

IE=1mA , IC=0
VCB=600V IE=0
VCE=400V IB=0

VEB=7V Ic=0

hFE VCE=10V,Ic=0.1A, 10 40 -

VBE(sat) Ic=0.5A, IB=0.1A - 1.1

f

T

CE

=10V, IC=0.1A, f=1MHz

V

Ic= 1 A

B1

=-1 IB2=0.2A

400 ­600 -

9-

-100μ

-50μ

-10μ

-1.2

-0.7μ

-3μ
4-

V
V
V

A
A
A

V
V

S
S

MHz