Wing Shing MJ15015 Datasheet

GENERAL DESCRIPTION

g

j

(BR)

MJ15015

Silicon Epitaxial Planar Transistor

Silicon NPN high frequency, high power transistors
in a metal envelope, primarily for use in audio and
general purpose

TO-3

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

V
V
I
I
P
V
V
t

CESM

CEO
C
CM

tot

CEsat

F
f

Collector-emitter voltage peak value VBE = 0V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage IC = 4.0A; IB = 0.4A
Diode for war d vol ta ge IF = 4.0A 1.5 2.0 V
Fall time IC=4A,IB1=-IB2=0.4A,VCC=30V 6.0 s

-

-

-

-

-

-

200 V
120 V

15 A

180 W

1.5 V

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V
V
V
I
I
P
T
T

CESM
CEO

EBO
C
B

tot

st

Collector-emitter voltage peak value VBE = 0V - 200 V
Collector-emitter voltage (open base) - 120 V
Emitter-base oltage (open colloctor) 5 V
Collector current (DC) - 15 A
Base current (DC) - 7 A
Total power dissipation Tmb 25 -180W
Storage temperature -55 150
Junction temperature - 150

A

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

I

CBO

I

EBO

V

CEO

V

CEsat

h

FE

f

T

C

c

t

on

t

s

t

f

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

Collector-base cut-off current VBE = 0V; VCE = V
Emitter-base cut-off current VBE = 0V; VCE = V
Collector-emitter breakdown voltage Tj = 125 120 V
Collector-emitter saturation voltages IC = 4.5A; IB = 1.6A - 1.5 V
DC current gain IC = 100mA; VCE = 5V 30 150
Transition frequency at f = 5MHz IC = 0.1A; VCE = 5V 3 - MHz
Collector capacitance at f = 1MHz VCB = 10V 600- pF
On times IC=4A,IB1=-IB2=0.4A,VCC=30V 4.5 us
Tum-off storage time IC=4A,IB1=-IB2=0.4A,VCC=30V 3.0 us
Fall time IC=4A,IB1=-IB2=0.4A,VCC=30V 6.0 us

CESMmax

CESMmax

-0.2mA

-0.2mA