Wing Shing MJ10023 Datasheet

GENERAL DESCRIPTION
g
j
MJ10023
Silicon NPN Power Darlington Transistor
Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications.
TO-3
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
V V I I P V I V t
CEO C CM
tot
CEsat csat
F f
Collector-emitter voltage peak value VBE = 0V Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Tmb25 Collector-emitter saturation voltage IC = 20A; IB = 1.2A
-
-
-
-
-
-
Collector saturation current f = 16KHz - A Diode for war d vol ta ge IF = 20A 5 V Fall time IC=20A,IB1=1.2A,VCC=250V 1.0 s
600 V 400 V
40 A 80 A
250 W
6.0 V
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V V I I I I P T T
CEO C CM B BM
tot
st
Collector-emitter voltage peak value VBE = 0V - 600 V Collector-emitter voltage (open base) - 400 V Collector current (DC) - 40 A Collector current peak value - 80 A Base current (DC) - 20 A Base current peak value - 40 A Total power dissipation Tmb 25 -250W Storage temperature -55 150 Junction temperature - 150
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
I
CE
I
CES
V
CEOsust
V
CEsat
V
BEsat
h
FE
V
F
f
T
C
c
t
s
t
f
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
Collector cut-off current VBE = 0V; VCE = V
VBE = 0V; VCE = V
= 125
T
j
Collector-emitter sustaining voltage IB = 0A; IC = 100mA - V
L = 25mH Collector-emitter saturation voltages IC = 20A; IB = 1.2A - 6 V Base-emitter satuation voltage IC = 20A; IB = 1.2A - 3.5 V DC current gain IC = 10A; VCE = 5V 300 Diode for war d vol ta ge IF = 20A 2.5 5.0 V Transition frequency at f = 5MHz - MHz Collector capacitance at f = 1MHz VCB = 10V 600 pF
Switching times(16KHz line deflecton circuit) Turn-off stor age ti me Turn-off fall time IC=20A,IB1=1.2A,VCC=250V
IC=20A,IB1=1.2A,VCC=250V 1.0 3.0 s
CEmax
CEmax
-2.0mA
-5.0mA
0.3 1.0 s
Loading...