Wing Shing 2SA1104 User Manual

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查询2SA1104供应商

GENERAL DESCRIPTION

Silicon PNP high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose

QUICK REFERENCE DATA

MT-100

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

Collector-emitter voltage peak value VBE = 0V
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation Tmb25
Collector-emitter saturation voltage IC = 3.5A; IB = 0.35A
Diode forward voltage IF = 3.5A 1.5 2.0 V
Fall time - s

120 V
120 V

8 A

80 W

2 V

LIMITING VALUES

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

Collector-emitter voltage peak value VBE = 0V - 120 V
Collector-emitter voltage (open base) - 120 V
Emitter-base oltage (open colloctor) 5 V
Collector current (DC) - 8 A
Base current (DC) - 2 A
Total power dissipation Tmb 25 - 80 W
Storage temperature -55 150
Junction temperature - 150

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

Collector-base cut-off current V
Emitter-base cut-off current VEB=5V - 0.2 mA
Collector-emitter breakdown voltage IC=1mA 120 V
Collector-emitter saturation voltages IC = 3.5A; I
DC current gain IC = 3A; V
Transition frequency at f = 5MHz IC = 1A; VCE = 12V 20 - MHz
Collector capacitance at f = 1MHz V
On times us
Tum-off storage time us
Fall time us

Wing Shing Computer Components Co., (H.K.)Ltd. Tel:[phone] Fax:[phone]
Homepage: http://www.wingshing.com E-mail: [e-mail]

=100V - 0.2 mA

= 0.35A - 2 V

= 5V 50 250

= 10V 300 - pF