W24258/LL
32K × 8 CMOS STATIC RAM
GENERAL DESCRIPTION
The W24258/LL is a normal speed, very low power CMOS static RAM organized as 32768 × 8 bits
that operates on a single 5-volt power supply. This device is manufactured using Winbond's high
performance CMOS technology.
FEATURES
• Low power consumption:
− Active: 350 mW (max.)
− Standby: 25 µW (max.)
• Access time: 55/70 nS (max.)
• Single 5V power supply
• Fully static operation
• All inputs and outputs directly TTL compatible
• Three-state outputs
• Battery back-up operation capability
• Data retention voltage: 2V (min.)
• Packaged in 28-pin 600 mil DIP, 330 mil SOP
and standard type one TSOP (8 mm × 13.4
mm)
PIN CONFIGURATIONS
1
A14
A12
2
A7
3
A6
4
A5
5
A4
6
28-pin
7
DIP
8
9
10
11
12
13
14
28-pin
TSOP
A11
A13
V
A14
A12
WE
A3
A2
A1
A0
I/O1
I/O2
I/O3
V
SS
1
OE
2
3
A9
4
A8
5
6
7
DD
8
9
10
A7
11
A6
12
A5
13
A4
14
A3
BLOCK DIAGRAM
CLK GEN.
A12
A14
A2
WE
CS
OE
A3
A4
A5
A6
A7
A13
I/O1
I/O8
DATA
CNTRL.
CLK
GEN.
28
V
DD
27
WE
26
A13
25
A8
24
A9
23
A11
22
OE
21
A10
20
CS
19
I/O8
18
I/O7
17
I/O6
16
I/O5
15
I/O4
PRECHARGE CKT.
R
O
W
CORE CELL ARRAY
D
E
C
64 X 8 COLUMNS
O
D
E
COLUMN DECODER
A11
512 ROWS
I/O CKT.
A10 A1 A0A8A9
PIN DESCRIPTION
A10
28
CS
27
I/O8
26
I/O7
25
I/O6
24
I/O5
23
I/O4
22
V
21
SS
I/O3
20
I/O2
19
I/O1
18
A0
17
A1
16
A2
15
SYMBOL DESCRIPTION
A0−A14
I/O1−I/O8
Address Inputs
Data Inputs/Outputs
Chip Select Input
Write Enable Input
Output Enable Input
VDD Power Supply
VSS Ground
Publication Release Date: November 1998
- 1 - Revision A5
TRUTH TABLE
W24258/LL
MODE
H X X Not Selected High Z ISB, ISB1
L H H Output Disable High Z IDD
L L H Read Data Out IDD
L X L Write Data In IDD
I/O1−I/O8
VDD CURRENT
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER RATING UNIT
Supply Voltage to VSS Potential -0.5 to +7.0 V
Input/Output to VSS Potential -0.5 to VDD +0.5 V
Allowable Power Dissipation 1.0 W
Storage Temperature -65 to +150
Operating Temperature 0 to 70
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
°C
°C
Operating Characteristics
(VDD = 5V ±10%; VSS = 0V; TA = 0° C to 70° C)
PARAMETER SYM. TEST CONDITIONS MIN. TYP.* MAX. UNIT
Input Low Voltage VIL - -0.5 - +0.8 V
Input High Voltage VIH - +2.2 - VDD +0.5 V
Input Leakage Current ILI VIN = VSS to VDD -1 - +1
Output Leakage Current ILO
Output Low Voltage VOL IOL = +2.1 mA - - 0.4 V
Output High Voltage VOH IOH = -1.0 mA 2.4 - - V
Operating Power IDD
Supply Current
Standby Power Supply
Current
Note : Typical parameter is measured under ambient temperature TA = 25° C and VDD = 5V.
ISB
ISB1
VI/O = VSS to VDD, CS = VIH
(min.) or OE = VIH (min.) or
= VIL (max.)
= VIL (max.), I/O = 0
I/O = 0 mA, Cycle =
min.
Duty =100%
= VIH (min.), Cycle = min.
Duty = 100%
≥ VDD -0.2V
- 2 -
55 - - 70 mA
70 - - 60 mA
-1 - +1
- - 3 mA
- 0.7 5
µA
µA
µA
W24258/LL
CAPACITANCE
(VDD = 5V, TA = 25° C, f = 1 MHz)
PARAMETER SYM. CONDITIONS MAX. UNIT
Input Capacitance CIN VIN = 0V 6 pF
Input/Output Capacitance CI/O VOUT = 0V 8 pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER CONDITIONS
Input Pulse Levels 0V to 3.0V
Input Rise and Fall Times 5 nS
Input and Output Timing Reference Level 1.5V
Output Load See the drawing below
AC TEST LOADS AND WAVEFORM
1 TTL
OUTPUT
100 pF
Including
Jig and
Scope
3.0V
0V
OUTPUT
5 pF
Including
Jig and
Scope
(For T T T T T T )
CLZ, OLZ, CHZ, OHZ, WHZ, OW
90%
10%
5 nS
90%
10%
5 nS
1 TTL
Publication Release Date: November 1998
- 3 - Revision A5