Winbond W25Q16BV User Manual
16M-BIT
SERIAL FLASH MEMORY WITH
DUAL AND QUAD SPI
W25Q16BV
Publication Release Date: July 08, 2010
- 1 - Revision F
W25Q16BV
Table of Contents
1. GENERAL DESCRIPTION ............................................................................................................... 5
2. FEATURES....................................................................................................................................... 5
3. PIN CONFIGURATION SOIC 150 / 208-MIL ...................................................................................6
4. PAD CONFIGURATION WSON 6X5-MM ........................................................................................ 6
5. PAD CONFIGURATION PDIP 300-MIL ...........................................................................................7
6. PIN DESCRIPTION SOIC 150/208-MIL, PDIP 300-MIL AND WSON 6X5-MM............................... 7
7. PIN CONFIGURATION SOIC 300-MIL ............................................................................................8
8. PIN DESCRIPTION SOIC 300-MIL .................................................................................................. 8
8.1 Package Types..................................................................................................................... 9
8.2 Chip Select (/CS)..................................................................................................................9
8.3 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3) ....................................9
8.4 Write Protect (/WP)............................................................................................................... 9
8.5 HOLD (/HOLD) ..................................................................................................................... 9
8.6 Serial Clock (CLK)................................................................................................................9
9. BLOCK DIAGRAM..........................................................................................................................10
10. FUNCTIONAL DESCRIPTION ....................................................................................................... 11
10.1 SPI OPERATIONS ............................................................................................................. 11
10.1.1 Standard SPI Instructions...................................................................................................11
10.1.2 Dual SPI Instructions ..........................................................................................................11
10.1.3 Quad SPI Instructions.........................................................................................................11
10.1.4 Hold Function .....................................................................................................................11
10.2 WRITE PROTECTION .......................................................................................................12
10.2.1 Write Protect Features........................................................................................................12
11. CONTROL AND STATUS REGISTERS ........................................................................................13
11.1 STATUS REGISTER .......................................................................................................... 13
11.1.1 BUSY..................................................................................................................................13
11.1.2 Write Enable Latch (WEL) ..................................................................................................13
11.1.3 Block Protect Bits (BP2, BP1, BP0)....................................................................................13
11.1.4 Top/Bottom Block Protect (TB)...........................................................................................13
11.1.5 Sector/Block Protect (SEC) ................................................................................................13
11.1.6 Status Register Protect (SRP1, SRP0)...............................................................................14
11.1.7 Erase Suspend Status (SUS) .............................................................................................14
11.1.8 Quad Enable (QE) ..............................................................................................................14
11.1.9 Status Register Memory Protection ....................................................................................16
11.2 INSTRUCTIONS................................................................................................................. 17
11.2.1 Manufacturer and Device Identification ..............................................................................17
- 2 -
W25Q16BV
11.2.2 Instruction Set Table 1 (Erase, Program Instructions) ........................................................18
11.2.3 Instruction Set Table 2 (Read Instructions) ........................................................................19
11.2.4 Instruction Set Table 3 (ID, Security Instructions)...............................................................20
11.2.5 Write Enable (06h)..............................................................................................................21
11.2.6 Write Disable (04h).............................................................................................................21
11.2.7 Read Status Register-1 (05h) and Read Status Register-2 (35h).......................................22
11.2.8 Write Status Register (01h) ................................................................................................23
11.2.9 Read Data (03h) .................................................................................................................24
11.2.10 Fast Read (0Bh) ...............................................................................................................25
11.2.11 Fast Read Dual Output (3Bh) ...........................................................................................26
11.2.12 Fast Read Quad Output (6Bh)..........................................................................................27
11.2.13 Fast Read Dual I/O (BBh).................................................................................................28
11.2.14 Fast Read Quad I/O (EBh) ...............................................................................................30
11.2.15 Word Read Quad I/O (E7h) ..............................................................................................32
11.2.16 Octal Word Read Quad I/O (E3h).....................................................................................34
11.2.17 Page Program (02h) .........................................................................................................36
11.2.18 Quad Input Page Program (32h) ......................................................................................37
11.2.19 Sector Erase (20h) ...........................................................................................................38
11.2.20 32KB Block Erase (52h) ...................................................................................................39
11.2.21 64KB Block Erase (D8h)...................................................................................................40
11.2.22 Chip Erase (C7h / 60h).....................................................................................................41
11.2.23 Erase Suspend (75h)........................................................................................................42
11.2.24 Erase Resume (7Ah) ........................................................................................................43
11.2.25 Power-down (B9h)............................................................................................................44
11.2.26 Release Power-down / Device ID (ABh)...........................................................................45
11.2.27 Read Manufacturer / Device ID (90h) ...............................................................................47
11.2.28 Read Manufacturer / Device ID Dual I/O (92h).................................................................48
11.2.29 Read Manufacturer / Device ID Quad I/O (94h)................................................................49
11.2.30 Read Unique ID Number (4Bh).........................................................................................50
11.2.31 Read JEDEC ID (9Fh) ......................................................................................................51
11.2.32 Continuous Read Mode Reset (FFh or FFFFh)................................................................52
12. ELECTRICAL CHARACTERISTICS ..............................................................................................53
12.1 Absolute Maximum Ratings................................................................................................ 53
12.2 Operating Ranges ..............................................................................................................53
12.3 Power-up Timing and Write Inhibit Threshold .................................................................... 54
12.4 DC Electrical Characteristics.............................................................................................. 55
12.5 AC Measurement Conditions .............................................................................................56
12.6 AC Electrical Characteristics .............................................................................................. 57
12.7 AC Electrical Characteristics (cont’d).................................................................................58
Publication Release Date: July 08, 2010
- 3 - Revision F
W25Q16BV
12.8
Serial Output Timing........................................................................................................... 59
12.9
Serial Input Timing.............................................................................................................. 59
12.10 Hold Timing ....................................................................................................................... 59
13. PACKAGE SPECIFICATION..........................................................................................................60
13.1 8-Pin SOIC 150-mil (Package Code SN) ...........................................................................60
13.2 8-Pin SOIC 208-mil (Package Code SS) ...........................................................................61
13.3 8-Pin PDIP 300-mil (Package Code DA)............................................................................ 62
13.4 8-Contact 6x5mm WSON (Package Code ZP) .................................................................. 63
13.5 16-Pin SOIC 300-mil (Package Code SF).......................................................................... 65
14. ORDERING INFORMATION .......................................................................................................... 66
14.1 Valid Part Numbers and Top Side Marking........................................................................67
15. REVISION HISTORY...................................................................................................................... 68
- 4 -
W25Q16BV
1. GENERAL DESCRIPTION
The W25Q16BV (16M-bit) Serial Flash memory provides a storage solution for systems with limited
space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial
Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI
(XIP) and storing voice, text and data. The devices operate on a single 2.7V to 3.6V power supply with
current consumption as low as 4mA active and 1µA for power-down. All devices are offered in spacesaving packages.
The W25Q16BV array is organized into 8,192 programmable pages of 256-bytes each. Up to 256 bytes
can be programmed at a time. Pages can be erased in groups of 16 (sector erase), groups of 128 (32KB
block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q16BV has 512
erasable sectors and 32 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in
applications that require data and parameter storage. (See figure 2.)
The W25Q16BV supports the standard Serial Peripheral Interface (SPI), and a high performance
Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1
(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing
equivalent clock rates of 208MHz for Dual Output and 416MHz for Quad Output when using the Fast
Read Dual/Quad Output instructions. These transfer rates can outperform standard Asynchronous 8 and
16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient memory access with as
few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true XIP (execute in place)
operation.
A Hold pin, Write Protect pin and programmable write protection, with top or bottom array control,
provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and
device identification with a 64-bit Unique Serial Number.
2. FEATURES
• Family of SpiFlash Memories
– W25Q16BV: 16M-bit / 2M-byte (2,097,152)
– 256-bytes per programmable page
• Standard, Dual or Quad SPI
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
• Highest Performance Serial Flash
– Up to 8X that of ordinary Serial Flash
– 104MHz clock operation
– 208MHz equivalent Dual SPI
– 416MHz equivalent Quad SPI
– 50MB/S continuous data transfer rate
• Efficient “Continuous Read Mode”
– Low Instruction overhead
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
– Outperforms X16 Parallel Flash
Notes 1. Refer to Ordering Information.
2. These package types are Special Order Only, please contact Winbond for more information.
• Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 4mA active current, <1µA Power-down (typ.)
– -40°C to +85°C operating range
• Flexible Architecture with 4KB sectors
– Uniform Sector Erase (4K-bytes)
– Block Erase (32K and 64K-bytes)
– Program one to 256 bytes
– More than 100,000 erase/write cycles
– More than 20-year data retention
• Advanced Security Features
– Software and Hardware Write-Protect
– Top or Bottom, Sector or Block selection
– Lock-Down and OTP protection
(1)
– 64-Bit Unique ID for each device
• Space Efficient Packaging
– 8-pin SOIC 150
– 8-pad WSON 6x5-mm
– 8-pin PDIP 300-mil
– 16-pin SOIC 300-mil
(2)
/208-mil
(2)
(2)
– Contact Winbond for KGD and other options
Publication Release Date: July 08, 2010
- 5 - Revision F
3. PIN CONFIGURATION SOIC 150 / 208-MIL
W25Q16BV
/CS
/CS
)
GND
GND
)
1
1
)
)
2
2
DO (IO
DO (IO
/WP (IO
/WP (IO
Figure 1a. W25Q16BV Pin Assignments, 8-pin SOIC 150 / 208-mil (Package Code SN & SS)
1
1
2
2
3
3
4
4
4. PAD CONFIGURATION WSON 6X5-MM
/CS
/CS
DO (IO
DO (IO
/WP (IO
/WP (IO
)
)
1
1
)
)
2
2
1
1
2
2
3
3
VCC
8
8
7
7
6
6
5
5
VCC
/HOLD (IO
/HOLD (IO
CLK
CLK
)
DI (IO
DI (IO
)
0
0
)
)
3
3
8
8
7
7
6
6
VCC
VCC
/HOLD (IO
/HOLD (IO
CLK
CLK
)
)
3
3
GND
GND
4
4
5
5
DI (IO
DI (IO
)
)
0
0
Figure 1b. W25Q16BV Pad Assignments, 8-pad WSON 6x5-mm(Package Code ZP)
- 6 -
5. PAD CONFIGURATION PDIP 300-MIL
W25Q16BV
/CS
/CS
DO (IO
DO (IO
/WP (IO
/WP (IO
GND
GND
)
)
1
1
)
)
2
2
1
1
2
2
3
3
4
4
8
8
7
7
6
6
5
5
VCC
VCC
/HOLD (IO
/HOLD (IO
CLK
CLK
)
DI (IO
DI (IO
)
0
0
)
)
3
3
Figure 1c. W25Q16BV Pin Assignments, 8-pin PDIP (Package Code DA)
6. PIN DESCRIPTION SOIC 150/208-MIL, PDIP 300-MIL AND WSON 6X5-MM
PIN NO. PIN NAME I/O FUNCTION
1 /CS I Chip Select Input
2 DO (IO1) I/O Data Output (Data Input Output 1)*1
3 /WP (IO2) I/O Write Protect Input ( Data Input Output 2)*
4 GND Ground
5 DI (IO0) I/O Data Input (Data Input Output 0)*1
6 CLK I Serial Clock Input
7 /HOLD (IO3) I/O Hold Input (Data Input Output 3)*
8 VCC Power Supply
2
2
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
- 7 - Revision F
Publication Release Date: July 08, 2010
7. PIN CONFIGURATION SOIC 300-MIL
1/HOLD (IO3)
1/HOLD (IO3)
16
16
CLK
CLK
W25Q16BV
VCC
VCC
N/C
N/C
N/C
N/C
N/C
N/C
N/C
N/C
/CS
/CS
DO (IO )
DO (IO )
1 2
1 2
Figure 1d. W25Q16BV Pin Assignments, 16-pin SOIC 300-mil (Package Code SF)
2
2
3
3
4
4
5
5
6
6
7
7
8
8
15
15
14
14
13
13
12
12
11
11
10
10
DI (IO
DI (IO
N/C
N/C
N/C
N/C
N/C
N/C
N/C
N/C
GND
GND
/WP (IO )
9
9
/WP (IO )
8. PIN DESCRIPTION SOIC 300-MIL
PAD NO. PAD NAME I/O FUNCTION
1 /HOLD (IO3) I/O Hold Input (Data Input Output 3)*
2 VCC Power Supply
3 N/C No Connect
4 N/C No Connect
5 N/C No Connect
6 N/C No Connect
7 /CS I Chip Select Input
8 DO (IO1) I/O Data Output (Data Input Output 1)*1
9 /WP (IO2) I/O Write Protect Input (Data Input Output 2)*
10 GND Ground
11 N/C No Connect
12 N/C No Connect
13 N/C No Connect
14 N/C No Connect
15 DI (IO0) I/O Data Input (Data Input Output 0)*1
16 CLK I Serial Clock Input
)
)
0
0
2
2
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
- 8 -
W25Q16BV
8.1 Package Types
W25Q16BV is offered in an 8-pin plastic 150-mil or 208-mil width SOIC (package code SN & SS) and
6x5-mm WSON (package code ZP) as shown in figure 1a, and 1b, respectively. The 300-mil 8-pin PDIP
is another option of package selections (Figure 1c). The W25Q16BV is also offered in a 16-pin plastic
300-mil width SOIC (package code SF) as shown in figure 1d. Package diagrams and dimensions are
illustrated at the end of this datasheet.
8.2 Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is
deselected and the Serial Data Output (DO, or IO0, IO1, IO2, IO3) pins are at high impedance. When
deselected, the devices power consumption will be at standby levels unless an internal erase, program or
status register cycle is in progress. When /CS is brought low the device will be selected, power
consumption will increase to active levels and instructions can be written to and data read from the
device. After power-up, /CS must transition from high to low before a new instruction will be accepted.
The /CS input must track the VCC supply level at power-up (see “Write Protection” and figure 32). If
needed a pull-up resister on /CS can be used to accomplish this.
8.3 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)
The W25Q16BV supports standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions use
the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising
edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to read
data or status from the device on the falling edge CLK.
Dual and Quad SPI instruction use the bidirectional IO pins to serially write instructions, addresses or
data to the device on the rising edge of CLK and read data or status from the device on the falling edge of
CLK. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set.
When QE=1 the /WP pin becomes IO2 and /HOLD pin becomes IO3.
8.4 Write Protect (/WP)
The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (SEC, TB, BP2, BP1 and BP0) bits and Status
Register Protect (SRP) bits, a portion or the entire memory array can be hardware protected. The /WP
pin is active low. When the QE bit of Status Register-2 is set for Quad I/O, the /WP pin (Hardware Write
Protect) function is not available since this pin is used for IO2. See figure 1a, 1b, 1c, and 1d for the pin
configuration of Quad I/O operation.
8.5 HOLD (/HOLD)
The /HOLD pin allows the device to be paused while it is actively selected. When /HOLD is brought low,
while /CS is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored
(don’t care). When /HOLD is brought high, device operation can resume. The /HOLD function can be
useful when multiple devices are sharing the same SPI signals. The /HOLD pin is active low. When the
QE bit of Status Register-2 is set for Quad I/O, the /HOLD pin function is not available since this pin is
used for IO3. See figure 1a-d for the pin configuration of Quad I/O operation.
8.6 Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See SPI
Operations")
Publication Release Date: July 08, 2010
- 9 - Revision F
9. BLOCK DIAGRAM
Block Segmentation
Block Segmentation
xxFF00h xxFFFFh
xxFF00h xxFFFFh
• Sector 15 (4KB) •
• Sector 15 (4KB) •
xxF000h xxF0FFh
xxF000h xxF0FFh
xxEF00h xxEFFFh
xxEF00h xxEFFFh
• Sector 14 (4KB) •
• Sector 14 (4KB) •
xxE000h xxE0FFh
xxE000h xxE0FFh
xxDF00h xxDFFFh
xxDF00h xxDFFFh
• Sector 13 (4KB) •
• Sector 13 (4KB) •
xxD000h xxD0FFh
xxD000h xxD0FFh
xx2F00h xx2FFFh
xx2F00h xx2FFFh
• Sector 2 (4KB) •
• Sector 2 (4KB) •
xx2000h xx20FFh
xx2000h xx20FFh
xx1F00h xx1FFFh
xx1F00h xx1FFFh
• Sector 1 (4KB) •
• Sector 1 (4KB) •
xx1000h xx10FFh
xx1000h xx10FFh
xx0F00h xx0FFFh
xx0F00h xx0FFFh
• Sector 0 (4KB) •
• Sector 0 (4KB) •
xx0000h xx00FFh
xx0000h xx00FFh
Write Control
/WP (IO
/WP (IO
/HOLD (IO
/HOLD (IO
CLK
CLK
DI (IO0)
DI (IO0)
)
)
2
2
/CS
/CS
)
)
3
3
Write Control
Logic
Logic
Status
Status
Register
Register
SPI
SPI
Command &
Command &
Control Logic
Control Logic
W25Q16BV
1FFF00h 1FFFFFh
1FFF00h 1FFFFFh
• Block 31 (64KB) •
• Block 31 (64KB) •
1F0000h 1F00FFh
1F0000h 1F00FFh
•
•
•
•
•
•
•
•
•
10FF00h 10FFFFh
10FF00h 10FFFFh
• Block 16 (64KB) •
• Block 16 (64KB) •
100000h 1000FFh
100000h 1000FFh
0FFF00h 0FFFFFh
0FFF00h 0FFFFFh
• Block 15 (64KB) •
• Block 15 (64KB) •
0F0000h 0F00FFh
0F0000h 0F00FFh
Write Protect Logic and Row Decode
Write Protect Logic and Row Decode
08FF00h 08FFFFh
08FF00h 08FFFFh
• Block 8 (64KB) •
• Block 8 (64KB) •
080000h 0800FFh
080000h 0800FFh
07FF00h 07FFFFh
07FF00h 07FFFFh
• Block 7 (64KB) •
• Block 7 (64KB) •
070000h 0700FFh
070000h 0700FFh
High Voltage
High Voltage
Generators
Generators
Page Address
Page Address
Latch / Counter
Latch / Counter
Data
Data
00FF00h 00FFFFh
00FF00h 00FFFFh
• Block 0 (64KB) •
• Block 0 (64KB) •
000000h 0000FFh
000000h 0000FFh
Beginning
Beginning
Page Address
Page Address
And 256-Byte Page Buffer
And 256-Byte Page Buffer
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Column Decode
Column Decode
Ending
Ending
Page Address
Page Address
W25Q16BV
W25Q16BV
DO (IO1)
DO (IO1)
Byte Address
Byte Address
Latch / Counter
Latch / Counter
Figure 2. W25Q16BV Serial Flash Memory Block Diagram
- 10 -
W25Q16BV
10. FUNCTIONAL DESCRIPTION
10.1 SPI OPERATIONS
10.1.1 Standard SPI Instructions
The W25Q16BV is accessed through an SPI compatible bus consisting of four signals: Serial Clock
(CLK), Chip Select (/CS), Serial Data Input (DI) and Serial Data Output (DO). Standard SPI instructions
use the DI input pin to serially write instructions, addresses or data to the device on the rising edge of
CLK. The DO output pin is used to read data or status from the device on the falling edge CLK.
SPI bus operation Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and
Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in standby and data is
not being transferred to the Serial Flash. For Mode 0 the CLK signal is normally low on the falling and
rising edges of /CS. For Mode 3 the CLK signal is normally high on the falling and rising edges of /CS.
10.1.2 Dual SPI Instructions
The W25Q16BV supports Dual SPI operation when using the “Fast Read Dual Output and Dual I/O” (3B
and BB hex) instructions. These instructions allow data to be transferred to or from the device at two to
three times the rate of ordinary Serial Flash devices. The Dual Read instructions are ideal for quickly
downloading code to RAM upon power-up (code-shadowing) or for executing non-speed-critical code
directly from the SPI bus (XIP). When using Dual SPI instructions the DI and DO pins become
bidirectional I/O pins: IO0 and IO1.
10.1.3 Quad SPI Instructions
The W25Q16BV supports Quad SPI operation when using the “Fast Read Quad Output”, “Fast Read
Quad I/O”, “Word Read Quad I/O” and “Octal Word Quad I/O” (6B, EB, E7 and E3 hex respectively).
These instructions allow data to be transferred to or from the device four to six times the rate of ordinary
Serial Flash. The Quad Read instructions offer a significant improvement in continuous and random
access transfer rates allowing fast code-shadowing to RAM or execution directly from the SPI bus (XIP).
When using Quad SPI instructions the DI and DO pins become bidirectional IO0 and IO1, and the /WP
and /HOLD pins become IO2 and IO3 respectively. Quad SPI instructions require the non-volatile Quad
Enable bit (QE) in Status Register-2 to be set.
10.1.4 Hold Function
The /HOLD signal allows the W25Q16BV operation to be paused while it is actively selected (when /CS is
low). The /HOLD function may be useful in cases where the SPI data and clock signals are shared with
other devices. For example, consider if the page buffer was only partially written when a priority interrupt
requires use of the SPI bus. In this case the /HOLD function can save the state of the instruction and the
data in the buffer so programming can resume where it left off once the bus is available again. The
/HOLD function is only available for standard SPI and Dual SPI operation, not during Quad SPI.
To initiate a /HOLD condition, the device must be selected with /CS low. A /HOLD condition will activate
on the falling edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the
/HOLD condition will activate after the next falling edge of CLK. The /HOLD condition will terminate on the
rising edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the /HOLD
condition will terminate after the next falling edge of CLK. During a /HOLD condition, the Serial Data
Output (DO) is high impedance, and Serial Data Input (DI) and Serial Clock (CLK) are ignored. The Chip
Select (/CS) signal should be kept active (low) for the full duration of the /HOLD operation to avoid
resetting the internal logic state of the device.
Publication Release Date: July 08, 2010
- 11 - Revision F
W25Q16BV
10.2 WRITE PROTECTION
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern the W25Q16BV
provides several means to protect data from inadvertent writes.
10.2.1 Write Protect Features
• Device resets when VCC is below threshold
• Time delay write disable after Power-up
• Write enable/disable instructions and automatic write disable after program and erase
• Software and Hardware (/WP pin) write protection using Status Register
• Write Protection using Power-down instruction
(1)
• Lock Down write protection until next power-up
• One Time Program (OTP) write protection
(1)
Note 1: These features are available upon special order. Please refer to Ordering Information.
Upon power-up or at power-down, the W25Q16BV will maintain a reset condition while VCC is below the
threshold value of V
WI, (See Power-up Timing and Voltage Levels and Figure 32). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage
exceeds V
WI, all program and erase related instructions are further disabled for a time delay of tPUW. This
includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until
the VCC-min level and t
VSL time delay is reached. If needed a pull-up resister on /CS can be used to
accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector
Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a program,
erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-disabled state
of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting
the Status Register Protect (SRP0, SRP1) and Block Protect (SEC,TB, BP2, BP1 and BP0) bits. These
settings allow a portion or all of the memory to be configured as read only. Used in conjunction with the
Write Protect (/WP) pin, changes to the Status Register can be enabled or disabled under hardware
control. See Status Register for further information. Additionally, the Power-down instruction offers an
extra level of write protection as all instructions are ignored except for the Release Power-down
instruction.
- 12 -
W25Q16BV
11. CONTROL AND STATUS REGISTERS
The Read Status Register-1 and Status Register-2 instructions can be used to provide status on the
availability of the Flash memory array, if the device is write enabled or disabled, the state of write
protection, the Quad SPI setting and Erase Suspend status. The Write Status Register instruction can be
used to configure the devices write protection features and Quad SPI setting. Write access to the Status
Register is controlled by the state of the non-volatile Status Register Protect bits (SRP0, SRP1), the Write
Enable instruction, and in some cases the /WP pin.
11.1 STATUS REGISTER
11.1.1 BUSY
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a
Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register instruction. During this
time the device will ignore further instructions except for the Read Status Register and Erase Suspend
instruction (see t
register instruction has completed, the BUSY bit will be cleared to a 0 state indicating the device is ready
for further instructions.
W, tPP, tSE, tBE, and tCE in AC Characteristics). When the program, erase or write status
11.1.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to a 1 after executing a
Write Enable Instruction. The WEL status bit is cleared to a 0 when the device is write disabled. A write
disable state occurs upon power-up or after any of the following instructions: Write Disable, Page
Program, Sector Erase, Block Erase, Chip Erase and Write Status Register.
11.1.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4, S3, and
S2) that provide Write Protection control and status. Block Protect bits can be set using the Write Status
Register Instruction (see t
protected from Program and Erase instructions (see Status Register Memory Protection table). The
factory default setting for the Block Protection Bits is 0, none of the array protected.
W in AC characteristics). All, none or a portion of the memory array can be
11.1.4 Top/Bottom Block Protect (TB)
The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the
Top (TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table.
The factory default setting is TB=0. The TB bit can be set with the Write Status Register Instruction
depending on the state of the SRP0, SRP1 and WEL bits.
11.1.5 Sector/Block Protect (SEC)
The non-volatile Sector protect bit (SEC) controls if the Block Protect Bits (BP2, BP1, BP0) protect 4KB
Sectors (SEC=1) or 64KB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array as shown
in the Status Register Memory Protection table. The default setting is SEC=0.
Publication Release Date: July 08, 2010
- 13 - Revision F
W25Q16BV
11.1.6 Status Register Protect (SRP1, SRP0)
The Status Register Protect bits (SRP1 and SRP0) are non-volatile read/write bits in the status register
(S8 and S7). The SRP bits control the method of write protection: software protection, hardware
protection, power supply lock-down or one time programmable (OTP) protection.
SRP1 SRP0 /WP
0 0 X
0 1 0
0 1 1
1 0 X
1 1 X
Status
Register
Software
Protection
Hardware
Protected
Hardware
Unprotected
Power Supply
Lock-Down
One Time
Program
(1)
(1)
Description
/WP pin has no control. The Status register can be written to
after a Write Enable instruction, WEL=1. [Factory Default]
When /WP pin is low the Status Register locked and can not
be written to.
When /WP pin is high the Status register is unlocked and can
be written to after a Write Enable instruction, WEL=1.
Status Register is protected and can not be written to again
until the next power-down, power-up cycle.
(2)
Status Register is permanently protected and can not be
written to.
Note:
1. These features are available upon special order. Please refer to Ordering Information.
2. When SRP1, SRP0 = (1, 0), a power-down, power-up cycle will change SRP1, SRP0 to (0, 0) state.
11.1.7 Erase Suspend Status (SUS)
The Suspend Status bit is a read only bit in the status register (S15) that is set to 1 after executing an
Erase Suspend (75h) instruction. The SUS status bit is cleared to 0 by Erase Resume (7Ah) instruction
as well as a power-down, power-up cycle.
11.1.8 Quad Enable (QE)
The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (S9) that allows Quad SPI
operation. When the QE bit is set to a 0 state (factory default), the /WP pin and /HOLD are enabled.
When the QE bit is set to a 1, the Quad IO2 and IO3 pins are enabled, and /WP and /HOLD functions are
disabled.
WARNING: If the /WP or /HOLD pins are tied directly to the power supply or ground during
standard SPI or Dual SPI operation, the QE bit should never be set to a 1.
- 14 -
STATUS REGISTER PROTECT 0
(
)
)
(
STATUS REGISTER PROTECT 0
TOP/BOTTOM PROTECT
TOP/BOTTOM PROTECT
BLOCK PROTECT BITS
BLOCK PROTECT BITS
WRITE ENABLE LATCH
WRITE ENABLE LATCH
ERASE/WRITE IN PROGRESS
ERASE/WRITE IN PROGRESS
(non-volatile)
(non-volatile)
SECTOR PROTECT
SECTOR PROTECT
(non-volatile)
(non-volatile)
(non-volatile)
(non-volatile)
(non-volatile)
(non-volatile)
S7 S6 S5 S4 S3 S2 S1 S0
S7 S6 S5 S4 S3 S2 S1 S0
SRP0 SEC TB BP2 BP1 BP0 WEL BUSY
SRP0 SEC TB BP2 BP1 BP0 WEL BUSY
Figure 3a. Status Register-1
S15 S14 S13 S12 S11 S10 S9 S8
S15 S14 S13 S12 S11 S10 S9 S8
W25Q16BV
SUSPEND STATUS
SUSPEND STATUS
RESERVED
RESERVED
QUAD ENABLE
QUAD ENABLE
(non-volatile)
STATUS REGISTER PROTECT 1
STATUS REGISTER PROTECT 1
(non-volatile)
non-volatile
non-volatile
SUS (R) (R) (R) (R) (R) QE SRP1
SUS (R) (R) (R) (R) (R) QE SRP1
Figure 3b. Status Register-2
Publication Release Date: July 08, 2010
- 15 - Revision F
W25Q16BV
1 1.1.9 Status Register Memory Protection
STATUS REGISTER
SEC TB BP2 BP1 BP0 BLOCK(S) ADDRESSES DENSITY PORTION
(1)
W25Q16BV (16M-BIT) MEMORY PROTECTION
X X 0 0 0 NONE NONE NONE NONE
0 0 0 0 1 31 1F0000h – 1FFFFFh 64KB Upper 1/32
0 0 0 1 0 30 and 31 1E0000h – 1FFFFFh 128KB Upper 1/16
0 0 0 1 1 28 thru 31 1C0000h – 1FFFFFh 256KB Upper 1/8
0 0 1 0 0 24 thru 31 180000h – 1FFFFFh 512KB Upper 1/4
0 0 1 0 1 16 thru 31 100000h – 1FFFFFh 1MB Upper 1/2
0 1 0 0 1 0 000000h – 00FFFFh 64KB Lower 1/32
0 1 0 1 0 0 and 1 000000h – 01FFFFh 128KB Lower 1/16
0 1 0 1 1 0 thru 3 000000h – 03FFFFh 256KB Lower 1/8
0 1 1 0 0 0 thru 7 000000h – 07FFFFh 512KB Lower 1/4
0 1 1 0 1 0 thru 15 000000h – 0FFFFFh 1MB Lower 1/2
X X 1 1 X 0 thru 31 000000h – 1FFFFFh 2MB ALL
1 0 0 0 1 31 1FF000h – 1FFFFFh 4KB Top Block
1 0 0 1 0 31 1FE000h – 1FFFFFh 8KB Top Block
1 0 0 1 1 31 1FC000h – 1FFFFFh 16KB Top Block
1 0 1 0 X 31 1F8000h – 1FFFFFh 32KB Top Block
1 1 0 0 1 0 000000h – 000FFFh 4KB Bottom Block
1 1 0 1 0 0 000000h – 001FFFh 8KB Bottom Block
1 1 0 1 1 0 000000h – 003FFFh 16KB Bottom Block
1 1 1 0 X 0 000000h – 007FFFh 32KB Bottom Block
Note:
1. x = don’t care
- 16 -
W25Q16BV
11.2 INSTRUCTIONS
The instruction set of the W25Q16BV consists of thirty basic instructions that are fully controlled through
the SPI bus (see Instruction Set table1-3). Instructions are initiated with the falling edge of Chip Select
(/CS). The first byte of data clocked into the DI input provides the instruction code. Data on the DI input is
sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data
bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the
rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in figures 4
through 32. All read instructions can be completed after any clocked bit. However, all instructions that
Write, Program or Erase must complete on a byte boundary (/CS driven high after a full 8-bits have been
clocked) otherwise the instruction will be terminated. This feature further protects the device from
inadvertent writes. Additionally, while the memory is being programmed or erased, or when the Status
Register is being written, all instructions except for Read Status Register will be ignored until the program
or erase cycle has completed.
11.2.1 Manufacturer and Device Identification
MANUFACTURER ID (M7-M0)
Winbond Serial Flash
Device ID (ID7-ID0)
Instruction ABh, 90h
W25Q16BV 14h 4015h
EFh
(ID15-ID0)
9Fh
Publication Release Date: July 08, 2010
- 17 - Revision F
W25Q16BV
11.2.2 Instruction Set Table 1 (Erase, Program Instructions)
INSTRUCTION NAME
Write Enable 06h
Write Disable 04h
Read Status Register-1 05h (S7–S0)
Read Status Register-2 35h (S15-S8)
Write Status Register 01h (S7–S0) (S15-S8)
Page Program 02h A23–A16 A15–A8 A7–A0 (D7–D0)
Quad Page Program 32h A23–A16 A15–A8 A7–A0 (D7–D0, …)
Sector Erase (4KB) 20h A23–A16 A15–A8 A7–A0
Block Erase (32KB) 52h A23–A16 A15–A8 A7–A0
Block Erase (64KB) D8h A23–A16 A15–A8 A7–A0
Chip Erase C7h/60h
Erase Suspend 75h
Erase Resume 7Ah
Power-down B9h
BYTE 1
(CODE)
BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
(2)
(2)
(1)
(3)
Continuous Read Mode
(4)
Reset
FFh FFh
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being
read from the device on the DO pin.
2. The Status Register contents will repeat continuously until /CS terminates the instruction.
3. Quad Page Program Input Data:
IO0 = (D4, D0, ……)
IO1 = (D5, D1, ……)
IO2 = (D6, D2, ……)
IO3 = (D7, D3, ……)
4. This instruction is recommended when using the Dual or Quad “Continuous Read Mode” feature. See section
11.2.32 for more information.
- 18 -
W25Q16BV
11.2.3 Instruction Set Table 2 (Read Instructions)
INSTRUCTION NAME
Read Data 03h A23-A16 A15-A8 A7-A0 (D7-D0)
Fast Read 0Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0)
Fast Read Dual Output 3Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0, …)
Fast Read Dual I/O BBh A23-A8
Fast Read Quad Output 6Bh A23-A16 A15-A8 A7-A0 dummy (D7-D0, …)
Fast Read Quad I/O EBh A23-A0, M7-M0
Word Read Quad I/O
Octal Word Read
Quad I/O
(8)
BYTE 1
(CODE)
(7)
E7h A23-A0, M7-M0
E3h A23-A0, M7-M0
Notes:
1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
3. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3, …..)
4. Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0, …..)
IO1 = (x, x, x, x, D5, D1, …..)
IO2 = (x, x, x, x, D6, D2, …..)
IO3 = (x, x, x, x, D7, D3, …..)
6. Word Read Quad I/O Data
IO0 = (x, x, D4, D0, …..)
IO1 = (x, x, D5, D1, …..)
IO2 = (x, x, D6, D2, …..)
IO3 = (x, x, D7, D3, …..)
7. The lowest address bit must be 0. ( A0 = 0 )
8. The lowest 4 address bits must be 0. ( A0, A1, A2, A3 = 0 )
BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
(2)
A7-A0, M7-M0
(4)
(x,x,x,x, D7-D0, …)
(4)
(x,x, D7-D0, …)
(4)
(D7-D0, …)
(2)
(D7-D0, …)
(5)
(D7-D0, …)
(6)
(D7-D0, …)
(3)
(1)
(3)
(3)
(1)
(3)
Publication Release Date: July 08, 2010
- 19 - Revision F
W25Q16BV
11.2.4 Instruction Set Table 3 (ID, Security Instructions)
INSTRUCTION
NAME
Release Power down /
Device ID
Manufacturer/
Device ID
Manufacturer/Device ID
by Dual I/O
Manufacture/Device ID
by Quad I/O
JEDEC ID 9Fh
Read Unique ID 4Bh dummy dummy dummy dummy (ID63-ID0)
(2)
Notes:
1. The Device ID will repeat continuously until /CS terminates the instruction.
2. See Manufacturer and Device Identification table for Device ID information.
BYTE 1
(CODE)
ABh dummy dummy dummy (ID7-ID0)
90h dummy dummy 00h (MF7-MF0) (ID7-ID0)
92h A23-A8 A7-A0, M[7:0] (MF[7:0], ID[7:0])
94h A23-A0, M[7:0] xxxx, (MF[7:0], ID[7:0]) (MF[7:0], ID[7:0], …)
BYTE 2 BYTE 3 BYTE 4 BYTE 5 BYTE 6
(1)
(MF7-MF0)
Manufacturer
(ID15-ID8)
Memory Type
(ID7-ID0)
Capacity
- 20 -
W25Q16BV
11.2.5 Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to a
1. The WEL bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase and
Write Status Register instruction. The Write Enable instruction is entered by driving /CS low, shifting the
instruction code “06h” into the Data Input (DI) pin on the rising edge of CLK, and then driving /CS high.
Figure 4. Write Enable Instruction Sequence Diagram
11.2.6 Write Disable (04h)
The Write Disable instruction (Figure 5) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into the
DI pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and upon
completion of the Write Status Register, Page Program, Sector Erase, Block Erase and Chip Erase
instructions.
Figure 5. Write Disable Instruction Sequence Diagram
Publication Release Date: July 08, 2010
- 21 - Revision F
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