Willsemi WPM3401 Schematic [ru]

WPM3401

WPM3401

P-Channel Enhancement Mode MOSFET

www.willsemi.com

Description

The WPM3401 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.

This high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited for low
voltage application, notebook computer power management and
other battery powered circuits where high-side switching.

Features

z -30V/-4.3A,RDS(ON) 53m@VGS= -10V

z -30V/-3.4A,RDS(ON) 56m@VGS=-4.5V

z Super high density cell design for extremely low RDS (ON)

z Exceptional on-resistance and maximum DC current

capability

z SOT23-3

package design

<

<

Application

z Power Management in Note book

z Portable Equipment

z Battery Powered System

z DC/DC Converter

z Load Switch

P−Channel MOSFET

G

1

S

2

Top View

Drain

3

WP1U

G

1

Gate Source

= Date Code

U

= Specific Device Code

WP1

D

3

2

Order information

Part Number

WPM3401-3/TR SOT23-3 3000 Tape&Reel

http://www.willsemi.com Page 1

Package

Shipping

Oct,

0 2012 Rev 2.

2

Parameter

WPM3401

Absolute Maximum Ratings

Parameter

VDS Drain-Source voltage -30 V
VGS Gate-Source Voltage ±12 V

ID Continuous Drain

IDM Pulse Drain Current -20 A
PD Power Dissipation TA=25ć 1.3 W

TJ Operating Junction Temperature Range -55~150 ć
Tstg Storage Temperature Range

șJA

R

Thermal

Electrical Characteristics

(TA=25 Unlesк s otherwise noted)

Static

Drain-Source Breakdown Voltage V

Gate Threshold Voltage V

Gate Leakage Current I

Zero Gate Voltage Drain Current I

On State Drain Current (Pulse)

Drain-Source On-Resistance R



Current

Resistance-Junction

Parameter Symbol Conditions Min. Typ Max. Unit

(TA=25 unless otherwise specified)

Symbol

Steady-State TA=25ć -4.6 A
Steady-State TA=70ć -3.6

TA=70ć 0.8

Forward Transconductance gfs VDS=-15V,ID=-4.3A

Diode Forward Voltage V

к!

lParameter

to

Ambient

(BR)DSSVGS

GS(th)VDS=VGS,ID

VDS=0V,VGS=±12V ±100 nA

GSS

VDS=-24V,VGS=0V -1

DSS

V
T

D(on)

I

VDS= -5V,VGS =-4.5V -10 A

DS(on)

VGS=-10V,ID=-4.3A
VGS=-4.5V,ID=-3.5A

SD

IS= -1.0A,V

Value

95

Unit

ć/W

=0V,ID=-250uA -30

=-250uA

=-24V,VGS=0V

DS

J

=85к

-0.5

-1.0

-5

0.038

0.043

13 S

GS

=0V

-0.75

-1.5

0.053

0.056

-1.5

V

uA

ȍ

V

Dynamic

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Input Capacitance C

Output Capacitance C

106

Reverse Transfer Capacitance C

t

d(on)

g

gs

gd

iss

oss

rss

Turn-On Time

tr

d(off)

t

Turn-Off Time

t

f

http://www.willsemi.com Page 2

V

DS

=-15V,VGS=-10V

= -4.3A

D

I

VDS=-15V,VGS=0V
f=1MHz

VDD=-15V,RL=15ȍ
IDŁ-1.0A,V

GEN

=-10V

RG=6ȍ

27

1.7

5

1250

90

10

18

60

9

Oct,

0 2012 Rev 2.

nC

pF

nS

2

WPM3401

Typical Performance Characteristis

24

VGS=10V

20

16

12

8

,Drain Current(A)

D

I

4

0

012345

VDS,Drain-Source voltage(V)

VGS=6V

VGS=4V

VGS=3V

Drain Current VS Drain-Source voltage

0.11

0.09

0.07

0.05

ON Resistance(Ohm)

DS(ON)

0.03

R

0246810

VGS,Gate-Source Voltage(V)

ID=4.3A

120

100

80

VGS=4.5V

60

ON Resistance(mOhm)

40

DS(ON)

R

20

0 5 10 15 20

ID, Drain Current(A)

VGS=10V

Drain Current vs ON Resistance

25

VDS=2V

20

15

10

,Drain Current(A)

D

5

I

0

0123456

VGS,Gate-Source Voltage(V)

Gate-Source Voltage vs ON Resistance

1.5

1.2

0.9

0.6

0.3

IS, Source-Drain Current(A)

0.0

0.0 0.2 0.4 0.6 0.8

VDS,Drain-Source voltage(V)

Drain Current VS Source-Drain Current

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Drain Current VS Gate-Source Voltage

1.6

1.4

1.2

1

Normalized On-Resistance

0.8

0 25 50 75 100 125 150 175

VGS=-10V

VGS=-4.5V

Temperature (°C)

On-Resistance vs. Junction

Oct,

0 2012 Rev 2.

ID=-5A

2