White Electronic Designs WS1M8V-70CC, WS1M8V-85CIA, WS1M8V-85CMA, WS1M8V-85CI, WS1M8V-85CCA Datasheet

1

White Electronic Designs Corporation • [phone] • www.whiteedc.com

WS1M8V-XCX

2x512Kx8 DUALITHIC™ SRAM

ADVANCED*

FEATURES

■ Access Times 70, 85, 100ns

■ Evolutionary, Corner Power/Ground Pinout

■ Packaging:

•32 pin, Hermetic Ceramic DIP (Package 300)

■ Organized as two banks of 512Kx8

■ Commercial, Industrial and Military Temperature Ranges

■ 3.3V Power Supply

■ Low Power CMOS

■ TTL Compatible Inputs and Outputs

■ Output Enable Internally tied to GND.

*

This data sheet describes a product that may or may not be under
development and is subject to change or cancellation without notice.

February 2000 Rev. 2

NOTE:

1. CS

1 and CS2 are used to select the lower and upper 512Kx8 of the

device. CS1 and CS2 must not be enabled at the same time.

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

A18
A16
A14
A12

A7
A6
A5
A4
A3
A2
A1

A0
I/O0
I/O1
I/O2

GND

V

CC

A15
A17
WE
A13
A8
A9
A11
CS2
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3

PIN CONFIGURATION FOR WS1M8V-XCX

32 DIP

TOP VIEW

BLOCK DIAGRAM

512K x 8

512K x 8

A

0-18

WE

CS

1

CS

2

I/O

0-7

(1)
(1)

A0-18 Address Inputs
I/O0-7 Data Input/Output
CS1-2 Chip Selects

WE Write Enable
VCC +3.3V Power Supply

GND Ground

PIN DESCRIPTION

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White Electronic Designs Corporation • [phone] • www.whiteedc.com

WS1M8V-XCX

TRUTH TABLEABSOLUTE MAXIMUM RATINGS

Parameter Symbol Min Max Unit

Operating Temperature T

A -55 +125 °C

Storage Temperature T

STG -65 +150 °C

Signal Voltage Relative to GND V

G -0.5 +4.6 V

Junction Temperature T

J 150 °C

Supply Voltage V

CC -0.5 5.5 V

CS WE Mode Data I/O Power

H X Standby High Z Standby
L H Read Data Out Active
L L Write Data In Active

NOTE: OE is internally tied to GND.

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Condition Max Unit

Input capacitance CIN

VIN = 0V, f = 1.0MHz

28 pF

Output capicitance C

OUT

V

OUT

= 0V, f = 1.0MHz

28 pF

This parameter is guaranteed by design but not tested.

Parameter Symbol Min Max Unit

Supply Voltage V

CC 3.0 3.6 V

Input High Voltage V

IH 2.2 VCC + 0.3 V

Input Low Voltage V

IL -0.3 +0.8 V

Operating Temp. (Mil.) T

A -55 +125 °C

CAPACITANCE

(T

A = +25°C)

DC CHARACTERISTICS

(V

CC

= 5.0V, GND = 0V, TA = -55°C to +125°C)

Parameter Sym Conditions Units

Min Max

Input Leakage Current ILI VCC = 3.6, VIN = GND to VCC 10 µA
Output Leakage Current ILO

1

CS = VIH, VOUT = GND to VCC 10 µA

Operating Supply Current ICC

1

CS = VIL, f = 5MHz, Vcc = 3.6 25 mA

Standby Current ISB

1

CS = VIH, f = 5MHz, Vcc = 3.6 800 µA

Output Low Voltage VOL IOL = 2.1mA 0.4 V
Output High Voltage V

OH IOH = -1.0mA 2.4 V

NOTE: DC test conditions: VIH = VCC -0.3V , VIL = 0.3V

1. OE is internally tied to GND.