White Electronic Designs WS1M8-70CIA, WS1M8-70CM, WS1M8-70CI, WS1M8-70CCA, WS1M8-70CC Datasheet
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WS1M8-XCX
2x512Kx8 DUALITHIC™ SRAM
PIN CONFIGURATION FOR WS1M8-XCX
32 DIP
TOP VIEW
1
A18
A16
2
A14
3
A12
4
A7
5
A6
6
A5
7
8
A4
9
A3
10
A2
11
A1
12
A0
13
I/O0
14
I/O1
15
I/O2
16
GND
PIN DESCRIPTION
A0-18 Address Inputs
I/O0-7 Data Input/Output
CS1-2 Chip Selects
WE Write Enable
VCC +5.0V Power
GND Ground
32
CC
V
A15
31
30
A17
29
WE
28
A13
27
A8
26
A9
25
A11
24
CS2
23
A10
22
CS1
21
I/O7
20
I/O6
19
I/O5
18
I/O4
17
I/O3
PRELIMINARY*
FEATURES
■ Access Times 70, 85, 100ns
■ Evolutionary, Corner Power/Ground Pinout
■ Packaging:
■ Organized as two banks of 512Kx8
■ Commercial, Industrial and Military Temperature Ranges
■ 5 Volt Power Supply
■ Low Power CMOS
■ TTL Compatible Inputs and Outputs
■ Output Enable Internally tied to GND.
*
•32 pin, Hermetic Ceramic DIP (Package 300)
3
SRAM DUALITHICS
This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
BLOCK DIAGRAM
I/O
0-7
WE
A
0-18
512K x 8
(1)
CS
1
(1)
CS
2
NOTE:
1 and CS2 are used to select the lower and upper 512Kx8 of the
1. CS
device. CS1 and CS2 must not be enabled at the same time.
February 1998
512K x 8
1
White Microelectronics • Phoenix, AZ • (602) 437-1520
Parameter Symbol Min Max Unit
Operating Temperature T
Storage Temperature T
Signal Voltage Relative to GND V
Junction Temperature T
Supply Voltage V
A -55 +125 °C
STG -65 +150 °C
G -0.5 Vcc+0.5 V
J 150 °C
CC -0.5 7.0 V
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Max Unit
3
Supply Voltage V
Input High Voltage V
SRAM DUALITHICS
Input Low Voltage V
Operating Temp. (Mil.) T
CC 4.5 5.5 V
IH 2.2 VCC + 0.3 V
IL -0.3 +0.8 V
A -55 +125 °C
(V
Parameter Sym Conditions Units
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA
Output Leakage Current ILO1CS = VIH, VOUT = GND to VCC 10 µA
Operating Supply Current ICC1CS = VIL, f = 5MHz, Vcc = 5.5 55 mA
Standby Current ISB1CS = VIH, f = 5MHz, Vcc = 5.5 2 mA
Output Low Voltage VOL IOL = 2.1mA 0.4 V
Output High Voltage V
NOTE: DC test conditions: VIH = VCC -0.3V , VIL = 0.3V
1. OE is internally tied to GND.
OH IOH = -1.0mA 2.4 V
CS WE Mode Data I/O Power
H X Standby High Z Standby
L H Read Data Out Active
L L Write Data In Active
NOTE: OE is internally tied to GND.
Parameter
Input capacitance CIN
Output capicitance C
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
CC
= 5.0V, GND = 0V, TA = -55°C to +125°C)
WS1M8-XCX
TRUTH TABLEABSOLUTE MAXIMUM RATINGS
CAPACITANCE
A = +25°C)
(T
Symbol
OUT
Min Max
Condition Max Unit
VIN = 0V, f = 1.0MHz
V
OUT
= 0V, f = 1.0MHz
28 pF
28 pF
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
Parameter Symbol Conditions Units
Min Typ Max
Data Retention Supply Voltage V
Data Retention Current I
* Also available in Low Power version. Please call factory for information.
White Microelectronics • Phoenix, AZ • (602) 437-1520
DR CS ≥ VCC -0.2V 2.0 5.5 V
CCDR1 VCC = 3V 150 800* µA
2
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