White Electronic Designs EDI88256LP70CM, EDI88256LP70CI, EDI88256LP70CC, EDI88256LP70CB, EDI88256C70CM Datasheet

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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
HI-RELIABILITY PRODUCT
EDI88257C
256Kx8 Monolithic SRAM
FEATURES
256Kx8 CMOS Static
Random Access Memory
• Data Retention Function (LP Versions)
• TTL Compatible Inputs and Outputs
• Fully Static, No Clocks
JEDEC Approved Pinout
• 32 pin Ceramic DIP, 0.6 mils wide (Package 9)
Single +5V (±10%) Supply Operation
September 1999 Rev. 2
PIN DESCRIPTION
A0-17 Address Inputs
W Write Enable
E Chip Enable G Output Enable
DQ0-7 Data Inputs/Outputs
VCC Power (+5V ±10%) VSS Ground
NC Not Connected
BLOCK DIAGRAM
FIG. 1 PIN CONFIGURATION
The EDI88257C is a 2 Megabit 256Kx8 bit Monolithic CMOS Static RAM.
The 32 pin DIP pinout adheres to the JEDEC standard for the two megabit device, and is a pin replacement for the 256Kx8 module, EDI88257C. The device is upgradeable to the 512Kx8 SRAM, the EDI88512C. Pin 1 becomes the higher order address.
A Low Power version, EDI88257LP, offers a data retention func­tion for battery back-up opperation. Military product is available compliant to Appendix A of MIL-PRF-38535.
32 DIP
TOP VIEW
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
1 2 3 4 5 6 7 8
9 10 11 12 13 14 15 16
V
CC
A
15
A
17
W A
13
A
8
A
9
A
11
G A
10
E DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
Ø
DQ
Ø
DQ
1
DQ
2
V
SS
Memory Array
Address
Buffer
Address Decoder
I/O
Circuits
A
Ø-17
DQ
Ø-7
W
E
G
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
EDI88257C
ABSOLUTE MAXIMUM RATINGS
Parameter Unit
Voltage on any pin relative to Vss -0.5 to 7.0 V
Operating Temperature TA (Ambient)
Industrial -40 to +85 °C Military -55 to +125 °C Storage Temperature, Ceramic -65 to +150 °C Power Dissipation 1 W Output Current 20 mA Junction Temperature, T
J 175 °C
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Typ Max Unit
Supply Voltage VCC 4.5 5.0 5.5 V Supply Voltage VSS 000V Input High Voltage VIH 2.2 Vcc +0.5 V Input Low Voltage V
IL -0.3 +0.8 V
Parameter
Symbol
Condition Max Unit
Address Lines CI
VIN = Vcc or Vss, f = 1.0MHz
30 pF
Data Lines C
D/QVOUT
= Vcc or Vss, f = 1.0MHz
14 pF
These parameters are sampled, not 100% tested.
CAPACITANCE
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indi­cated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Input Pulse Levels VSS to 3.0V Input Rise and Fall Times 5ns Input and Output Timing Levels 1.5V Output Load Figure 1
NOTE: For t
EHQZ, tGHQZ and tWLQZ, CL = 5pF Figure 2)
30pF
480
Vcc
Q
Figure 1 Figure 2
255
5pF
480
Vcc
Q
255
AC TEST CONDITIONS
Parameter Symbol Conditions Units
Min Typ Max
Input Leakage Current ILI VIN = 0V to VCC ——±10 µA Output Leakage Current ILO VI/O = 0V to VCC ——±10 µA Operating Power Supply Current ICC1 W, E = VIL, II/O = 0mA, Min Cycle (70-100ns) 45 75 mA Standby (TTL) Power Supply Current ICC2 E ≥ VIH, VIN ≤ VIL, VIN ≥ VIH —310mA
E VCC -0.2V
C— — 5mA
Full Standby Power Supply Current ICC3
VIN Vcc -0.2V or VIN 0.2V
LP 1 mA Output Low Voltage VOL IOL = 2.1mA 0.4 V Output High Voltage V
OH IOH = -1.0mA 2.4 V
DC CHARACTERISTICS
(VCC = 5V, TA = +25°C)
TRUTH TABLE
G E W Mode Output Power
X H X Standby High Z Icc
2, Icc3
H L H Output Deselect High Z Icc1 L L H Read Data Out Icc1 X L L Write Data In Icc1
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