Westcode Semiconductors WPT 225-12, WPH 225-12, WPT 225-14, WPH 225-14, WPT 225-16 Data Sheet
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WESTCODE
SEMICONDUCTORS
Thyristor Modules
Thyristor/Diode Modules
V
RSM
V
DSM
VV
1300 1200 WPT 225-12 WPH 225-12
1500 1400 WPT 225-14 WPH 225-14
1700 1600 WPT 225-16 WPH 225-16
1900 1800 WPT 225-18 WPH 225-18
Symbol Test Conditions Maximum Ratings
I
TRMS
I
TAVM
, I
I
TSM
FSM
2
∫∫
dt TVJ = 45°C t = 10 ms (50 Hz) 320 000 A2s
∫i
∫∫
(di/dt)
cr
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight Typical including screws 750 g
V
RRM
V
DRM
TVJ = T
VJM
TC = 85°C; 180° sine 221 A
Type
400 A
TVJ = 45°C; t = 10 ms (50 Hz) 8000 A
VR = 0 t = 8.3 ms (60 Hz) 8500 A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) 7700 A
t = 10 ms (50 Hz) 7000 A
VR = 0 t = 8.3 ms (60 Hz) 300 000 A2s
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) 246 000 A2s
TVJ = T
VJM
f =50 Hz, tP =200 µs
VD = 2/3 V
IG = 1 A, non repetitive, IT = I
DRM
diG/dt = 1 A/µs
TVJ = T
RGK = ∞; method 1 (linear voltage rise)
TVJ = T
I
= I
T
; VDR = 2/3 V
VJM
VJM
TAVM
t = 10 ms (50 Hz) 245 000 A2s
repetitive, IT = 750 A 100 A/µs
TAVM
DRM
500 A/µs
1000 V/µs
tP = 30 µs 120 W
tP = 500 µs60W
20 W
10 V
-40...+130 °C
130 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 3000 V~
I
≤ 1 mA t = 1 s 3600 V~
ISOL
Mounting torque (M6) 4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.
I
TRMS
I
TAVM
V
RRM
= 2 x 400 A
= 2 x 221 A
= 1200 - 1800 V
3
2
1
3 6 7 1 5 4 2
WPT 225
3 1 5 4 2
WPH 225
Features
●
International standard package
●
Direct copper bonded Al2O3-ceramic
with copper base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
Keyed gate/cathode twin pins
Applications
●
Motor control, softstarter
●
Power converter
●
Heat and temperature control for
industrial furnaces and chemical
processes
●
Lighting control
●
Solid state switches
Advantages
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
7
6
5
4
Symbol Test Conditions Characteristic Values
, I
I
RRM
DRM
, V
V
T
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a Maximum allowable acceleration 50 m/s
TVJ= T
; VR = V
VJM
RRM
; VD = V
DRM
40 mA
IT, IF = 600 A; TVJ = 25°C 1.40 V
For power-loss calculations only (TVJ = 130°C) 0.8 V
0.76 mΩ
VD = 6 V; TVJ = 25°C2V
TVJ = -40°C3V
VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 220 mA
TVJ = T
TVJ = T
;V
VJM
;V
VJM
D
D
= 2/3 V
= 2/3 V
DRM
DRM
0.25 V
10 mA
TVJ = 25°C; tP = 30 µs; VD = 6 V 200 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA
TVJ = 25°C; VD = 1/2 V
IG = 1 A; diG/dt = 1 A/µs
TVJ = T
VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 V
; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. 200 µs
VJM
DRM
DRM
2 µs
TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/µs 550 µC
235 A
per thyristor (diode); DC current 0.157 K/W
per module other values 0.08 K/W
per thyristor (diode); DC current see Fig. 8/9 0.197 K/W
per module 0.1 K/W
Creeping distance on surface 12.7 mm
Creepage distance in air 9.6 mm
10
10
1: IGT, T
1: IGT, T
2: I
2: I
V
V
3: I
3: I
V
V
G
G
1
1
0.1
0.1
-3
-3
10
10
GT
GT
GT
GT
IGD, T
IGD, T
, T
, T
, T
, T
VJ
VJ
10
10
= 140°C
= 130°C
VJ
VJ
= 25°C
= 25°C
VJ
VJ
= -40°C
= -40°C
VJ
VJ
1
1
= 140°C
= 130°C
-2
-2
2
2
-1
-1
10
10
Fig. 1 Gate trigger characteristics
100
100
s
s
µ
µ
t
t
gd
gd
typ.
typ.
10
10
2
3
3
Limit
Limit
6
6
5
5
4
4
4: P
= 20 W
4: P
= 20 W
GM
GM
= 60 W
= 60 W
5: P
5: P
GM
GM
= 120 W
= 120 W
6: P
6: P
GM
GM
0
1
0
10
10
10
10
I
I
G
G
T
= 25°C
T
= 25°C
VJ
VJ
2
1
2
10
10
A
A
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type U9911 UL 758, style 1385,
CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
WPT 225 WPH 225
M8x20
M8x20
1
1
0.01 0.1 1 10
0.01 0.1 1 10
I
I
G
G
Fig. 2 Gate trigger delay time
A
A
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