Westcode Semiconductors RX075FD24#, RX075FD28# Data Sheet
Distributed Gate Thyristor
Type RX075FD24# to RX075FD28#
Absolute Maximum Ratings
Date:- 25 Jun, 2003
Data Sheet Issue:- 1
Prospective Data
(Development Type No.)
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 2400-2800 V
Non-repetitive peak off-state voltage, (note 1) 2400-2800 V
Repetitive peak reverse voltage, (note 1) 2400-2800 V
Non-repetitive peak reverse voltage, (note 1) 2500-2900 V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
T
HS
T
stg
Maximum mean on-state current, T
Maximum mean on-state current. T
Maximum mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
t capacity for fusing tp=10ms, V
I
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
Peak forward gate power 50 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
MAXIMUM
LIMITS
MAXIMUM
LIMITS
=55°C, (note 2) 3814 A
sink
=85°C, (note 2) 2553 A
sink
=85°C, (note 3) 1493 A
sink
=25°C, (note 2) 7632 A
sink
=25°C, (note 4) 6370 A
sink
, (note 5) 64.5 kA
RRM
≤
RM
≤
10V, (note 5)
RM
10V, (note 5)
, (note 5) 20.8×10
RRM
71.0 kA
6
25.2×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
, IFG=2A, t
DRM
≤
0.5µs, T
r
case
=125°C.
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 1 of 9 June, 2003
WESTCODE
An IXYS Company
Characteristics
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
TM
V
0
r
S
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
Q
I
rm
t
rr
t
q
R
th(j-hs)
F Mounting force 81 - 99 kN
W
Maximum peak on-state voltage - - 2.10 ITM=4000A V
Maximum peak on-state voltage - - 3.16 ITM=12000A V
Threshold voltage - - 1.568 V
Slope resistance - - 0.133
, Linear ramp, Gate o/c
DRM
Peak off-state current - - 300 Rated V
Peak reverse current - - 300 Rated V
Gate trigger voltage - - 3.0 V
Gate trigger current - - 600
Non-trigger gate voltage - - 0.25 Rated V
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 1.0 2.0
Turn-on time - 1.5 3.0
Recovered charge - 3000 - µC
rr
Recovered charge, 50% Chord - 1800 2000 µC
ra
Reverse recovery current - 320 - A
Reverse recovery time - 12 -
100 - 160
Turn-off time (note 2)
140 - 200
Thermal resistance, junction to heatsink
Weight - 2.8 - kg
t
- - 0.0065 Double side cooled K/W
- - 0.0130 Single side cooled K/W
T
V
I
FG
I
TM
V
ITM=4000A, tp=2000µs, di/dt=60A/µs,
V
ITM=4000A, tp=2000µs, di/dt=60A/µs,
V
DRM
RRM
=25°C VD=10V, IT=3A
j
DRM
=67% V
D
=2A, tr=0.5µs, Tj=25°C
=4000A, tp=2000µs, di/dt=60A/µs,
=100V
r
=100V, Vdr=67%V
r
=100V, Vdr=67%V
r
, ITM=1000A, di/dt=60A/µs,
DRM
(Note 1)
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
mA
V
µs
µs
µs
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information
2)
for details of t
codes.
q
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 2 of 9 June, 2003
WESTCODE
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
An IXYS Company
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#
V
Voltage Grade
24 2400 2500 1450
26 2600 2700 1550
28 2800 2900 1650
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
GT
.
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 3 of 9 June, 2003
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