Distributed Gate Thyristor
Type RX075FD24# to RX075FD28#
Absolute Maximum Ratings
Date:- 25 Jun, 2003
Data Sheet Issue:- 1
Prospective Data
(Development Type No.)
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 2400-2800 V
Non-repetitive peak off-state voltage, (note 1) 2400-2800 V
Repetitive peak reverse voltage, (note 1) 2400-2800 V
Non-repetitive peak reverse voltage, (note 1) 2500-2900 V
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)M
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
T
HS
T
stg
Maximum mean on-state current, T
Maximum mean on-state current. T
Maximum mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
t capacity for fusing tp=10ms, V
I
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
Peak forward gate power 50 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
MAXIMUM
LIMITS
MAXIMUM
LIMITS
=55°C, (note 2) 3814 A
sink
=85°C, (note 2) 2553 A
sink
=85°C, (note 3) 1493 A
sink
=25°C, (note 2) 7632 A
sink
=25°C, (note 4) 6370 A
sink
, (note 5) 64.5 kA
RRM
≤
RM
≤
10V, (note 5)
RM
10V, (note 5)
, (note 5) 20.8×10
RRM
71.0 kA
6
25.2×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
, IFG=2A, t
DRM
≤
0.5µs, T
r
case
=125°C.
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 1 of 9 June, 2003
WESTCODE
An IXYS Company
Characteristics
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
TM
V
0
r
S
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
Q
I
rm
t
rr
t
q
R
th(j-hs)
F Mounting force 81 - 99 kN
W
Maximum peak on-state voltage - - 2.10 ITM=4000A V
Maximum peak on-state voltage - - 3.16 ITM=12000A V
Threshold voltage - - 1.568 V
Slope resistance - - 0.133
, Linear ramp, Gate o/c
DRM
Peak off-state current - - 300 Rated V
Peak reverse current - - 300 Rated V
Gate trigger voltage - - 3.0 V
Gate trigger current - - 600
Non-trigger gate voltage - - 0.25 Rated V
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 1.0 2.0
Turn-on time - 1.5 3.0
Recovered charge - 3000 - µC
rr
Recovered charge, 50% Chord - 1800 2000 µC
ra
Reverse recovery current - 320 - A
Reverse recovery time - 12 -
100 - 160
Turn-off time (note 2)
140 - 200
Thermal resistance, junction to heatsink
Weight - 2.8 - kg
t
- - 0.0065 Double side cooled K/W
- - 0.0130 Single side cooled K/W
T
V
I
FG
I
TM
V
ITM=4000A, tp=2000µs, di/dt=60A/µs,
V
ITM=4000A, tp=2000µs, di/dt=60A/µs,
V
DRM
RRM
=25°C VD=10V, IT=3A
j
DRM
=67% V
D
=2A, tr=0.5µs, Tj=25°C
=4000A, tp=2000µs, di/dt=60A/µs,
=100V
r
=100V, Vdr=67%V
r
=100V, Vdr=67%V
r
, ITM=1000A, di/dt=60A/µs,
DRM
(Note 1)
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
mA
V
µs
µs
µs
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information
2)
for details of t
codes.
q
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 2 of 9 June, 2003
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
An IXYS Company
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#
V
Voltage Grade
24 2400 2500 1450
26 2600 2700 1550
28 2800 2900 1650
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
GT
.
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 3 of 9 June, 2003
WESTCODE
(
)
9.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown thus:
An IXYS Company
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#
(ii) Qrr is based on a 150µs integration time i.e.
=
(iii)
FactorK
10.0 Reverse Recovery Loss
10.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
⋅+⋅−=
RfkETT
()
−
)()(
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R
The total dissipation is now given by:
= d.c. thermal resistance (°C/W).
th(J-Hs)
HsJthoriginalSINKnewSINK
150
s
µ
dtiQ
.
rrrr
∫
0
t
1
=
t
2
fEWW
(original)(TOT)
10.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
() ( )
Where T
T
SINK (original)
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 4 of 9 June, 2003
SINK (new)
is the required maximum heat sink temperature and
is the heat sink temperature given with the frequency ratings.
) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
rm
⋅+=
()
⋅⋅−=
fRETT
thoriginalSINKnewSINK
WESTCODE
p
p
11.0 Computer Modelling Parameters
11.1 Calculating VT using ABCD Coefficients
An IXYS Company
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics.
The resulting values for V
to that plotted.
11.2 D.C. Thermal Impedance Calculation
given below:
T
vs VT, on page 7 can be represented in two ways;
T
and rT tangent used for rating purposes and
T0
()
ln
agree with the true device characteristic over a current range, which is limited
T
25°C Coefficients 125°C Coefficients
A 1.5256156 A 1.6358306
B 0.07839183 B -0.03874637
C 8.061984×10
D -3.056955×10
-5
-3
=
∑
=
p
C 1.040185×10
D 5.841671×10
−
np
1
pt
1
t
τ
p
err
−⋅=
⋅+⋅+⋅+=
IDICIBAV
TTTT
-4
-3
T
in
Where
p = 1
Term 1 2 3
r
p
τ
p
Term 1 2 3 4
r
p
τ
p
n, n
to
t = Duration of heating pulse in seconds.
= Thermal resistance at time t.
r
t
r
= Amplitude of pth term.
τ
= Time Constant of rth term.
is the number of terms in the series.
D.C. Single Side Cooled
5.228149×10
0.9862513 0.2593041 0.03447094
0.01186497 3.872272×10
7.361938 1.651253 0.2019036 0.02934724
-3
D.C. Double Side Cooled
3.076205×10
-3
-3
3.457033×10
1.977511×10
-3
1.694157×10
-3
-3
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 5 of 9 June, 2003
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An IXYS Company
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#
Curves
Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance
(A)
T
10000
RX075FD24#-28#
Issue 1
Tj = 125°C Tj = 25°C
(K/W)
(th)t
0.1
0.01
RX075FD24#-28#
Issue 1
SSC
0.0130K/W
DSC
0.0065K/W
1000
Instantaneous on-state current - I
100
01234
Instantaneous on-state voltage - V
(V)
T
0.001
Transient Thermal Impedance - Z
0.0001
0.00001
0.0001 0.001 0.01 0.1 1 10 100
Time (s)
Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves
8
RX075FD24#-28#
Issue 1
Tj=25°C
7
6
Max VG dc
16
RX075FD24#-28#
Tj=25°C
14
12
Issue 1
Max VG dc
(V)
5
GT
IGT, V
GT
4
3
Gate Trigger Voltage - V
2
1
IGD, V
GD
0
0 0.25 0.5 0.75 1 1.25 1.5
Gate Trigger Current - I
125°C
25°C
-10°C
GT
-40°C
Min VG dc
(A)
(V)
10
GT
PG Max 50W dc
8
6
Gate Trigger Voltage - V
4
2
0
0246810
PG 5W dc
Gate Trigger Cur rent - I
Min VG dc
(A)
GT
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 6 of 9 June, 2003
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An IXYS Company
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#
Figure 5 - Total recovered charge, Q
10000
RX075FD24#-28#
Issue 1
Tj = 125°C
(µC)
rr
Total recovered charge - Q
1000
10 100 1000
Commutation rate - d i/dt (A/µs)
rr
4kA
3kA
2kA
1kA
Figure 6 - Recovered charge, Qra (50% chord)
10000
RX075FD24#-28#
Issue 1
Tj = 125°C
(µC)
ra
1000
Recovered charge - Q
100
10 100 1000
Commutation rate - d i/dt (A/µs)
4kA
3kA
2kA
1kA
Figure 7 - Peak reverse recovery current, I
10000
RX075FD24#-28#
Issue 1
Tj = 125°C
(A)
rm
1000
Reverse recovery current - I
100
10 100 1000
Commutation rate - d i/dt (A/µs)
4kA
3kA
2kA
1kA
rm
Figure 8 - Maximum recovery time, trr (50% chord)
100
(µs)
rr
10
Reverse recovery time - t
1
10 100 1000
Commuta tion rate - d i/dt (A/µs)
RX075FD24#-28#
Issue 1
Tj = 125°C
4kA
3kA
2kA
1kA
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 7 of 9 June, 2003
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Figure 9 - Reverse recovery energy per pulse
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10000
RX075FD24#-28#
Issue 1
Vrm =0.67%V
Tj = 125°C
Snubber
0.5µF, 6
(mJ)
r
1000
Energy per pulse - E
Ω
DRM
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#
4kA
3kA
2kA
1kA
100
10 100 1000
Figure 10 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
1000000
(A)
TSM
100000
RX075FD24#-28#
Issue 1
Tj (initial) = 125°C
Commutation rate - di/dt (A/µs)
I2t: V
RRM
I2t: 60% V
I
: V
TSM
RRM
≤
≤
10V
RRM
10V
1.00E+09
1.00E+08
s)
2
t (A
2
Maximum I
Total peak half sine surge current - I
10000
135101 510 50100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
I
TSM
: 60% V
RRM
1.00E+07
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 8 of 9 June, 2003
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Outline Drawing & Ordering Information
An IXYS Company
Distributed Gate Thyristor Types RX075FD24# to RX075FD28#
101A347
ORDERING INFORMATION
RX075 FD
Fixed
Type Code
Typical order code: RX075FD28S – 2800V V
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The i nformation may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Fixed
Outline Code
, V
DRM
, 160µs tq, 26mm clamp height capsule.
RRM
www.westcode.com
www.ixys.com
(Please quote 10 digit code as below)
♦ ♦
♦ ♦ ####
♦ ♦♦ ♦
Fixed Voltage Code
/100
V
DRM
28
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
E-mail: WSL.sales@westcode,com
E-mail: WSI.sales@westcode.com
Code
t
q
R = 140µs, S = 160µs,
T = 200µs
Westcode Semiconductors Ltd
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
Westcode Semiconductors Inc
3270 Cherry Avenue
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
© Westcode Semiconductors Ltd.
Prospective Data Sheet. Types RX075FD24# to RX075FD28# Issue 1 Page 9 of 9 June, 2003
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