Westcode Semiconductors R3708FC40#, R3708FC45# Data Sheet

Date:- 17 Oct, 2007

WESTCODE

Data Sheet Issue:- 4

An IXYS Company

Distributed Gate Asymmetric Thyristor

Type R3708FC40# to R3708FC45#

(Old Type Number: R1386CH40-45)

Absolute Maximum Ratings

VOLTAGE RATINGS

V

DRM

V

DSM

V

RRM

V

RSM

Repetitive peak off-state voltage, (note 1) 4000-4500 V

Non-repetitive peak off-state voltage, (note 1) 4000-4500 V

Repetitive peak reverse voltage, (note 1) 2500-3000 V

Non-repetitive peak reverse voltage, (note 1) 2600-3100 V

OTHER RATINGS

I

T(AV)M

I

T(AV)M

I

T(AV)M

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2tI

I2t

(di/dt)crCritical rate of rise of on-state current (note 6)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

Maximum average on-state current, T

Maximum average on-state current. T

Maximum average on-state current. T

Nominal RMS on-state current, T

D.C. on-state current, T

Peak non-repetitive surge tp=10ms, Vrm=60%V

Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

2

t capacity for fusing tp=10ms, Vrm=60%V

I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

Peak reverse gate voltage 5 V

Mean forward gate power 4 W

Peak forward gate power 50 W

Operating temperature range -40 to +125 °C

Storage temperature range -40 to +150 °C

=25°C, (note 4) 6275 A

sink

=55°C, (note 2) 3708 A

sink

=85°C, (note 2) 2516 A

sink

=85°C, (note 3) 1498 A

sink

=25°C, (note 2) 7364 A

sink

RRM

, (note 5) 50 A

RRM

, (note 5) 12.50×10

Single Shot 1000

Repetitive (50Hz, 60s) 500

Continuous (50Hz) 250

MAXIMUM

LIMITS

MAXIMUM

LIMITS

55 A

6

15.13×10

6

UNITS

UNITS

A2s

A2s

A/µs

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 Page 1 of 12 October, 2007

, IFG=2A, tr≤0.5µs, T

DRM

initial.

j

case

=125°C.

below 25°C.

j

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WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45#

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Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

TM

V

T0

r

T

(dv/dt)crCritical rate of rise of off-state voltage 200 - - VD=80% V

I

DRM

I

RRM

V

GT

I

GT

V

GD

I

H

t

gd

t

gt

Q

rr

Q

ra

I

rm

t

rr

t

q

R

thJK

Maximum peak on-state voltage - - 2.1 ITM=4000A V

Threshold voltage - - 1.473 V

Slope resistance - - 0.156

, Linear ramp, Gate o/c

DRM

Peak off-state current - - 200 Rated V

Peak reverse current - - 200 Rated V

Gate trigger voltage - - 3.0 V

T

Gate trigger current - - 600

Gate non-trigger voltage - - 0.25 Rated V

DRM

RRM

=25°C VD=10V, IT=3A

j

DRM

mΩ

V/µs

mA

mA

mA

V

Holding current - - 1000 Tj=25°C mA

Gate controlled turn-on delay time 0.8 2.0

Turn-on time - 2.0 3.0

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

, ITM=4000A, di/dt=60A/µs,

DRM

µs

Recovered charge - 8800 - µC

Recovered charge, 50% Chord - 4000 5100 µC

Reverse recovery current - 400 - A

Reverse recovery time - 20 -

- 250 -

Turn-off time (note 2)

- 300 -

Thermal resistance, junction to heatsink
(note 3)

- - 0.0065 Double side cooled K/W

- - 0.013 Single side cooled K/W

I

=4000A, tp=2000µs, di/dt=60A/µs,

TM

V

=100V

r

ITM=4000A, tp=2000µs, di/dt=60A/µs,
V

=100V, Vdr=67%V

r

, dVdr/dt=20V/µs

DRM

ITM=4000A, tp=2000µs, di/dt=60A/µs,
V

=100V, Vdr=67%V

r

, dVdr/dt=200V/µs

DRM

µs

µs

F Mounting force 81 - 99 kN

W

Weight - 2.8 - kg

t

Notes:-

1) Unless otherwise indicated T

2) The required t

details of t

(specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for

q

codes.

q

=125°C.

j

3) For other clamp forces, please consult factory

Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 Page 2 of 12 October, 2007

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WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45#

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM

V

V

RRM

V

V

RSM

V

V

D

DC V

V

DC V
40 4000 2500 2600 2000 1500
42 4200 2700 2800 2040 1600
44 4400 2900 3000 2080 1700
45 4500 3000 3100 2100 1750

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

6.0 Snubber Components

R

When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

7.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

(t

p1

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

should remain flowing for the same duration as the anode current and have a

G

GT

.

Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 Page 3 of 12 October, 2007

WESTCODE

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45#

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9.0 Frequency Ratings

The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.

10.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

11.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

12.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

f

13.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.

Then the average dissipation will be:

14.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig. 1

=

vqpulse ttt

++

be the Energy per pulse for a given current and pulse width, in joules

Let E

p

Let R
and T

be the steady-state d.c. thermal resistance (junction to sink)

thJK

be the heat sink temperature.

K

.)(max

()

RWTfEW ⋅−=⋅= 125 and

thJKAVKPAV

Fig. 1

max

1

(ii) Qrr is based on a 150µs integration time i.e.

=

(iii)

FactorK =

Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 Page 4 of 12 October, 2007

150

s

µ

dtiQ

.

rrrr

∫

0

t

1

t

2