Westcode Semiconductors R3636EC16#, R3636EC20# Data Sheet

Date:- 30 Mar, 2007

WESTCODE

An IXYS Company

Distributed Gate Thyristor

Types R3636EC16# to R3636EC20#

Absolute Maximum Ratings

VOLTAGE RATINGS (Note 1)

V

DRM

V

DSM

V

RRM

V

RSM

I

T(AV)

I

T(AV)

I

T(AV)

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2tI

I2t

diT/dt

V

RGM

P

G(AV)

P

GM

V

GD

T

j op

T

stg

Repetitive peak off-state voltage 1600-2000 V

Non-repetitive peak off-state voltage 1600-2000 V

Repetitive peak reverse voltage 1600-2000 V

Non-repetitive peak reverse voltage 1700-2100 V

OTHER RATINGS

Maximum average on-state current, T

Maximum average on-state current. T

Maximum average on-state current. T

Nominal RMS on-state current, T

D.C. on-state current, T

=25°C (note 4) 6233 A

sink

Peak non-repetitive surge tp=10ms, VRM=0.6V

Peak non-repetitive surge tp=10ms, VRM≤10V (note 5)

2

t capacity for fusing tp=10ms, VRM=0.6V

2

I

t capacity for fusing tp=10ms, VRM≤10V (note 5)

Maximum rate of rise of on-state current (repetitive) (Note 6) 500 A/µs

Maximum rate of rise of on-state current (non-repetitive) (Note 6) 1000 A/µs

Peak reverse gate voltage 5 V

Mean forward gate power 4 W

Peak forward gate power 50 W

Non-trigger gate voltage (Note 7) 0.25 V

Operating temperature range -40 to +125 °C

Storage temperature range -40 to +150 °C

=55°C (note 2) 3636 A

sink

=85°C (note 2) 2501 A

sink

=85°C (note 3) 1518 A

sink

=25°C (note 2) 7168 A

sink

(note 5) 38.9 kA

RRM

(note 5) 7.57×10

RRM

Data Sheet Issue:- 1

MAXIMUM

LIMITS

MAXIMUM

LIMITS

42.7 kA

6

9.12×10

6

UNITS

UNITS

A2s

A2s

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

7) Rated V

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 1 of 12 March, 2007

, IFG=2A, tr≤0.5µs, T

DRM

.

DRM

initial.

j

case

=125°C.

below 25°C.

j

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

Maximum peak on-state voltage - - 1.95 ITM=5000A V

TM

V

Maximum peak on-state voltage - - 2.86 ITM=10700A V

TM

V

Threshold voltage - - 1.173 V

0

r

Slope resistance - - 0.155

S

dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V

I

Peak off-state current - 60 300 Rated V

DRM

I

Peak reverse current - - 300 Rated V

RRM

V

Gate trigger voltage - - 3.0 V

GT

I

Gate trigger current - - 600

GT

V

Gate non-trigger voltage - - 0.25 Rated V

GD

I

Holding current - - 1000 Tj=25°C mA

H

t

Gate-controlled turn-on delay time - 0.8 1.5

gd

t

Turn-on time - 1.0 2.0

gt

Q

Recovered charge - 1750 - µC

rr

Q

Recovered charge, 50% chord - 750 1500 µC

ra

I

Reverse recovery current - 220 - A

rm

t

Reverse recovery time, 50% chord - 7.5 -

rr

- - 140

t

Turn-off time

q

60 - 200

R

Thermal resistance, junction to heatsink

thJK

- - 0.0075 Double side cooled K/W

- - 0.0150 Single side cooled K/W

=25°C VD=10V, IT=3A

T

j

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

I

=4000A, tp=2000µs, di/dt=60A/µs,

TM

V

=100V

r

ITM=4000A, tp=2000µs, di/dt=60A/µs,
V

=100V, Vdr=67%V

r

ITM=4000A, tp=2000µs, di/dt=60A/µs,
V

=100V, Vdr=67%V

r

, gate o/c, linear ramp

DRM

DRM

RRM

DRM

, IT=2000A, di/dt=60A/µs,

DRM

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

F Mounting force 63 - 77 kN

W

Weight - 1.23 - kg

t

mΩ

V/µs

mA

mA

mA

µs

µs

µs

Notes:-

1) Unless otherwise indicated T

2) The required t

details of t

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 2 of 12 March, 2007

(specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for

q

codes.

q

=125°C.

j

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

V

Voltage Grade

16 1600 1700 1040
18 1800 1900 1150
20 2000 2100 1250

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

6.0 Rate of rise of on-state current

DRM VDSM VRRM

V

V

RSM

V

V

D VR

DC V

The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

1

max

f

=

vqpulse ttt

++

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 3 of 12 March, 2007

WESTCODE An IXYS Company Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.

be the Energy per pulse for a given current and pulse width, in joules

Let E

p

Let R
and T

Then the average dissipation will be:

be the steady-state d.c. thermal resistance (junction to sink)

thJK

be the heat sink temperature.

K

11.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.

is based on a 150µs integration time.

(ii) Q

rr

i.e.

(iii)

12.0 Reverse Recovery Loss

.)(max

µ

150

=

∫

0

FactorK =

()

Fig. 1

s

dtiQ

.

rrrr

t

1

t

2

RWTfEW ⋅−=⋅= 125 and

thJKAVKPAV

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:

)()(

where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.

= d.c. thermal resistance (°C/W).

R

thJK

The total dissipation is now given by:

fEWW

(original)(TOT)

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1 Page 4 of 12 March, 2007

⋅+=

()

RfkETT ⋅+⋅−=

thJKoriginalKnewK