Westcode Semiconductors R3559TC16x, R3559TC20x Data Sheet
Date:- 26 Jun, 2001
WESTCODE
Provisional Data
Distributed Gate Thyristor
Types R3559TC16x to R3559TC20x
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage 1600-2000 V
Non-repetitive peak off-state voltage 1600-2000 V
Repetitive peak reverse voltage 1600-2000 V
Non-repetitive peak reverse voltage 1700-2100 V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
t capacity for fusing tp=10ms, V
I
Maximum rate of rise of on-state current (repetitive) (Note 6) 500 A/µs
Maximum rate of rise of on-state current (non-repetitive) (Note 6) 1000 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 4 W
Peak forward gate power 50 W
Non-trigger gate voltage (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
(Note 1)
=55°C (note 2) 3559 A
sink
=85°C (note 2) 2421 A
sink
=85°C (note 3) 1447 A
sink
=25°C (note 2) 7060 A
sink
=25°C (note 4) 6038 A
sink
(note 5) 38.9 kA
RRM
≤
10V (note 5)
RM
(note 5) 7.57×10
RRM
≤
10V (note 5)
RM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
42.7 kA
6
9.12×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 1 of 12 June, 2001
DRM
, IFG=2A, t
DRM
.
≤
0.5µs, T
r
case
=125°C.
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)
Positive development in power electronics
Characteristics
R3559TC16x to R3559TC20x
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
Maximum peak on-state voltage - - 1.95 ITM=5000A V
TM
V
Threshold voltage - - 1.173 V
0
r
Slope resistance - - 0.155
S
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I
Peak off-state current - 60 300 Rated V
DRM
I
Peak reverse current - - 300 Rated V
RRM
V
Gate trigger voltage - - 3.0 V
GT
I
Gate trigger current - - 600
GT
I
Holding current - - 1000 Tj=25°C mA
H
t
Gate-controlled turn-on delay time - 0.8 1.5
gd
t
Turn-on time - 1.0 2.0
gt
Q
Recovered charge - 1750 - µC
rr
Q
Recovered charge, 50% Chord - 750 1500 µC
ra
I
Reverse recovery current - 220 - A
rm
t
Reverse recovery time, 50% chord - 7.5 -
rr
- - 140
t
Turn-off time
q
60 - 200
R
Thermal resistance, junction to heatsink
th(j-hs
- - 0.008 Double side cooled K/W
- - 0.016 Single side cooled K/W
=25°C VD=10V, IT=3A
T
j
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
I
=4000A, tp=2000µs, di/dt=60A/µs,
TM
V
=100V
r
ITM=4000A, tp=2000µs, di/dt=60A/µs,
V
=100V, Vdr=67%V
r
ITM=4000A, tp=2000µs, di/dt=60A/µs,
V
=100V, Vdr=67%V
r
, linear ramp
DRM
DRM
RRM
, IT=2000A, di/dt=60A/µs,
DRM
(Note 1)
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
mA
µs
µs
µs
F Mounting force 63 - 77 kN
W
Weight - 1.23 - kg
t
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
2)
for details of t
codes.
q
Introduction
The R3559TC16x-20x Distributed Gate thyristor range features regenerative and interdigitated gating on a
fully floating silicon slice (manufacturing reference RTLXCH) mounted in a cold weld capsule.
These devices provide fast turn-on and turn-off characteristics and have low turn-on losses. Combined
with the large area silicon, they are therefore suitable for induction heating and other high current, medium
frequency applications.
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 2 of 12 June, 2001
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Positive development in power electronics
R3559TC16x to R3559TC20x
V
Voltage Grade
16 1600 1700 1040
18 1800 1900 1150
20 2000 2100 1250
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
DRM VDSM VRRM
V
V
RSM
V
V
D VR
DC V
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
1
=
max
f
++
ttt
vqpulse
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 3 of 12 June, 2001
WESTCODE
(
)
(
)
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
Positive development in power electronics
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
R3559TC16x to R3559TC20x
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
is based on a 150µs integration time.
(ii) Q
rr
i.e.
=
.)(max
150
∫
0
µ
s
rrrr
125
Fig. 1
.
dtiQ
⋅−=⋅=
RWT and fEW
()
−
HsJthAVSINKPAV
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
= d.c. thermal resistance (°C/W).
R
th(J-Hs)
Data Sheet. Types R3559TC16x to R3559TC20x Issue 2 Page 4 of 12 June, 2001
FactorK
=
2
t
⋅+⋅−=
RfkETT
()
)()(
−
HsJthoriginalSINKnewSINK
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