Date:- 11 Oct, 2001
WESTCODE
Distributed Gate Thyristor
Type R2714ZC16x to R2714ZC18x
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Repetitive peak off-state voltage, (note 1) 1600-1800 V
Non-repetitive peak off-state voltage, (note 1) 1600-1800 V
Repetitive peak reverse voltage, (note 1) 1600-1800 V
Non-repetitive peak reverse voltage, (note 1) 1700-1900 V
OTHER RATINGS
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
t capacity for fusing tp=10ms, V
I
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
=55°C, (note 2) 2714 A
sink
=85°C, (note 2) 1828 A
sink
=85°C, (note 3) 1078 A
sink
=25°C, (note 2) 5411 A
sink
=25°C, (note 4) 4561 A
sink
, (note 5) 35600 A
RRM
≤
10V, (note 5)
RM
, (note 5) 6.34×10
RRM
≤
10V, (note 5)
RM
Data Sheet Issue:- 1
MAXIMUM
LIMITS
MAXIMUM
LIMITS
39000 A
6
7.61×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 1 of 12 October, 2001
DRM
, IFG=2A, t
DRM
.
≤
0.5µs, T
r
case
=125°C.
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Characteristics
R2714ZC16x to R2714ZC18x
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
0
r
S
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I
DRM
I
RRM
V
GT
I
GT
I
H
t
gd
t
gt
Q
Q
I
rm
t
rr
t
q
R
th(j-hs)
Maximum peak on-state voltage - - 1.9 ITM=4000A V
Threshold voltage - - 1.25 V
Slope resistance - - 0.163
Peak off-state current - - 300 Rated V
Peak reverse current - - 300 Rated V
DRM
RRM
Gate trigger voltage - - 3.0 Tj=25°C V
Gate trigger current - - 300 Tj=25°C VD=10V, IT=3A mA
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 1.0 2.0
Turn-on time - 2.0 3.0
Recovered charge - 1400 - µC
rr
Recovered charge, 50% Chord - 700 920 µC
ra
Reverse recovery current - 190 - A
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
I
=4000A, tp=1000µs, di/dt=60A/µs,
TM
V
=50V
r
Reverse recovery time - 7.0 -
ITM=4000A, tp=1000µs, di/dt=60A/µs,
V
=50V, Vdr=33%V
r
ITM=4000A, tp=1000µs, di/dt=60A/µs,
V
=50V, Vdr=33%V
r
Turn-off time (note 2)
Thermal resistance, junction to heatsink
40 - 45
50 - 60
- - 0.011 Double side cooled K/W
- - 0.022 Single side cooled K/W
(Note 1)
, Linear ramp, Gate O/C
DRM
, ITM=1000A, di/dt=60A/µs,
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
µs
µs
µs
F Mounting force 27 - 47 kN
W
Weight - 1.7 - kg
t
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
The required tq (specified with dVdr/dt=200V/µs) is repres ented by an ‘x’ in the device part number. See ordering information
2)
for details of t
codes.
q
Introduction
The R2714 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. T hey are therefore suitable f or
medium current, medium frequency applications.
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 2 of 12 October, 2001
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
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R2714ZC16x to R2714ZC18x
V
Voltage Grade
16 1600 1700 1040
18 1800 1900 1150
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maxim um un-primed rate of rise of on-s tate current must not exceed 1500A/µs at any time dur ing
turn-on on a non-repetitive basis. For repetitive per formanc e, the on-state r ate of r ise of c urrent m ust not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequenc y is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
1
=
max
f
++
vqpulse
ttt
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 3 of 12 October, 2001
WESTCODE
(
)
(
)
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estim ation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
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be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
R2714ZC16x to R2714ZC18x
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
is based on a 150µs integration time.
(ii) Q
rr
i.e.
=
.)(max
150
∫
0
µ
s
rrrr
125
Fig. 1
.
dtiQ
⋅−=⋅=
RWT and fEW
()
−
HsJthAVSINKPAV
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature c an
then be evaluated from the following:
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
= d.c. thermal resistance (°C/W).
R
th(J-Hs)
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 4 of 12 October, 2001
FactorK
)()(
=
2
t
⋅+⋅−=
RfkETT
()
−
HsJthoriginalSINKnewSINK
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The total dissipation is now given by:
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
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(original)(TOT)
R2714ZC16x to R2714ZC18x
⋅+=
fEWW
() ( )
Where T
T
SINK (original)
A suitable R-C snubber network is connected across the thyristor to restrict the transient revers e voltage
to a peak value (V
67% of Grade, the reverse loss m ay be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1
This thyristor has a low reverse recovered c harge and peak reverse recovery current. W hen measuring
the charge care must be taken to ensure that:
R
- Reverse Recovery Loss by Measurement
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the m easuring os cilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The form ula used for the c alculation
of this snubber is shown below:
2
4
SINK (new)
V
⋅=
⋅
C
S
is the required maximum heat sink temperature and
is the heat sink temperature given with the frequency ratings.
) of 67% of the maximum grade. If a diff erent grade is being used or Vrm is other than
rm
r
di
dt
()
⋅⋅−=
fRETT
thoriginalSINKnewSINK
Where: Vr= Commutating source voltage
C
= Snubber capacitance
S
R = Snubber resistance
13.0 Gate Drive
The recomm ended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 5 of 12 October, 2001
WESTCODE
p
p
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
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R2714ZC16x to R2714ZC18x
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting sof tware, are given in this report for hot and cold characteristics
where possible. The resulting values f or V
which is limited to that plotted.
14.2 D.C. Thermal Impedance Calculation
given below:
T
vs VT, on page 7 is represented in two ways;
T
and rs tangent used for rating purposes and
o
()
ln
agree with the true device characteristic over a curr ent range,
T
125°C Coefficients
A 1.96505549
B -0.1486497
1
-4
−
t
τ
p
−⋅=
err
C 1.1399×10
D 0.0112558
=
np
∑
pt
=
p
1
in
T
⋅+⋅+⋅+=
IDICIBAV
TTTT
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
= Thermal resistance at time t.
r
t
r
= Amplitude of pth term.
τ
= Time Constant of rth term.
D.C. Single Side Cooled
Term123456
r
p
τ
p
Term1234
r
p
τ
p
1.42×10
-2
2.34×10
9.25 2.07957 0.23675 0.07935 0.0107 2.89×10
5.60×10
1.593884 0.28583 0.07721 4.84×10
-3
3.39×10
D.C. Double Side Cooled
-3
2.81×10
-3
8.87×10
-3
-4
1.42×10
6.00×10
-3
-4
4.66×10
9.34×10
-4
-3
-4
-3
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 6 of 12 October, 2001
WESTCODE
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R2714ZC16x to R2714ZC18x
Curves
Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance
10000
0.1
Tj = 125°C
(A)
T
1000
Instantaneous on-state current - I
R2714ZC16x - 18x
100
1.2 1.4 1.6 1.8 2 2.2
Instantaneous on-state voltage - V
Issue 1
(V)
T
0.01
(K/W)
(th)t
0.001
Transient Thermal Impedance - Z
0.0001
0.00001
0.0001 0.001 0.01 0.1 1 10 100
Time (s)
SSC 0.022K/W
DSC 0.011K/W
R2714ZC16x - 18x
Issue 1
Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves
10
R2714ZC16x - 18x
Tj=25°C
9
Issue 1
20
R2714ZC16x - 18x
Tj=25°C
18
Issue 1
`
8
7
(V)
GT
6
5
IGT, V
4
Gate Trigger Voltage - V
3
2
1
IGD, V
GD
0
0 0.2 0.4 0.6 0.8 1
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 7 of 12 October, 2001
Max VG dc
GT
125°C
Gate Trigger Current - I
25°C
-10°C
-40°C
Min VG dc
(A)
GT
16
Max VG dc
14
(V)
GT
12
10
8
Gate Trigger Voltage - V
6
PG 5W dc
4
2
0
0246810
Gate Trigger Current - I
PG Max 30W dc
Min VG dc
(A)
GT
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R2714ZC16x to R2714ZC18x
Figure 5 - Total recovered charge, Q
10000
(µC)
rr
1000
Total recovered charge - Q
R2714ZC16x - 18x
100
10 100 1000
Commutation rate - di/dt (A/µs)
rr
4kA
2kA
1kA
500A
Tj = 125°C
Issue 1
Figure 6 - Recovered charge, Qra (50% chord)
10000
4kA
(µC)
ra
1000
Recovered charge - Q
100
10 100 1000
Commutation rate - di/dt (A/µs)
2kA
1kA
500A
Tj = 125°C
R2714ZC16x - 18x
Issue 1
Figure 7 - Peak reverse recovery current, I
1000
4kA
2kA
1kA
500A
(A)
rm
100
Reverse recovery current - I
Tj = 125°C
R2714ZC16x - 18x
10
10 100 1000
Commutation rate - di/dt (A/µs)
Issue 1
rm
Figure 8 - Maximum recovery time, trr (50% chord)
100
R2714ZC16x - 18x
Issue 1
Tj = 125°C
(µs)
rr
10
4kA
Reverse recovery time - t
1
10 100 1000
Commutation rate - di/dt (A/µs)
2kA
1kA
500A
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 8 of 12 October, 2001
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R2714ZC16x to R2714ZC18x
Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse
10
4000A
3000A
1.00E+03
1.00E+02
R2714ZC16x - 18x
Issue 1
Tj=125°C
(J)
r
1
Energy per pulse - E
0.1
10 100 1000
Commutation rate - di/dt (A/µs)
2000A
1000A
Snubber
0.25µF, 5
Tj = 125°C
Vrm =0.67%V
R2714ZC16x - 18x
Issue 1
Ω
DRM
1.00E+01
8kA
6kA
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
4kA
2kA
1kA
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+04
2kA
4kA
R2714ZC16x - 18x
100% Duty Cycle
Issue 1
THs=55°C
1.00E+05
1kA
100% Duty Cycle
2kA
1.00E+04
6kA
8kA
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse Width (s)
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 9 of 12 October, 2001
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
4kA
6kA
8kA
THs=85°C
R2714ZC16x - 18x
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
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R2714ZC16x to R2714ZC18x
Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
1kA
2kA
1.00E+04
4kA
6kA
1.00E+03
Frequency (Hz)
1.00E+02
THs=55°C
di/dt=100A/µs
R2714ZC16x - 18x
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Issue 1
100% Duty Cycle
8kA
Pulse width (s)
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
2kA
4kA
6kA
8kA
THs=55°C
di/dt=500A/µs
R2714ZC16x - 18x
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
2kA
4kA
THs=85°C
di/dt=100A/µs
R2714ZC16x - 18x
Issue 1
100% Duty Cycle
6A
8kA
Pulse width (s)
1kA
1.00E+04
2kA
4kA
6kA
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
8kA
THs=85°C
di/dt=500A/µs
R2714ZC16x - 18x
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 10 of 12 October, 2001
WESTCODE
Positive development in power electronics
R2714ZC16x to R2714ZC18x
Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse
1.00E+03
1.00E+02
R2714ZC16x - 18x
Issue 1
di/dt=100A/µs
Tj=125°C
1.00E+03
1.00E+02
R2714ZC16x - 18x
Issue 1
di/dt=500A/µs
Tj=125°C
1.00E+01
8kA
6kA
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
1.00E-05 1.00E-04 1.00E-03 1.00E-02
4kA
2kA
1kA
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
(A)
TSM
8kA
6kA
1.00E+01
Energy per pulse (J)
1.00E+00
1.00E-01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
RRM
≤
10V
RRM
I2t: V
I2t: 60% V
4kA
2kA
1kA
1.00E+08
2
: V
RRM
: 60% V
≤
10V
RRM
2
1.00E+07
10000
Total peak half sine surge current - I
Tj (initial) = 125°C
I
TSM
I
TSM
R2714ZC16x - 18x
Issue 1
1000
1.00E+06
135101 510 50100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 11 of 12 October, 2001
s)
t (A
Maximum I
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Outline Drawing & Ordering Information
R2714ZC16x to R2714ZC18x
ORDERING INFORMATION
R2714 ZC
Fixed
Type Code
Outline Code
Fixed
(Please quote 10 digit code as bel ow)
♦ ♦
♦ ♦ ♦♦♦♦
♦ ♦♦ ♦
Fixed Voltage Code
V
/100
DRM
16-18
Typical order code: R2714ZC18K – 1800V V
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior
notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessaril y subject
to the conditions and limits contained in this report.
, 60µs tq, 37.7mm clamp height capsule.
DRM
t
Code
q
H=40µs, J=50µs, K =60µs
© Westcode Semiconductors Ltd.
Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 12 of 12 October, 2001
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