Westcode Semiconductors R2714ZC16x, R2714ZC18x Data Sheet

Date:- 11 Oct, 2001

WESTCODE

Distributed Gate Thyristor

Type R2714ZC16x to R2714ZC18x

Absolute Maximum Ratings

VOLTAGE RATINGS

V

DRM

V

DSM

V

RRM

V

RSM

I

T(AV)

I

T(AV)

I

T(AV)

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2tI
I2t

diT/dt

V

RGM

P

G(AV)

P

GM

V

GD

T

HS

T

stg

Repetitive peak off-state voltage, (note 1) 1600-1800 V
Non-repetitive peak off-state voltage, (note 1) 1600-1800 V
Repetitive peak reverse voltage, (note 1) 1600-1800 V
Non-repetitive peak reverse voltage, (note 1) 1700-1900 V

OTHER RATINGS

Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V

2

t capacity for fusing tp=10ms, VRM=0.6V

2

t capacity for fusing tp=10ms, V

I
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C

=55°C, (note 2) 2714 A

sink

=85°C, (note 2) 1828 A

sink

=85°C, (note 3) 1078 A

sink

=25°C, (note 2) 5411 A

sink

=25°C, (note 4) 4561 A

sink

, (note 5) 35600 A

RRM

≤

10V, (note 5)

RM

, (note 5) 6.34×10

RRM

≤

10V, (note 5)

RM

Data Sheet Issue:- 1

MAXIMUM

LIMITS

MAXIMUM

LIMITS

39000 A

6

7.61×10

6

UNITS

UNITS

A2s
A2s

Notes:-

1)

De-rating factor of 0.13% per °C is applicable for Tj below 25°C.

2)

Double side cooled, single phase; 50Hz, 180° half-sinewave.

3)

Single side cooled, single phase; 50Hz, 180° half-sinewave.

4)

Double side cooled.

5)

Half-sinewave, 125°C Tj initial.

6)

VD=67% V

7)

Rated V

Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 1 of 12 October, 2001

DRM

, IFG=2A, t

DRM

.

≤

0.5µs, T

r

case

=125°C.

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Characteristics

R2714ZC16x to R2714ZC18x

PARAMETER MIN. TYP. MAX. TEST CONDITIONS

V

TM

V

0

r

S

dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I

DRM

I

RRM

V

GT

I

GT

I

H

t

gd

t

gt

Q
Q
I

rm

t

rr

t

q

R

th(j-hs)

Maximum peak on-state voltage - - 1.9 ITM=4000A V
Threshold voltage - - 1.25 V
Slope resistance - - 0.163

Peak off-state current - - 300 Rated V
Peak reverse current - - 300 Rated V

DRM

RRM

Gate trigger voltage - - 3.0 Tj=25°C V
Gate trigger current - - 300 Tj=25°C VD=10V, IT=3A mA
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 1.0 2.0
Turn-on time - 2.0 3.0
Recovered charge - 1400 - µC

rr

Recovered charge, 50% Chord - 700 920 µC

ra

Reverse recovery current - 190 - A

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

I

=4000A, tp=1000µs, di/dt=60A/µs,

TM

V

=50V

r

Reverse recovery time - 7.0 -

ITM=4000A, tp=1000µs, di/dt=60A/µs,
V

=50V, Vdr=33%V

r

ITM=4000A, tp=1000µs, di/dt=60A/µs,
V

=50V, Vdr=33%V

r

Turn-off time (note 2)

Thermal resistance, junction to heatsink

40 - 45
50 - 60

- - 0.011 Double side cooled K/W

- - 0.022 Single side cooled K/W

(Note 1)

, Linear ramp, Gate O/C

DRM

, ITM=1000A, di/dt=60A/µs,

DRM

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

UNITS

m

V/µs

mA
mA

µs

µs

µs

F Mounting force 27 - 47 kN
W

Weight - 1.7 - kg

t

Ω

Notes:-

Unless otherwise indicated Tj=125°C.

1)

The required tq (specified with dVdr/dt=200V/µs) is repres ented by an ‘x’ in the device part number. See ordering information

2)

for details of t

codes.

q

Introduction

The R2714 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. T hey are therefore suitable f or
medium current, medium frequency applications.

Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 2 of 12 October, 2001

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

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R2714ZC16x to R2714ZC18x

V

Voltage Grade

16 1600 1700 1040
18 1800 1900 1150

2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

6.0 Rate of rise of on-state current
The maxim um un-primed rate of rise of on-s tate current must not exceed 1500A/µs at any time dur ing

turn-on on a non-repetitive basis. For repetitive per formanc e, the on-state r ate of r ise of c urrent m ust not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

DRM VDSM VRRM

V

V

RSM

V

V

V

D

DC V

R

7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency
The maximum operating frequenc y is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

1

=

max

f

++

vqpulse

ttt

Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 3 of 12 October, 2001

WESTCODE

(

)

(

)

10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estim ation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Then the average dissipation will be:

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be the Energy per pulse for a given current and pulse width, in joules

Let E

p

Let R
and T

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

R2714ZC16x to R2714ZC18x

11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.

is based on a 150µs integration time.

(ii) Q

rr

i.e.

=

.)(max

150

∫

0

µ

s

rrrr

125

Fig. 1

.

dtiQ

⋅−=⋅=

RWT and fEW

()

−

HsJthAVSINKPAV

1

t

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature c an
then be evaluated from the following:

Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

= d.c. thermal resistance (°C/W).

R

th(J-Hs)

Data Sheet. Type R2714ZC16x to R2714ZC18x Issue 1 Page 4 of 12 October, 2001

FactorK

)()(

=

2

t

⋅+⋅−=

RfkETT

()

−

HsJthoriginalSINKnewSINK