Westcode Semiconductors R2075MC12x Data Sheet

Distributed Gate Thyristor

Type R2075MC12x

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

OTHER RATINGS

I

T(AVM)

I

T(AVM)

I

T(AVM)

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2t I2t capacity for fusing tp=10ms, Vrm=0.6V
I2t

(di/dt)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1200 V
Non-repetitive peak off-state voltage, (note 1) 1200 V
Repetitive peak reverse voltage, (note 1) 1200 V
Non-repetitive peak reverse voltage, (note 1) 1300 V

Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T

=25°C, (note 4) 3405 A

sink

Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

2

I

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs

cr

Critical rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
Peak forward gate power 30 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C

initial.

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

j

=125°C.

case

=55°C, (note 2) 2075 A

sink

=85°C, (note 2) 1365 A

sink

=85°C, (note 3) 720 A

sink

=25°C, (note 2) 4200 A

sink

, (note 5) 29.0 kA

RRM

, (note 5) 4.21×10

RRM

below 25°C.

j

Date:- 13

th

December 2014

Data Sheet Issue:- A2

MAXIMUM

LIMITS

MAXIMUM

LIMITS

31.9 kA

6

5.09×10

6

UNITS

UNITS

A2s
A2s

Data Sheet. Type R2075MC12x Issue A2 Page 1 of 13 December 2014

Distributed Gate Thyristor type R2075MC12x

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

TM

V

TM

V

T0

r

T

(dv/dt)crCritical rate of rise of off-state voltage 200 - - VD=80% V
I

DRM

I

RRM

V

GT

I

GT

V

GD

I

H

t

gd

t

gt

Q

rr

Q

ra

I

rm

t

rr

t

q

Maximum peak on-state voltage - - 1.90 ITM=2200A V
Maximum peak on-state voltage - - 2.42 ITM=6200A V
Threshold voltage - - 1.390 V
Slope resistance - - 0.167

, Linear ramp, Gate o/c

DRM

Peak off-state current - - 100 Rated V
Peak reverse current - - 100 Rated V
Gate trigger voltage - - 3.0 V

T

Gate trigger current - - 300
Gate non-trigger voltage - - 0.25 Rated V

DRM

RRM

=25°C VD=10V, IT=3A

j

DRM

mΩ

V/µs

mA
mA

mA

V
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 0.5 1.0
Turn-on time - 0.8 1.6

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

, ITM=1000A, di/dt=60A/µs,

DRM

µs

Recovered charge - 230 300 µC
Recovered charge, 50% Chord - 120 - µC
Reverse recovery current - 95 - A
Reverse recovery time - 2.3 -

- 10 -

Turn-off time (note 2)

- 12 -

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V

r

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, Vdr=33%V

r

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, Vdr=33%V

r

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

µs

µs

- - 0.015 Double side cooled K/W

R

thJK

Thermal resistance, junction to heatsink

- - 0.028 Anode side cooled K/W

- - 0.033 Cathode side cooled K/W
F Mounting force 19 - 26 kN
W

t

Weight - 510 - g

Notes:-

1) Unless otherwise indicated T

2)

The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of t

codes.

q

=125°C.

j

Data Sheet. Type R2075MC12x Issue A2 Page 2 of 13 December 2014

Distributed Gate Thyristor type R2075MC12x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

V

V

D

DC V

R

12 1200 1300 810

2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time
This Report is applicable to other t

/re-applied dv/dt combinations when supply has been agreed by

q

Sales/Production.

4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.

j

6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of I
(t

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

p1

should be between five and ten times IGT, which is shown on page 2. Its duration

GM

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

should remain flowing for the same duration as the anode current and have a

G

.

GT

Data Sheet. Type R2075MC12x Issue A2 Page 3 of 13 December 2014

Distributed Gate Thyristor type R2075MC12x

(

)

⋅−=

9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum

ratings shown on page 1.

10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

f

13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.
Let E

Let R
and T

Then the average dissipation will be:

max

=

be the Energy per pulse for a given current and pulse width, in joules

p

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

1

vqpulse ttt

++

⋅= 125

14.0 Reverse recovery ratings
(i) Q

is based on 50% Irm chord as shown in Fig. 1

ra

is based on a 50µs integration time i.e.

(ii) Q

rr

(iii)

RWT and fEW

()

.)(max

−

HsJthAVSINKPAV

Fig. 1

s

µ

150

=

rrrr

∫

0

FactorK =

dtiQ

.

1

t

2

t

Data Sheet. Type R2075MC12x Issue A2 Page 4 of 13 December 2014