Date:- 01 August 2012
2
Data Sheet Issue:- 2
Distributed Gate Thyristor
Type R1331NC10x to R1331NC12x
Absolute Maximum Ratings
V
DRM
V
DSM
V
RRM
V
RSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) 1000-1200 V
Non-repetitive peak off-state voltage, (note 1) 1000-1200 V
Repetitive peak reverse voltage, (note 1) 1000-1200 V
Non-repetitive peak reverse voltage, (note 1) 1100-1300 V
OTHER RATINGS
I
Maximum average on-state current, T
T(AVM)
I
Maximum average on-state current. T
T(AVM)
I
Maximum average on-state current. T
T(AVM)
I
Nominal RMS on-state current, T
T(RMS)
I
D.C. on-state current, T
T(d.c.)
I
Peak non-repetitive surge tp=10ms, Vrm=0.6V
TSM
I
TSM2
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
=25°C, (note 4) 2191 A
sink
I2t I2t capacity for fusing tp=10ms, Vrm=0.6V
I2t
(di/dt)cr
V
RGM
P
G(AV)
2
I
t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Critical rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
=55°C, (note 2) 1331 A
sink
=85°C, (note 2) 878 A
sink
=85°C, (note 3) 503 A
sink
=25°C, (note 2) 2687 A
sink
, (note 5) 18.2 kA
RRM
, (note 5) 1.66×106 A
RRM
PGM Peak forward gate power 30 W
T
Operating temperature range -40 to +125 °C
j op
T
Storage temperature range -40 to +150 °C
stg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
, IFG=2A, tr≤0.5µs, T
DRM
initial.
j
=125°C.
case
below 25°C.
j
MAXIMUM
LIMITS
MAXIMUM
LIMITS
UNITS
UNITS
20.0 kA
6
2.0×10
A
s
2
s
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 1 of 12 August 2012
Distributed Gate Thyristor types R1331NC10x to R1331NC12x
r
r
r
r
r
r
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
VTM Maximum peak on-state voltage - - 2.02 ITM=2000A V
VTM Maximum peak on-state voltage - - 2.5 ITM=3900A V
VT0 Threshold voltage - - 1.45 V
rT Slope resistance - - 0.285
(dv/dt)cr Critical rate of rise of off-state voltage 200 - - VD=80% V
I
Peak off-state current - - 150 Rated V
DRM
I
Peak reverse current - - 150 Rated V
RRM
VGT Gate trigger voltage - - 3.0
IGT Gate trigger current - - 300 mA
=25°C VD=10V, IT=3A
T
j
VGD Gate non-trigger voltage - - 0.25 Rated V
, Linear ramp, Gate o/c
DRM
mA
DRM
mA
RRM
V
DRM
IH Holding current - - 1000 Tj=25°C mA
tgd Gate controlled turn-on delay time - 0.5 1.0
tgt Turn-on time - 1.0 2.0
V
=67% V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
, ITM=1000A, di/dt=60A/µs,
DRM
Qrr Recovered charge - 200 Qra Recovered charge, 50% Chord - 80 100 µC
Irm Reverse recovery current - 70 - A
t
rr
Reverse recovery time - 2.2 - µs
- 10 15
tq Turn-off time (note 2)
- 15 20
R
thJK
Thermal resistance, junction to heatsink
- - 0.022 Double side cooled K/W
- - 0.044 Single side cooled K/W
I
=1000A, tp=1000µs, di/dt=60A/µs,
TM
V
=50V
r
=1000A, tp=1000µs, di/dt=60A/µs,
I
TM
V
=50V, V
=1000A, tp=1000µs, di/dt=60A/µs,
I
TM
V
=50V, V
=33%V
d
=33%V
d
DRM
DRM
, dV
/dt=20V/µs
d
, dV
/dt=200V/µs
d
F Mounting force 19 - 26 kN
Wt Weight - 510 - g
mΩ
V/µs
V
µs
µC
µs
Notes:-
1) Unless otherwise indicated T
2)
The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of t
codes.
q
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 2 of 12 August 2012
=125°C.
j
Distributed Gate Thyristor types R1331NC10x to R1331NC12x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
VD VR
DC V
10 1000 1100 700
12 1200 1300 810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other t
/re-applied dv/dt combinations when supply has been agreed by
q
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
below 25°C.
j
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
(t
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
p1
should be between five and ten times IGT, which is shown on page 2. Its duration
GM
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
.
GT
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 3 of 12 August 2012
Distributed Gate Thyristor types R1331NC10x to R1331NC12x
(
)
⋅−=
9.0 Frequency Ratings
The curves illustrated in figures X to Y are for guidance only and are superseded by the maximum ratings
shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(t
) and for the off-state voltage to reach full value (tv), i.e.
q
f
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let E
Let R
and T
Then the average dissipation will be:
max
=
be the Energy per pulse for a given current and pulse width, in joules
p
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
1
vqpulse ttt
++
⋅= 125
14.0 Reverse recovery ratings
is based on 50% Irm chord as shown in Fig. 1
(i) Q
ra
(ii) Qrr is based on a 150µs integration time i.e.
(iii)
.)(max
RWT and fEW
()
HsJthAVSINKPAV
−
Fig. 1
=
FactorK =
150
s
µ
dtiQ
.
rrrr
∫
0
1
t
2
t
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 4 of 12 August 2012
Distributed Gate Thyristor types R1331NC10x to R1331NC12x
(
)
⋅+⋅
⋅
(
⋅
⋅
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
−=
)()(
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R
The total dissipation is now given by:
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
() ( )
Where T
T
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
= d.c. thermal resistance (°C/W).
th(J-Hs)
+=
SINK (new)
SINK (original)
(original)(TOT)
is the required maximum heat sink temperature and
is the heat sink temperature given with the frequency ratings.
) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
rm
fEWW
−=
RfkETT
()
−
)
fRETT
thoriginalSINKnewSINK
HsJthoriginalSINKnewSINK
=
2
R
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 5 of 12 August 2012
V
C
r
di
⋅
dt
S
Where:
⋅= 4
V
C
R
r
S
Commutating source voltage
=
Snubber capacitance
=
Snubber resistance
Distributed Gate Thyristor types R1331NC10x to R1331NC12x
(
p
p
16.0 Computer Modelling Parameters
16.1 Calculating V
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
using ABCD Coefficients
T
vs VT, on page 7 is represented in two ways;
T
and rT tangent used for rating purposes and
T0
given below:
T
in
T
)
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for V
which is limited to that plotted.
16.2 D.C. Thermal Impedance Calculation
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
= Thermal resistance at time t.
r
t
r
= Amplitude of pth term.
= Time Constant of r
τ
Term 1 2 3 4 5
rp
τ
p
Term 1 2 3 4
rp
τ
p
0.0291698 4.295845×10
5.67822 1.123602 0.1407857 0.014381914 1.272749×10
0.01177146 6.485814×10
0.9495346 0.1337950 0.01636628 1.255571×10
term.
th
agree with the true device characteristic over a current range,
T
125°C Coefficients
A 1.40054285
B 0.198521
C 6.08×10-4
D -0.04708
−
=
np
⎛
⎜
∑
=
p
1
D.C. Single Side Cooled
-3
7.57109×10-3 2.195801×10-3 1.628753×10-3
D.C. Double Side Cooled
1
pt
⎜
⎝
-3
2.471007×10-3 1.607109×10-3
t
⎞
τ
p
⎟
err
−⋅=
⎟
⎠
IDICIBAV ⋅+⋅+⋅+= ln
TTTT
-3
-3
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 6 of 12 August 2012
Distributed Gate Thyristor types R1331NC10x to R1331NC12x
Curves
Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance
(A)
T
10000
Tj = 125°C
1000
(K/W)
0.01
(th)t
0.1
SSC 0.044K/W
DSC 0.022K/W
Instantaneous on-state current - I
R1331NC10x-12x
100
11.522.533.54
Instantaneous on-state voltage - V
Issue 2
(V)
T
Figure 3 - Gate characteristics - Trigger limits
6
R1331NC10x-12x
Issue 2
Tj=25°C
5
4
(V)
GT
IGT, V
3
Gate Trigger Voltage - V
2
Max VG dc
GT
0.001
Transient Thermal Impedance - Z
R1331NC10x-12x
0.0001
0.0001 0.001 0.01 0.1 1 10 100
Figure 4 - Gate characteristics - Power curves
20
R1331NC10x-12x
Issue 2
Tj=25°C
18
16
14
(V)
GT
12
10
Max VG dc
Time (s)
Issue 2
8
Gate Trigger Voltage - V
6
PG Max 30W dc
`
25°C
125°C
1
IGD, V
GD
0
0 0.25 0.5 0.75 1
Gate Trigger Current - I
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 7 of 12 August 2012
-10°C
GT
-40°C
(A)
Min VG dc
4
2
0
0246810
PG 5W dc
Gate Trigger Current - I
(A)
GT
Min VG dc
r
r
Figure 5 - Total recovered charge, Q
1000
Distributed Gate Thyristor types R1331NC10x to R1331NC12x
Figure 6 - Recovered charge, Qra (50% chord)
r
1000
2000A
1500A
(µC)
rr
1000A
500A
Total recovered charge - Q
Tj = 125°C
R1331NC10x-12x
Issue 2
100
10 100 1000
Commutation rate - di/dt (A/µs)
Figure 7 - Peak reverse recovery current, Irm
1000
(µC)
ra
100
Recovered charge - Q
10
10 100 1000
Commutation rate - di/dt (A/µs)
Figure 8 - Maximum recovery time, t
10
2000A
1500A
1000A
500A
Tj = 125°C
R1331NC10x-12x
Issue 2
(50% chord)
r
2000A
1500A
1000A
500A
(A)
rm
(µs)
rr
100
Reverse recovery current - I
R1331NC10x-12x
10
10 100 1000
Commutation rate - di/dt (A/µs)
Tj = 125°C
Issue 2
Reverse recovery time - t
Tj = 125°C
R1331NC10x-12x
Issue 2
1
10 100 1000
Commutation rate - di/dt (A/µs)
2000A
1500A
1000A
500A
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 8 of 12 August 2012
Distributed Gate Thyristor types R1331NC10x to R1331NC12x
A
A
A
A
Figure 9 – Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse
1000
(mJ)
r
100
Energy per pulse - E
No Snubber:
Vrm = 67% V
R1331NC10x-12x
10
10 100 1000
Commutation rate - di/dt (A/µs)
2000
1500
1000
500
Tj = 125°C
RRM
Issue 2
1.00E+02
1.00E+01
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
R1331NC10x-12x
Issue 2
Tj=125°C
5kA
3kA
2kA
1kA
500A
250A
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 11 - Sine wave frequency ratings
1.00E+05
500A
100% Duty Cycle
1kA
1.00E+04
2kA
3kA
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
5kA
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse Width (s)
R1331NC10x-12x
Issue 2
THs=55°C
Figure 12 - Sine wave frequency ratings
1.00E+05
500A
1kA
1.00E+04
2kA
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
3kA
5kA
THs=85°C
R1331NC10x-12x
Issue 2
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 9 of 12 August 2012
Distributed Gate Thyristor types R1331NC10x to R1331NC12x
Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings
1.00E+05
500A
1.00E+05
1kA
1.00E+04
2kA
3kA
1.00E+03
Frequency (Hz)
1.00E+02
THs=55°C
di/dt=100A/µs
R1331NC10x-12x
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
5kA
Issue 2
100% Duty Cycle
Pulse width (s)
100% Duty Cycle
1.00E+04
1.00E+03
500A
1kA
2kA
3kA
Frequency (Hz)
1.00E+02
1.00E+01
5kA
THs=55°C
di/dt=500A/µs
R1331NC10x-12x
Issue 2
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+05
250A
500A
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1kA
2kA
3kA
5kA
THs=85°C
di/dt=100A/µs
R1331NC10x-12x
Issue 2
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
500A
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
1kA
2kA
3kA
5kA
THs=85°C
di/dt=500A/µs
R1331NC10x-12x
Issue 2
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 10 of 12 August 2012
Distributed Gate Thyristor types R1331NC10x to R1331NC12x
Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse
1.00E+03
R1331NC10x-12x
Issue 2
di/dt=100A/µs
Tj=125°C
1.00E+03
R1331NC10x-12x
Issue 2
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+01
5kA
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
1.00E-05 1.00E-04 1.00E-03 1.00E-02
3kA
2kA
1kA
500A
250A
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
1.00E+02
5kA
3kA
2kA
1.00E+01
1.00E+00
Energy per pulse (J)
1kA
500A
1.00E-01
1.00E-02
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
250A
1.00E+08
(A)
TSM
I2t: V
I2t: 60% V
RRM
≤10V
RRM
1.00E+07
2
2
s)
t (A
10000
I
: V
RRM
: 60% V
≤10V
RRM
1.00E+06
Maximum I
Total peak half sine surge current - I
Tj (initial) = 125°C
TSM
I
TSM
R1331NC10x-12x
Issue 2
1000
1.00E+05
135101 510 50100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 11 of 12 August 2012
Outline Drawing & Ordering Information
Distributed Gate Thyristor types R1331NC10x to R1331NC12x
101A223
ORDERING INFORMATION (Please quote 10 digit code as below)
R1331 NC
Fixed
Type Code
Typical order code: R1331NC10B – 1000V V
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Fixed
Outline Code
, 12µs tq, 27.7mm clamp height capsule.
DRM
♦ ♦ #
Fixed Voltage Code
V
/100
DRM
10-12
t
Code
A=10µs, B=12µs, C=15µs,
q
D=20µs
© IXYS UK Westcode Ltd.
Data Sheet. Type R1331NC10x to R1331NC12x Issue 2 Page 12 of 12 August 2012
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