Westcode Semiconductors R1279NC22x, R1279NC25x Data Sheet

Date:- 01 August 2012

2

Data Sheet Issue:- 2

Distributed Gate Thyristor

Type R1279NC22x to R1279NC25x

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 2200-2500 V
Non-repetitive peak off-state voltage, (note 1) 2200-2500 V
Repetitive peak reverse voltage, (note 1) 2200-2500 V
Non-repetitive peak reverse voltage, (note 1) 2300-2600 V

OTHER RATINGS

I

Maximum average on-state current, T

T(AVM)

I

Maximum average on-state current. T

T(AVM)

I

Maximum average on-state current. T

T(AVM)

I

Nominal RMS on-state current, T

T(RMS)

I

D.C. on-state current, T

T(d.c.)

I

Peak non-repetitive surge tp=10ms, Vrm=0.6V

TSM

I

TSM2

Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

=25°C, (note 4) 2123 A

sink

I2t I2t capacity for fusing tp=10ms, Vrm=0.6V
I2t

(di/dt)cr

V

RGM

P

G(AV)

2

I

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Critical rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs

Peak reverse gate voltage 5 V

Mean forward gate power 5 W

=55°C, (note 2) 1279 A

sink

=85°C, (note 2) 851 A

sink

=85°C, (note 3) 493 A

sink

=25°C, (note 2) 2571 A

sink

, (note 5) 14.8 kA

RRM

, (note 5) 1.10×106 A

RRM

PGM Peak forward gate power 30 W
T

Operating temperature range -40 to +125 °C

j op

T

Storage temperature range -40 to +150 °C

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

initial.

j

=125°C.

case

below 25°C.

j

MAXIMUM

LIMITS

MAXIMUM

LIMITS

UNITS

UNITS

16.3 kA

6

1.33×10

A

s

2

s

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 1 of 12 August 2012

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

r

r

r

r

r

r

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

VTM Maximum peak on-state voltage - - 2.1 ITM=2000A V
VTM Maximum peak on-state voltage - - 2.65 ITM=3900A V
VT0 Threshold voltage - - 1.44 V
rT Slope resistance - - 0.33
(dv/dt)cr Critical rate of rise of off-state voltage 200 - - VD=80% V
I

Peak off-state current - - 150 Rated V

DRM

I

Peak reverse current - - 150 Rated V

RRM

VGT Gate trigger voltage - - 3.0
IGT Gate trigger current - - 300 mA

=25°C VD=10V, IT=3A

T

j

VGD Gate non-trigger voltage - - 0.25 Rated V

, Linear ramp, Gate o/c

DRM

mA

DRM

mA

RRM

V

DRM

IH Holding current - - 1000 Tj=25°C mA
tgd Gate controlled turn-on delay time - 0.5 1.0
tgt Turn-on time - 1.0 2.0

V

=67% V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

, ITM=1000A, di/dt=60A/µs,

DRM

Qrr Recovered charge - 1250 ­Qra Recovered charge, 50% Chord - 700 920 µC
Irm Reverse recovery current - 230 - A
t

rr

Reverse recovery time - 6.0 - µs

35 - 50

tq Turn-off time (note 2)

50 - 70

R

thJK

Thermal resistance, junction to heatsink

- - 0.022 Double side cooled K/W

- - 0.044 Single side cooled K/W

I

=1000A, tp=1000µs, di/dt=60A/µs,

TM

V

=50V

r

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, V

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, V

=33%V

d

=33%V

d

DRM

DRM

, dV

/dt=20V/µs

d

, dV

/dt=200V/µs

d

F Mounting force 19 - 26 kN
Wt Weight - 510 - g

mΩ

V/µs

V

µs

µC

µs

Notes:-

1) Unless otherwise indicated T

2)

The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of t

codes.

q

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 2 of 12 August 2012

=125°C.

j

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

VD VR

DC V
22 2200 2300 1350
24 2400 2500 1450
25 2500 2600 1500

2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time
This Report is applicable to other t

/re-applied dv/dt combinations when supply has been agreed by

q

Sales/Production.

4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.

j

6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of I
(t

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

p1

should be between five and ten times IGT, which is shown on page 2. Its duration

GM

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 3 of 12 August 2012

should remain flowing for the same duration as the anode current and have a

G

.

GT

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

(

)

⋅−=

9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum

ratings shown on page 1.

10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t

) and for the off-state voltage to reach full value (tv), i.e.

q

f

13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.
Let E

Let R
and T

Then the average dissipation will be:

max

=

be the Energy per pulse for a given current and pulse width, in joules

p

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

1

vqpulse ttt

++

⋅= 125

14.0 Reverse recovery ratings
is based on 50% Irm chord as shown in Fig. 1

(i) Q

ra

(ii) Qrr is based on a 150µs integration time i.e.

(iii)

.)(max

RWT and fEW

()

HsJthAVSINKPAV

−

Fig. 1

=

FactorK =

150

s

µ

dtiQ

.

rrrr

∫

0

1

t

2

t

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 4 of 12 August 2012