Westcode Semiconductors R1279NC22x, R1279NC25x Data Sheet

Date:- 01 August 2012

2

Data Sheet Issue:- 2

Distributed Gate Thyristor

Type R1279NC22x to R1279NC25x

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 2200-2500 V Non-repetitive peak off-state voltage, (note 1) 2200-2500 V Repetitive peak reverse voltage, (note 1) 2200-2500 V Non-repetitive peak reverse voltage, (note 1) 2300-2600 V

OTHER RATINGS

I

Maximum average on-state current, T

T(AVM)

I

Maximum average on-state current. T

T(AVM)

I

Maximum average on-state current. T

T(AVM)

I

Nominal RMS on-state current, T

T(RMS)

I

D.C. on-state current, T

T(d.c.)

I

Peak non-repetitive surge tp=10ms, Vrm=0.6V

TSM

I

TSM2

Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

=25°C, (note 4) 2123 A

sink

I2t I2t capacity for fusing tp=10ms, Vrm=0.6V I2t

(di/dt)cr

V

RGM

P

G(AV)

2

I

t capacity for fusing tp=10ms, Vrm≤10V, (note 5) Critical rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs Critical rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs

Peak reverse gate voltage 5 V

Mean forward gate power 5 W

=55°C, (note 2) 1279 A

sink

=85°C, (note 2) 851 A

sink

=85°C, (note 3) 493 A

sink

=25°C, (note 2) 2571 A

sink

, (note 5) 14.8 kA

RRM

, (note 5) 1.10×106 A

RRM

PGM Peak forward gate power 30 W T

Operating temperature range -40 to +125 °C

j op

T

Storage temperature range -40 to +150 °C

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

initial.

j

=125°C.

case

below 25°C.

j

MAXIMUM

LIMITS

MAXIMUM

LIMITS

UNITS

16.3 kA

6

1.33×10

A

s

2

s

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 1 of 12 August 2012

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

r

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

VTM Maximum peak on-state voltage - - 2.1 ITM=2000A V VTM Maximum peak on-state voltage - - 2.65 ITM=3900A V VT0 Threshold voltage - - 1.44 V rT Slope resistance - - 0.33 (dv/dt)cr Critical rate of rise of off-state voltage 200 - - VD=80% V I

Peak off-state current - - 150 Rated V

DRM

I

Peak reverse current - - 150 Rated V

RRM

VGT Gate trigger voltage - - 3.0 IGT Gate trigger current - - 300 mA

=25°C VD=10V, IT=3A

T

j

VGD Gate non-trigger voltage - - 0.25 Rated V

, Linear ramp, Gate o/c

DRM

mA

DRM

mA

RRM

V

DRM

IH Holding current - - 1000 Tj=25°C mA tgd Gate controlled turn-on delay time - 0.5 1.0 tgt Turn-on time - 1.0 2.0

V

=67% V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

, ITM=1000A, di/dt=60A/µs,

DRM

Qrr Recovered charge - 1250 Qra Recovered charge, 50% Chord - 700 920 µC Irm Reverse recovery current - 230 - A t

rr

Reverse recovery time - 6.0 - µs

35 - 50

tq Turn-off time (note 2)

50 - 70

R

thJK

Thermal resistance, junction to heatsink

- - 0.022 Double side cooled K/W

- - 0.044 Single side cooled K/W

I

=1000A, tp=1000µs, di/dt=60A/µs,

TM

V

=50V

r

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, V

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, V

=33%V

d

=33%V

d

DRM

, dV

/dt=20V/µs

d

, dV

/dt=200V/µs

d

F Mounting force 19 - 26 kN Wt Weight - 510 - g

mΩ

V/µs

V

µs

µC

µs

Notes:-

1) Unless otherwise indicated T

2)

The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for details of t

codes.

q

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 2 of 12 August 2012

=125°C.

j

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

RSM

V

VD VR

DC V 22 2200 2300 1350 24 2400 2500 1450 25 2500 2600 1500

2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time This Report is applicable to other t

/re-applied dv/dt combinations when supply has been agreed by

q

Sales/Production.

4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.

j

6.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance.

7.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

8.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of I (t

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

p1

should be between five and ten times IGT, which is shown on page 2. Its duration

GM

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current I magnitude in the order of 1.5 times I

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 3 of 12 August 2012

should remain flowing for the same duration as the anode current and have a

G

.

GT

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

(

)

⋅−=

9.0 Frequency Ratings The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum

ratings shown on page 1.

10.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

11.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

12.0 Maximum Operating Frequency The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t

) and for the off-state voltage to reach full value (tv), i.e.

q

f

13.0 On-State Energy per Pulse Characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings. Let E

Let R and T

Then the average dissipation will be:

max

=

be the Energy per pulse for a given current and pulse width, in joules

p

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

1

vqpulse ttt

++

⋅= 125

14.0 Reverse recovery ratings is based on 50% Irm chord as shown in Fig. 1

(i) Q

ra

(ii) Qrr is based on a 150µs integration time i.e.

(iii)

.)(max

RWT and fEW

()

HsJthAVSINKPAV

−

Fig. 1

=

FactorK =

150

s

µ

dtiQ

.

rrrr

∫

0

1

t

2

t

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 4 of 12 August 2012

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

(

)

⋅+⋅

⋅

(

⋅

15.0 Reverse Recovery Loss

15.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from the following:

−=

)()(

Where k=0.227 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = rated frequency Hz at the original heat sink temperature. R

The total dissipation is now given by:

15.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9). Let f be the operating frequency in Hz

() ( )

Where T T

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to a peak value (V 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge, care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below:

= d.c. thermal resistance (°C/W).

th(J-Hs)

+=

SINK (new)

SINK (original)

(original)(TOT)

is the required maximum heat sink temperature and

is the heat sink temperature given with the frequency ratings.

) of 67% of the maximum grade. If a different grade is being used or Vrm is other than

rm

fEWW

−=

RfkETT

()

−

)

fRETT

thoriginalSINKnewSINK

HsJthoriginalSINKnewSINK

=

2

R

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 5 of 12 August 2012

V

C

r

di

⋅

dt

S

Where:

⋅= 4

V C R

r S

Commutating source voltage

=

Snubber capacitance

=

Snubber resistance

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

(

4

p

16.0 Computer Modelling Parameters

16.1 Calculating V

The on-state characteristic I (i) the well established V (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

using ABCD Coefficients

T

vs VT, on page 7 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

given below:

T

in

T

)

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics where possible. The resulting values for V which is limited to that plotted.

25°C Coefficients 125°C Coefficients

A B C D

16.2 D.C. Thermal Impedance Calculation

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

= Thermal resistance at time t.

r

t

r

= Amplitude of pth term.

= Time Constant of r

τ

Term 1 2 3 4

rp

τ

p

Term 1 2 3 4

rp

τ

p

0.0130425 6.2957×10

1.53109 0.165647 0.0207267 3.4714×10

0.03517957 5.171738×10

6.431644 0.5234892 0.08301891 5.032106×10

term.

th

agree with the true device characteristic over a current range,

T

0.6194115 1.448949

0.1996517 4.04153×10

3.2676 ×10

-0.0131095 -5.4269×10

D.C. Single Side Cooled

D.C. Double Side Cooled

-

3.35803×10

−

=

np

⎛ ⎜

∑

=

p

1

pt

⎜ ⎝

-3

2.35655×10-3 2.23408×10-3

-3

5.107098×10-3 3.198402×10-3

t

⎞

τ

p

⎟

err

−⋅= ⎟

⎠

IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-

-3

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 6 of 12 August 2012

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

(A)

T

10000

Tj = 125°CTj = 25°C

1000

(K/W)

0.01

(th)t

0.1

R1279NC22x-25x

Issue 2

SSC 0.044K/W

DSC 0.022K/W

Instantaneous on-state current - I

R1279NC22x-25x

100

12345

Instantaneous on-state voltage - V

Issue 2

(V)

T

Figure 3 - Gate characteristics - Trigger limits

6

R1279NC22x-25x

Issue 2

Tj=25°C

5

4

(V)

GT

IGT, V

3

Gate Trigger Voltage - V

2

Max VG dc

GT

0.001

Transient Thermal Impedance - Z

0.0001

0.0001 0.001 0.01 0.1 1 10 100

Figure 4 - Gate characteristics - Power curves

20

R1279NC22x-25x

Issue 2

Tj=25°C

18

16

14

(V)

GT

12

10

Max VG dc

Time (s)

8

Gate Trigger Voltage - V

6

PG Max 30W dc

`

25°C

125°C

1

IGD, V

GD

0

0 0.25 0.5 0.75 1

Gate Trigger Current - I

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 7 of 12 August 2012

-10°C

GT

-40°C

(A)

Min VG dc

4

2

0

0246810

PG 5W dc

Gate Trigger Current - I

(A)

GT

Min VG dc

r

Figure 5 - Total recovered charge, Q

10000

(µC)

rr

R1279NC22x-25x

Issue 2

Tj = 125°C

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

Figure 6 - Recovered charge, Qra (50% chord)

r

2000A 1500A 1000A

500A

10000

(µC)

ra

R1279NC22x-25x

Issue 2

Tj = 125°C

2000A 1500A 1000A

1000

Total recovered charge - Q

100

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 7 - Peak reverse recovery current, Irm

1000

2000A 1500A 1000A

500A

1000

Recovered charge - Q

100

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 8 - Maximum recovery time, t

100

R1279NC22x-25x

Issue 2

Tj = 125°C

500A

(50% chord)

r

(A)

rm

(µs)

rr

10

2000A 1500A

Reverse recovery current - I

R1279NC22x-25x

100

10 100 1000

Commutation rate - di/dt (A/µs)

Reverse recovery time - t

Tj = 125°C

Issue 2

1

10 100 1000

Commutation rate - di/dt (A/µs)

1000A 500A

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 8 of 12 August 2012

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

A

Figure 9 – Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse

1000

2000 1500

1000A

1.00E+02

R1279NC22x-25x

Issue 2

Tj=125°C

(mJ)

r

Energy per pulse - E

No Snubber:

Tj = 125°C

Vrm = 33%V

R1279NC22x-25x

Issue 2

100

10 100 1000

Commutation rate - di/dt (A/µs)

Figure 11 - Sine wave frequency ratings

1.00E+05

500A

100% Duty Cycle

R1279NC22x-25x

Issue 2

500A

THs=55°C

RRM

1.00E+01

5kA

3kA

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

Figure 12 - Sine wave frequency ratings

1.00E+05

2kA

1kA

500A

250A

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

R1279NC22x-25x

500A

Issue 2

THs=85°C

1kA

1.00E+04

2kA

3kA

1.00E+03

Frequency (Hz)

5kA

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse Width (s)

1.00E+04

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1kA

2kA

3kA

5kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

100% Duty Cycle

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 9 of 12 August 2012

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings

1.00E+05

1.00E+04

500A

1kA

2kA

R1279NC22x-25x

Issue 2

di/dt=100A/µs

THs=55°C

100% Duty Cycle

1.00E+05

1.00E+04

500A

1kA 2kA

R1279NC22x-25x

Issue 2

di/dt=500A/µs

THs=55°C

100% Duty Cycle

3kA

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

5kA

Pulse width (s)

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

3kA

5kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

500A 1kA

2kA

3kA

R1279NC22x-25x

di/dt=100A/µs

100% Duty Cycle

Issue 2

THs=85°C

1.00E+05

1.00E+04

1.00E+03

250A

500A

1kA 2kA

3kA

R1279NC22x-25x

Issue 2

di/dt=500A/µs

THs=85°C

100% Duty Cycle

Frequency (Hz)

5kA

Frequency (Hz)

1.00E+02 5kA

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 10 of 12 August 2012

1.00E+00

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse

1.00E+03

R1279NC22x-25x

Issue 2

di/dt=100A/µs Tj=125°C

1.00E+03

R1279NC22x-25x

Issue 2

di/dt=500A/µs Tj=125°C

1.00E+02

1.00E+01

5kA

1.00E+00

Energy per pulse (J)

1.00E-01

1.00E-02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

3kA

2kA

1kA

500A

250A

Pulse width (s)

Figure 19 - Maximum surge and I2t Ratings

Gate may temporarily lose control of conduction angle

100000

R1279NC22x-25x

Issue 2

Tj (initial) = 125°C

(A)

TSM

10000

1.00E+02

5kA 3kA 2kA

1.00E+01

1.00E+00

Energy per pulse (J)

1kA 500A

1.00E-01

1.00E-02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

250A

1.00E+08

I2t: V

I2t: 60% V

RRM

≤10V

RRM

1.00E+07

2

s) t (A

I

: V

RRM

: 60% V

≤10V

RRM

1.00E+06

Maximum I

TSM

I

TSM

Total peak half sine surge current - I

1000

1.00E+05

135101 510 50100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 11 of 12 August 2012

Outline Drawing & Ordering Information

Distributed Gate Thyristor Types R1279NC22x to R1279NC25x

101A223

ORDERING INFORMATION (Please quote 10 digit code as below)

R1279 NC

Fixed

Type Code

Typical order code: R1279NC24L – 2400V V

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.

In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report.

Fixed

Outline Code

, 65µs tq, 27.7mm clamp height capsule.

DRM

♦ ♦

Fixed Voltage Code

V

/100

DRM

22-25

x

t

Code

J=50µs, K=60µs, L=65µs,

q

M=70µs

Data Sheet. Type R1279NC22x to R1279NC25x Issue 2 Page 12 of 12 August 2012

Westcode Semiconductors R1279NC22x, R1279NC25x Data Sheet

Specifications and Main Features

Frequently Asked Questions

User Manual