Date:- 15 Jun, 2001
WESTCODE
Data Sheet Issue:- 1
Distributed Gate Asymmetric Thyristor
Types R1275NS16x to R1275NS21x
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 1600-2100 V
Non-repetitive peak off-state voltage, (note 1) 1600-2100 V
Repetitive peak reverse voltage, (note 1) 1300-1800 V
Non-repetitive peak reverse voltage, (note 1) 1400-1900 V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
t capacity for fusing tp=10ms, V
I
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
=55°C, (note 2) 1275 A
sink
=85°C, (note 2) 861 A
sink
=85°C, (note 3) 500 A
sink
=25°C, (note 2) 2541 A
sink
=25°C, (note 4) 1647 A
sink
, (note 5) 15.5 kA
RRM
≤
10V, (note 5)
RM
, (note 5) 1.20×10
RRM
≤
10V, (note 5)
RM
MAXIMUM
LIMITS
MAXIMUM
LIMITS
17 kA
6
1.45×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 1 of 12 June, 2001
DRM
, IFG=2A, t
DRM
.
≤
0.5µs, T
r
case
=125°C.
WESTCODE
Positive development in power electronics
Characteristics
R1275CH16x to R1275CH21x
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
0
r
S
dv/dt Critical rate of rise of off-state voltage - - 200 VD=80% V
I
DRM
I
RRM
V
GT
I
GT
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
R
th (j-hs)
Maximum peak on-state voltage - - 1.9 ITM=2000A V
Threshold voltage - - 1.207 V
Slope resistance - - 0.342
Peak off-state current - - 150 Rated V
Peak reverse current - - 150 Rated V
DRM
RRM
Gate trigger voltage - - 3.0 Tj=25°C V
Gate trigger current - - 300 Tj=25°C VD=10V, IT=3A mA
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 0.4 1.0
Delay time - 1.0 2.0
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
Recovered charge - 940 - µC
Recovered charge, 50% Chord - 420 500 µC
Reverse recovery current - 188 - A
I
=1000A, tp=1000µs, di/dt=60A/µs,
TM
V
=50V
r
Reverse recovery time - 5.05 -
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
=50V, Vdr=80%V
r
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
=50V, Vdr=80%V
r
Turn-off time
Thermal resistance, junction to heatsink
--68
65 - 70
- - 0.024 Double side cooled K/W
- - 0.048 Single side cooled K/W
(Note 1)
DRM
, IT=2000A, di/dt=60A/µs,
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
µs
µs
µs
F Mounting force 19 - 26 kN
W
t
Weight - 510 - g
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
The required tq (specified with dVdr/dt=200V/µs) is repres ented by an ‘x’ in the device part number. See ordering information
2)
for details of t
codes.
q
Introduction
The R1275 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. T hey are therefore suitable f or
medium current, medium frequency applications.
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 2 of 12 June, 2001
WESTCODE
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Positive development in power electronics
R1275CH16x to R1275CH21x
V
Voltage Grade
16 1600 1300 1400 1040 870
18 1800 1500 1600 1150 985
20 2000 1700 1800 1250 1095
21 2100 1800 1900 1300 1150
2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25oC.
6.0 Rate of rise of on-state current
DRM VDSM
V
V
RRM
V
V
RSM
V
V
D
DC V
V
R
DC V
The maxim um un-primed rate of rise of on-s tate current must not exceed 1500A/µs at any time dur ing
turn-on on a non-repetitive basis. For repetitive per formanc e, the on-state r ate of r ise of c urrent m ust not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency The maximum operating frequenc y is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
1
=
max
f
++
vqpulse
ttt
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 3 of 12 June, 2001
WESTCODE
(
)
(
)
10.0 On-State Energy per Pulse Characteristics These curves enable rapid estim ation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
Positive development in power electronics
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
R1275CH16x to R1275CH21x
11.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
is based on a 150µs integration time.
(ii) Q
rr
i.e.
=
.)(max
150
∫
0
µ
s
rrrr
125
Fig. 1
.
dtiQ
⋅−=⋅=
RWT and fEW
()
−
HsJthAVSINKPAV
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature c an
then be evaluated from:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
= d.c. thermal resistance (°C/W).
R
th(J-Hs)
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 4 of 12 June, 2001
FactorK
)()(
=
2
t
⋅+⋅−=
RfkETT
()
−
HsJthoriginalSINKnewSINK
WESTCODE
The total dissipation is now given by:
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
Positive development in power electronics
(original)(TOT)
R1275CH16x to R1275CH21x
⋅+=
fEWW
() ( )
Where T
T
SINK (original)
A suitable R-C snubber network is connected across the thyristor to restrict the transient revers e voltage
to a peak value (V
67% of Grade, the reverse loss m ay be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1
This thyristor has a low reverse recovered c harge and peak reverse recovery current. W hen measuring
the charge care must be taken to ensure that:
R
- Reverse Recovery Loss by Measurement
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the m easuring os cilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The form ula used for the c alculation
of this snubber is shown below:
2
4
SINK (new)
V
⋅=
⋅
C
S
is the required maximum heat sink temperature and
is the heat sink temperature given with the frequency ratings.
) of 67% of the maximum grade. If a diff erent grade is being used or Vrm is other than
rm
r
di
dt
()
⋅⋅−=
fRETT
thoriginalSINKnewSINK
Where: Vr= Commutating source voltage
C
= Snubber capacitance
S
R = Snubber resistance
13.0 Gate Drive
The recomm ended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 5 of 12 June, 2001
WESTCODE
p
p
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
Positive development in power electronics
R1275CH16x to R1275CH21x
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
The constants, derived by curve fitting sof tware, are given in this report for hot and cold characteristics
where possible. The resulting values f or V
which is limited to that plotted.
14.2 D.C. Thermal Impedance Calculation
given below:
T
vs VT, on page 7 is represented in two ways;
T
and rs tangent used for rating purposes and
o
()
ln
agree with the true device characteristic over a curr ent range,
T
125°C Coefficients
A 1.23001347
B -0.0588432
1
-4
−
t
τ
p
−⋅=
err
C 1.2853×10
D 0.01923445
=
np
∑
pt
=
p
1
in
T
⋅+⋅+⋅+=
IDICIBAV
TTTT
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
= Thermal resistance at time t.
r
t
r
= Amplitude of pth term.
τ
= Time Constant of rth term.
D.C. Double Side Cooled
Term12345
r
p
τ
p
Term123456
r
p
τ
p
0.01249139 6.316833×10
0.8840810 0.1215195 0.03400152 6.742908×10
0.02919832 4.863568×10-33.744798×10-36.818034×10-32.183558×10-31.848294×10
6.298105 3.286174 0.5359179 0.1186897 0.02404574 3.379476×10
-3
D.C. Single Side Cooled
1.850855×10
-3
1.922045×10
-3
-3
6.135330×10
1.326292×10
-4
-3
-3
-3
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 6 of 12 June, 2001
WESTCODE
Positive development in power electronics
R1275CH16x to R1275CH21x
Curves
Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance
10000
0.1
SSC 0.048K/W
Tj = 125°C
DSC 0.024K/W
0.01
(A)
T
1000
Instantaneous on-state current - I
(K/W)
(th)t
0.001
Transient Thermal Impedance - Z
0.0001
R1275NS16-21x
100
0 0.5 1 1.5 2 2.5 3
Instantaneous on-state voltage - V
Issue 1
(V)
T
0.00001
0.0001 0.001 0.01 0.1 1 10 100
Time (s)
R1275NS16-21x
Issue 1
Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves
6
R1275NS16-21x
Issue 1
Tj=25°C
20
R1275NS16-21x
Tj=25°C
18
Issue 1
5
16
(V)
4
GT
IGT, V
Max VG dc
GT
3
(V)
GT
14
Max VG dc
12
10
8
Gate Trigger Voltage - V
2
25°C
-10°C
125°C
-40°C
1
IGD, V
GD
Min VG dc
0
0 0.2 0.4 0.6 0.8 1
Gate Trigger Current - I
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 7 of 12 June, 2001
(A)
GT
Gate Trigger Voltage - V
PG Max 30W dc
6
4
PG 2W dc
2
Min VG dc
0
0246810
Gate Trigger Current - I
(A)
GT
WESTCODE
Positive development in power electronics
R1275CH16x to R1275CH21x
Figure 5 - Total recovered charge, Q
10000
(µC)
rr
1000
Total recovered charge - Q
100
10 100 1000
Commutation r ate - di/dt (A/µ s)
rr
2000A
1500A
1000A
500A
Tj = 125°C
R1275NS16-21x
Issue 1
Figure 6 - Recovered charge, Qra (50% chord)
10000
(µC)
ra
2000A
1500A
1000
Recovered charge - Q
100
10 100 1000
Commutation r ate - di/dt (A/µ s)
1000A
500A
Tj = 125°C
R1275NS16-21x
Issue 1
Figure 7 - Peak reverse recovery current, I
1000
2000A
1500A
1000A
500A
(A)
RM
100
Reverse recovery current - I
Tj = 125°C
R1275NS16-21x
10
10 100 1000
Commutation r ate - di/dt (A/µs)
Issue 1
rm
Figure 8 - Maximum recovery time, trr (50% chord)
10
(µs)
rr
2000A
1500A
1000A
500A
Reverse recovery time - t
Tj = 125°C
R1275NS16-21x
1
Issue 1
10 100 1000
Commutation r ate - di/dt (A/µs)
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 8 of 12 June, 2001
WESTCODE
A
A
A
A
Positive development in power electronics
R1275CH16x to R1275CH21x
Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse
1000
(mJ)
r
2000
1500
1000
500
Energy per pulse - E
R1275NS16-21x
100
10 100 1000
Commutation rate - di/dt (A/µs)
Snubber Value
0.25µF, 5
V
= 67%V
rm
Tj = 125°C
Issue 1
Ω
RRM
1.00E+02
1.00E+01
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
R1275NS16-21x
Issue 1
Tj=125°C
5kA
3kA
2kA
1.5kA
1kA
500A
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings
1.00E+05
1kA
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.5kA
2kA
3kA
5kA
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse Width (s)
R1275NS16-21x
Issue 1
THs=55°C
1.00E+05
500A
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
1kA
1.5kA
2kA
3kA
5kA
THs=85°C
R1275NS16-21x
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 9 of 12 June, 2001
WESTCODE
Positive development in power electronics
R1275CH16x to R1275CH21x
Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
1kA
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
1.5kA
2kA
3kA
5kA
THs=55°C
di/dt=100A/µs
R1275NS16-21x
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
500A
1kA
3kA
5kA
THs=55°C
di/dt=500A/µs
R1275NS16-21x
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
1.5kA
2kA
Pulse width (s)
Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+05
500A
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1kA
1.5kA
2kA
3kA
5kA
THs=85°C
di/dt=100A/µs
R1275NS16-21x
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
500A
1kA
1.5kA
3kA
5kA
THs=85°C
di/dt=500A/µs
R1275NS16-21x
Issue 1
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
2kA
Pulse width (s)
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 10 of 12 June, 2001
WESTCODE
Positive development in power electronics
R1275CH16x to R1275CH21x
Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse
1.00E+03
R1275NS16-21x
Issue 1
di/dt=100A/µs
Tj=125°C
1.00E+03
R1275NS16-21x
Issue 1
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+01
5kA
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
1.00E-05 1.00E-04 1.00E-03 1.00E-02
3kA
2kA
1.5kA
1kA
500A
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
1.00E+02
5kA
3kA
1.00E+01
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
1.00E-05 1.00E-04 1.00E-03 1.00E-02
2kA
Pulse width (s)
1.5kA
1kA
500A
1.00E+08
(A)
TSM
RRM
≤
10V
RRM
1.00E+07
2
2
s)
t (A
I2t: V
I2t: 60% V
10000
: V
RRM
: 60% V
≤
10V
RRM
1.00E+06
Maximum I
Total peak half sine surge current - I
I
TSM
I
TSM
Tj (initial) = 125°C
R1275NS16-21x
Issue 1
1000
135101
5
10 50 100
1.00E+05
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 11 of 12 June, 2001
WESTCODE
Positive development in power electronics
Outline Drawing & Ordering Information
R1275CH16x to R1275CH21x
ORDERING INFORMATION
R1275 NS
Fixed
Type Code
Typical order code: R1275NS16L – 1600V V
Outline Code
Fixed
, 65µs tq, 27.7mm clamp height capsule.
DRM
(Please quote 10 digit code as bel ow)
♦ ♦
♦ ♦ ♦♦♦♦
♦ ♦♦ ♦
Off-state Voltage Code
V
DRM
16-21
/100
UK: Westcode Semiconductors Ltd.
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448
WESTCODE
E-Mail: WSL.sales@westcode.com
USA: Westcode Semiconductors Inc.
3270 Cherry Avenue, Long Beach, California 90807
Tel: 562 595 6971 Fax: 562 595 8182
Internet: http://www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the
conditions and limits contained in this report.
E-Mail: WSI.sales@westcode.com
Code
t
q
L=65µs, M=70µs
© Westcode Semiconductors Ltd.
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 12 of 12 June, 2001
Loading...