Westcode Semiconductors R1275NS16x, R1275NS21x Data Sheet
Date:- 15 Jun, 2001
WESTCODE
Data Sheet Issue:- 1
Distributed Gate Asymmetric Thyristor
Types R1275NS16x to R1275NS21x
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 1600-2100 V
Non-repetitive peak off-state voltage, (note 1) 1600-2100 V
Repetitive peak reverse voltage, (note 1) 1300-1800 V
Non-repetitive peak reverse voltage, (note 1) 1400-1900 V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
t capacity for fusing tp=10ms, V
I
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
=55°C, (note 2) 1275 A
sink
=85°C, (note 2) 861 A
sink
=85°C, (note 3) 500 A
sink
=25°C, (note 2) 2541 A
sink
=25°C, (note 4) 1647 A
sink
, (note 5) 15.5 kA
RRM
≤
10V, (note 5)
RM
, (note 5) 1.20×10
RRM
≤
10V, (note 5)
RM
MAXIMUM
LIMITS
MAXIMUM
LIMITS
17 kA
6
1.45×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 1 of 12 June, 2001
DRM
, IFG=2A, t
DRM
.
≤
0.5µs, T
r
case
=125°C.
WESTCODE
Positive development in power electronics
Characteristics
R1275CH16x to R1275CH21x
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
0
r
S
dv/dt Critical rate of rise of off-state voltage - - 200 VD=80% V
I
DRM
I
RRM
V
GT
I
GT
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
R
th (j-hs)
Maximum peak on-state voltage - - 1.9 ITM=2000A V
Threshold voltage - - 1.207 V
Slope resistance - - 0.342
Peak off-state current - - 150 Rated V
Peak reverse current - - 150 Rated V
DRM
RRM
Gate trigger voltage - - 3.0 Tj=25°C V
Gate trigger current - - 300 Tj=25°C VD=10V, IT=3A mA
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 0.4 1.0
Delay time - 1.0 2.0
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
Recovered charge - 940 - µC
Recovered charge, 50% Chord - 420 500 µC
Reverse recovery current - 188 - A
I
=1000A, tp=1000µs, di/dt=60A/µs,
TM
V
=50V
r
Reverse recovery time - 5.05 -
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
=50V, Vdr=80%V
r
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
=50V, Vdr=80%V
r
Turn-off time
Thermal resistance, junction to heatsink
--68
65 - 70
- - 0.024 Double side cooled K/W
- - 0.048 Single side cooled K/W
(Note 1)
DRM
, IT=2000A, di/dt=60A/µs,
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
µs
µs
µs
F Mounting force 19 - 26 kN
W
t
Weight - 510 - g
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
The required tq (specified with dVdr/dt=200V/µs) is repres ented by an ‘x’ in the device part number. See ordering information
2)
for details of t
codes.
q
Introduction
The R1275 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. T hey are therefore suitable f or
medium current, medium frequency applications.
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 2 of 12 June, 2001
WESTCODE
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Positive development in power electronics
R1275CH16x to R1275CH21x
V
Voltage Grade
16 1600 1300 1400 1040 870
18 1800 1500 1600 1150 985
20 2000 1700 1800 1250 1095
21 2100 1800 1900 1300 1150
2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25oC.
6.0 Rate of rise of on-state current
DRM VDSM
V
V
RRM
V
V
RSM
V
V
D
DC V
V
R
DC V
The maxim um un-primed rate of rise of on-s tate current must not exceed 1500A/µs at any time dur ing
turn-on on a non-repetitive basis. For repetitive per formanc e, the on-state r ate of r ise of c urrent m ust not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency The maximum operating frequenc y is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
1
=
max
f
++
vqpulse
ttt
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 3 of 12 June, 2001
WESTCODE
(
)
(
)
10.0 On-State Energy per Pulse Characteristics These curves enable rapid estim ation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
Positive development in power electronics
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
R1275CH16x to R1275CH21x
11.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
is based on a 150µs integration time.
(ii) Q
rr
i.e.
=
.)(max
150
∫
0
µ
s
rrrr
125
Fig. 1
.
dtiQ
⋅−=⋅=
RWT and fEW
()
−
HsJthAVSINKPAV
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature c an
then be evaluated from:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
= d.c. thermal resistance (°C/W).
R
th(J-Hs)
Data Sheet. Types R1275CH16x to R1275CH21x Issue 1 Page 4 of 12 June, 2001
FactorK
)()(
=
2
t
⋅+⋅−=
RfkETT
()
−
HsJthoriginalSINKnewSINK
Loading...