Date:- 01 August 2012
2
Data Sheet Issue:- 3
Distributed Gate Thyristor
Types R1275NC14x to R1275NC21x
Absolute Maximum Ratings
V
DRM
V
DSM
V
RRM
V
RSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) 1400-2100 V
Non-repetitive peak off-state voltage, (note 1) 1400-2100 V
Repetitive peak reverse voltage, (note 1) 1400-1800 V
Non-repetitive peak reverse voltage, (note 1) 1500-1900 V
OTHER RATINGS
I
Maximum average on-state current, T
T(AV)M
I
Maximum average on-state current. T
T(AV)M
I
Maximum average on-state current. T
T(AV)M
I
Nominal RMS on-state current, T
T(RMS)
I
D.C. on-state current, T
T(d.c.)
I
Peak non-repetitive surge tp=10ms, Vrm=0.6V
TSM
I
TSM2
Peak non-repetitive surge t
=25°C, (note 4) 2147 A
sink
=10ms, Vrm≤10V, (note 5)
p
I2t I2t capacity for fusing tp=10ms, Vrm=0.6V
I2t
(di/dt)cr
V
RGM
P
G(AV)
I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Critical rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
=55°C, (note 2) 1275 A
sink
=85°C, (note 2) 861 A
sink
=85°C, (note 3) 508 A
sink
=25°C, (note 2) 2541 A
sink
, (note 5) 15.5 kA
RRM
, (note 5) 1.20×106 A
RRM
PGM Peak forward gate power 30 W
T
Operating temperature range -40 to +125 °C
j op
T
Storage temperature range -40 to +150 °C
stg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
, IFG=2A, tr≤0.5µs, T
DRM
initial.
j
=125°C.
case
below 25°C.
j
MAXIMUM
LIMITS
MAXIMUM
LIMITS
UNITS
UNITS
17 kA
1.45×106 A
s
2
s
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 1 of 12 August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
r
r
r
r
r
r
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
VTM Maximum peak on-state voltage - - 1.9 ITM=2000A V
VTM Maximum peak on-state voltage - - 2.45 ITM=3825A V
VT0 Threshold voltage - - 1.207 V
rT Slope resistance - - 0.342
(dv/dt)cr Critical rate of rise of off-state voltage 200 - - VD=80% V
I
Peak off-state current - - 150 Rated V
DRM
I
Peak reverse current - - 150 Rated V
RRM
VGT Gate trigger voltage - - 3.0
IGT Gate trigger current - - 300 mA
=25°C VD=10V, IT=3A
T
j
VGD Gate non-trigger voltage - - 0.25 Rated V
, Linear ramp, Gate o/c
DRM
mA
DRM
mA
RRM
V
DRM
IH Holding current - - 1000 Tj=25°C mA
tgd Gate controlled turn-on delay time - 0.4 1.0
tgt Turn-on time - 1.0 2.0
V
=67% V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
, IT=2000A, di/dt=60A/µs,
DRM
Qrr Recovered charge - 940 Qra Recovered charge, 50% Chord - 420 500 µC
Irm Reverse recovery current - 188 - A
t
rr
Reverse recovery time - 5.0 - µs
55 - 60
tq Turn-off time (note 2)
65 - 70
R
thJK
Thermal resistance, junction to heatsink
- - 0.024 Double side cooled K/W
- - 0.048 Single side cooled K/W
I
=1000A, tp=1000µs, di/dt=60A/µs,
TM
V
=50V
r
=1000A, tp=1000µs, di/dt=60A/µs,
I
TM
V
=50V, V
=1000A, tp=1000µs, di/dt=60A/µs,
I
TM
V
=50V, V
=80%V
d
=80%V
d
DRM
DRM
, dV
/dt=20V/µs
d
, dV
/dt=200V/µs
d
F Mounting force 19 - 26 kN
Wt Weight - 510 - g
mΩ
V/µs
V
µs
µC
µs
Notes:-
1) Unless otherwise indicated T
2)
The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of t
codes.
q
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 2 of 12 August 2012
=125°C.
j
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM VDSM
V
V
RRM
V
V
RSM
V
VD
DC V
VR
DC V
14 1400 1400 1500 930 930
16 1600 1600 1700 1040 1040
18 1800 1800 1900 1150 1150
20 2000 1800 1900 1250 1150
21 2100 1800 1900 1300 1150
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
below 25°C.
j
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
should be between five and ten times IGT, which is shown on page 2. Its duration
GM
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 3 of 12 August 2012
should remain flowing for the same duration as the anode current and have a
G
.
GT
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
(
)
⋅−=
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(t
) and for the off-state voltage to reach full value (tv), i.e.
q
f
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let E
Let R
and T
Then the average dissipation will be:
max
=
be the Energy per pulse for a given current and pulse width, in joules
p
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
1
vqpulse ttt
++
⋅= 125
14.0 Reverse recovery ratings
is based on 50% Irm chord as shown in Fig. 1
(i) Q
ra
(ii) Qrr is based on a 150µs integration time i.e.
(iii)
.)(max
RWT and fEW
()
HsJthAVSINKPAV
−
Fig. 1
=
FactorK =
150
s
µ
dtiQ
.
rrrr
∫
0
1
t
2
t
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 4 of 12 August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
(
)
⋅+⋅
⋅
(
⋅
⋅
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
−=
)()(
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R
The total dissipation is now given by:
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
() ( )
Where T
T
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
= d.c. thermal resistance (°C/W).
th(J-Hs)
+=
SINK (new)
SINK (original)
(original)(TOT)
is the required maximum heat sink temperature and
is the heat sink temperature given with the frequency ratings.
) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
rm
fEWW
−=
RfkETT
()
−
)
fRETT
thoriginalSINKnewSINK
HsJthoriginalSINKnewSINK
=
2
R
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 5 of 12 August 2012
V
C
r
di
⋅
dt
S
Where:
⋅= 4
V
C
R
r
S
Commutating source voltage
=
Snubber capacitance
=
Snubber resistance
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
(
p
p
16.0 Computer Modelling Parameters
16.1 Calculating V
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
using ABCD Coefficients
T
vs VT, on page 7 is represented in two ways;
T
and rT tangent used for rating purposes and
T0
given below:
T
in
T
)
The constants, derived by curve fitting software, are given in this report for hot characteristics where
possible. The resulting values for V
is limited to that plotted.
16.2 D.C. Thermal Impedance Calculation
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
= Thermal resistance at time t.
r
t
r
= Amplitude of pth term.
= Time Constant of r
τ
Term 1 2 3 4 5
rp
τ
p
Term 1 2 3 4 5 6
rp
τ
p
0.01249139 6.316833×10-3 1.850855×10-3 1.922045×10-3 6.135330×10-4
0.8840810 0.1215195 0.03400152 6.742908×10-3 1.326292×10-3
0.02919832
6.298105 3.286174 0.5359179 0.1186897 0.02404574 3.379476×10
4.863568×10
agree with the true device characteristic over a current range, which
T
125°C Coefficients
A 1.23001347
B -0.0588432
C 1.2853×10-4
D 0.01923445
−
t
⎞
τ
p
⎟
err
−⋅=
⎟
⎠
6.818034×10
3
3
=
np
∑
pt
=
p
1
term.
th
D.C. Double Side Cooled
D.C. Single Side Cooled
-
3.744798×10
⎛
⎜
1
⎜
⎝
-3
IDICIBAV ⋅+⋅+⋅+= ln
TTTT
-
2.183558×10
-
3
1.848294×10
-3
-3
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 6 of 12 August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Curves
Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance
10000
R1275NC14x-21x
Issue 3
0.1
R1275NC14x-21x
Issue 3
SSC 0.048K/W
Tj = 125°C
(A)
T
1000
Instantaneous on-state current - I
100
00.511.522.53
Instantaneous on-state voltage - V
(V)
T
Figure 3 - Gate characteristics - Trigger limits
6
R1275NC14x-21x
Issue 3
Tj=25°C
DSC 0.024K/W
0.01
(K/W)
(th)t
0.001
Transient Thermal Impedance - Z
0.0001
0.00001
0.0001 0.001 0.01 0.1 1 10 100
Figure 4 - Gate characteristics - Power curves
20
R1275NC14x-21x
Issue 3
Tj=25°C
18
Time (s)
`
(V)
GT
5
4
IGT, V
3
Max VG dc
GT
(V)
GT
16
14
Max VG dc
12
10
8
Gate Trigger Voltage - V
2
25°C
-10°C
125°C
1
IGD, V
GD
0
0 0.2 0.4 0.6 0.8 1
Gate Trigger Current - I
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 7 of 12 August 2012
-40°C
(A)
GT
Min VG dc
Gate Trigger Voltage - V
6
4
PG 2W dc
2
0
0246810
Gate Trigger Current - I
PG Max 30W dc
Min VG dc
(A)
GT
r
r
Figure 5 - Total recovered charge, Q
10000
R1275NC14x-21x
Issue 3
Tj = 125°C
(µC)
rr
1000
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Figure 6 - Recovered charge, Qra (50% chord)
r
10000
R1275NC14x-21x
Issue 3
Tj = 125°C
2000A
1500A
1000A
500A
(µC)
ra
2000A
1500A
1000
1000A
500A
Total recovered charge - Q
100
10 100 1000
Commutation rate - di/dt (A/µs)
Figure 7 - Peak reverse recovery current, Irm
1000
2000A
1500A
1000A
500A
(A)
RM
100
Recovered charge - Q
100
10 100 1000
Commutation rate - di/dt (A/µs)
Figure 8 - Maximum recovery time, t
10
(µs)
rr
(50% chord)
r
R1275NC14x-21x
Issue 3
Tj = 125°C
2000A
1500A
1000A
500A
Reverse recovery current - I
Reverse recovery time - t
Tj = 125°C
R1275NC14x-21x
10
Issue 3
10 100 1000
Commutation rate - di/dt (A/µs)
1
10 100 1000
Commutation rate - di/dt (A/µs)
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 8 of 12 August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Figure 9 – Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse
1000
(mJ)
r
2000A
1500A
1000A
500A
Energy per pulse - E
R1275NC14x-21x
100
10 100 1000
Commutation rate - di/dt (A/µs)
Snubber Value
0.25µF, 5
Ω
= 67%V
V
rm
RRM
Tj = 125°C
Issue 3
1.00E+02
1.00E+01
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
R1275NC14x-21x
Issue 3
Tj=125°C
5kA
3kA
2kA
1.5kA
1kA
500A
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 11 - Sine wave frequency ratings
1.00E+05
1kA
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.5kA
2kA
3kA
5kA
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse Width (s)
R1275NC14x-21x
Issue 3
THs=55°C
Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+04
1.00E+03
100% Duty Cycle500A
1kA
1.5kA
2kA
3kA
R1275NC14x-21x
Frequency (Hz)
5kA
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Issue 3
THs=85°C
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 9 of 12 August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1kA
1.5kA
2kA
3kA
5kA
R1275NC14x-21x
Issue 3
di/dt=100A/µs
THs=55°C
100% Duty Cycle
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
500A
1kA
5kA
3kA
R1275NC14x-21x
Issue 3
di/dt=500A/µs
THs=55°C
100% Duty Cycle
1.5kA
2kA
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
500A
1kA
1.5kA
2kA
3kA
5kA
R1275NC14x-21x
Issue 3
di/dt=100A/µs
THs=85°C
100% Duty Cycle
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
500A
3kA
5kA
1.5kA
1kA
R1275NC14x-21x
Issue 3
di/dt=500A/µs
THs=85°C
100% Duty Cycle
2kA
1.00E+02
1.00E+01
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 10 of 12 August 2012
1.00E+00
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse
1.00E+03
R1275NC14x-21x
Issue 3
di/dt=100A/µs
Tj=125°C
1.00E+03
R1275NC14x-21x
Issue 3
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+01
5kA
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
1.00E-05 1.00E-04 1.00E-03 1.00E-02
3kA
2kA
1.5kA
1kA
500A
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
I2t: V
1.00E+02
5kA
3kA
1.00E+01
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
1.00E-05 1.00E-04 1.00E-03 1.00E-02
≤10V
RRM
2kA
Pulse width (s)
I2t: 60% V
RRM
1.5kA
1kA
500A
1.00E+07
(A)
TSM
s)
2
t (A
2
10000
I
TSM
: V
RRM
≤10V
1.00E+06
Maximum I
I
: 60% V
Total peak half sine surge current - I
TSM
Tj (initial) = 125°C
RRM
R1275NC14x-21x
Issue 3
1000
135101
5
10 50 100
1.00E+05
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 11 of 12 August 2012
Outline Drawing & Ordering Information
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
101A223
ORDERING INFORMATION (Please quote 10 digit code as below)
R1275 NC
Fixed
Type Code
Typical order code: R1275NC21L – 2100V V
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Fixed
Outline Code
, 1800V V
DRM
, 65µs tq, 27.7mm clamp height capsule.
RRM
♦ ♦
Fixed Voltage Code
V
/100
DRM
14-21
x
t
Code
q
L=65µs, M=70µs
© IXYS UK Westcode Ltd.
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3 Page 12 of 12 August 2012
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