Westcode Semiconductors R1271NC12x Data Sheet

Date:- 01 August 2012

2

Data Sheet Issue:- 2

Distributed Gate Thyristor

Type R1271NC12x

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1200 V
Non-repetitive peak off-state voltage, (note 1) 1200 V
Repetitive peak reverse voltage, (note 1) 1200 V
Non-repetitive peak reverse voltage, (note 1) 1300 V

OTHER RATINGS

I

Mean on-state current, T

T(AV)

I

Mean on-state current. T

T(AV)

I

Mean on-state current. T

T(AV)

I

Nominal RMS on-state current, T

T(RMS)

I

D.C. on-state current, T

T(d.c.)

I

Peak non-repetitive surge tp=10ms, VRM=0.6V

TSM

I

TSM2

I2t I2t capacity for fusing tp=10ms, VRM=0.6V
I2t

(di/dt)cr

V

RGM

P

G(AV)

PGM Peak forward gate power 30 W
VGD Non-trigger gate voltage, (Note 7) 0.25 V
THS Operating temperature range -40 to +125 °C
T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

7) Rated V

Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)

2

t capacity for fusing tp=10ms, VRM≤10V, (note 5)

I
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs

Peak reverse gate voltage 5 V

Mean forward gate power 2 W

Storage temperature range -40 to +150 °C

initial.

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

.

DRM

j

=55°C, (note 2) 1271 A

sink

=85°C, (note 2) 821 A

sink

=85°C, (note 3) 458 A

sink

=25°C, (note 2) 2599 A

sink

=25°C, (note 4) 2050 A

sink

, (note 5) 18.0 kA

RRM

, (note 5) 1.62×106 A

RRM

below 25°C.

j

=125°C.

case

MAXIMUM

LIMITS

MAXIMUM

LIMITS

19.8 kA

1.96×10

6

A

UNITS

UNITS

s

2

s

Data Sheet. Type R1271NC12x Issue 2 Page 1 of 12 August 2012

Distributed gate thyristor R1271NC12x

r

r

r

r

r

r

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

VTM Maximum peak on-state voltage - - 2.02 ITM=2000A V
VT0

rT
(dv/dt)cr Critical rate of rise of off-state voltage 200 - - VD=80% V

I

DRM

I

RRM

VGT Gate trigger voltage - - 3.0 Tj=25°C V
IGT Gate trigger current - - 300 Tj=25°C VD=10V, IT=2A mA
IH Holding current - - 1000 Tj=25°C mA
t

gd

t

gt

Q

rr

Q

ra

Irm Reverse recovery current - 85 - A
t

rr

tq Turn-off time (note 2)

R

thJK

F Mounting force 19 - 26 kN
Wt Weight - 510 - g

Threshold voltage - - 1.547 V
Slope resistance - - 0.237

, Linear ramp

DRM

Peak off-state current - - 150 Rated V
Peak reverse current - - 150 Rated V

Gate controlled turn-on delay time - 0.5 1.0
Turn-on time - 1.0 2.0

=67%V

V

D

=2A, tr≤0.5µs, T

I

FG

DRM

RRM

, ITM=2000A, di/dt=60A/µs,

DRM

case

=25°C
Recovered charge - 200 ­Recovered charge, 50% Chord - 120 150 µC

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V

r

Reverse recovery time, 50% chord - 2.0 - µs

I

=1000A, tp=1000µs, di/dt=60A/µs,

- - 22

12 - 25

TM

V

=50V, V

I

=1000A, tp=1000µs, di/dt=60A/µs,

TM

V

=50V, V

=80%V

d

=80%V

d

DRM

DRM

, dV
, dV

d

d

/dt=20V/µs
/dt=200V/µs

- - 0.024 Double side cooled

Thermal resistance, junction to heatsink

- - 0.048 Single side cooled

mΩ

V/µs

mA

µs

µC

µs

K/W

Notes:-

1) Unless otherwise indicated T

The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering information for

2)

details of t

codes.

q

=125°C.

j

Data Sheet. Type R1271NC12x Issue 2 Page 2 of 12 August 2012

Distributed gate thyristor R1271NC12x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table
V

Voltage Grade

DRM VDSM VRRM

V

12 1200 1300 810

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other t

/re-applied dv/dt combinations when supply has been agreed by

q

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(t

) and for the off-state voltage to reach full value (tv), i.e.

q

f

max

=

1

vqpulse ttt

++

V

RSM

V

VD VR

DC V

below 25°C.

j

Data Sheet. Type R1271NC12x Issue 2 Page 3 of 12 August 2012

Distributed gate thyristor R1271NC12x

(

)

⋅−=

(

)

⋅+⋅

)

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.

Let E
Let R
and T

Then the average dissipation will be:

be the Energy per pulse for a given current and pulse width, in joules

p

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

⋅= 125

11.0 Reverse recovery ratings

is based on 50% Irm chord as shown in Fig. 1 below.

(i) Q

ra

(ii) Q

is based on a 150µs integration time.

rr

i.e.

=

.)(max

150

RWT and fEW

()

−

Fig. 1

s

µ

dtiQ

.

rrrr

∫

0

HsJthAVSINKPAV

1

t

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s)

f = Rated frequency (in Hz) at the original heat sink temperature

R

Data Sheet. Type R1271NC12x Issue 2 Page 4 of 12 August 2012

= D.C. thermal resistance (°C/W)

th(J-Hs

FactorK =

−=

)()(

2

t

RfkETT

()

−

HsJthoriginalSINKnewSINK