Westcode Semiconductors R1211NC12x Data Sheet

Distributed gate thyristor type R1211NC12x

2

Date:- 01 August 2012
Data Sheet Issue:- 3

Distributed Gate Thyristor

Type R1211NC12x

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1200 V
Non-repetitive peak off-state voltage, (note 1) 1200 V
Repetitive peak reverse voltage, (note 1) 1200 V
Non-repetitive peak reverse voltage, (note 1) 1300 V

OTHER RATINGS

I

Mean on-state current, T

T(AV)

I

Mean on-state current. T

T(AV)

I

Mean on-state current. T

T(AV)

I

Nominal RMS on-state current, T

T(RMS)

I

D.C. on-state current, T

T(d.c.)

I

Peak non-repetitive surge tp=10ms, VRM=0.6V

TSM

I

TSM2

Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
I2t I2t capacity for fusing tp=10ms, VRM=0.6V
I2t

(di/dt)cr

V

RGM

P

G(AV)

2

I

t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs

Peak reverse gate voltage 5 V

Mean forward gate power 2 W
PGM Peak forward gate power 30 W
VGD Non-trigger gate voltage, (Note 7) 0.25 V
THS Operating temperature range -40 to +125 °C
T

Storage temperature range -40 to +150 °C

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

7) Rated V

Data Sheet Type R1211NC12x Issue 3 Page 1 of 12 August 2012

, IFG=2A, tr≤0.5µs, T

DRM

.

DRM

initial.

j

=55°C, (note 2) 1211 A

sink

=85°C, (note 2) 771 A

sink

=85°C, (note 3) 424 A

sink

=25°C, (note 2) 2497 A

sink

=25°C, (note 4) 1927 A

sink

, (note 5) 17.6 kA

RRM

, (note 5) 15.48×105 A

RRM

below 25°C.

j

=125°C.

case

MAXIMUM

LIMITS

MAXIMUM

LIMITS

UNITS

UNITS

19.4 kA
s

18.82×10

5

A

2

s

Distributed gate thyristor type R1211NC12x

r

r

r

r

r

r

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

VTM Maximum peak on-state voltage - - 2.18 ITM=2000A V
VT0 Threshold voltage - - 1.7 V
rT Slope resistance - - 0.2
(dv/dt)cr Critical rate of rise of off-state voltage 200 - - VD=80% V
I

Peak off-state current - - 150 Rated V

DRM

I

Peak reverse current - - 150 Rated V

RRM

, linear ramp

DRM

mA

DRM

mA

RRM

VGT Gate trigger voltage - - 3.0 Tj=25°C V
IGT Gate trigger current - - 300 Tj=25°C VD=10V, IT=3A mA
IH Holding current - - 1000 Tj=25°C mA
Q

rr

Q

ra

Irm Reverse recovery current - 80 - A
t

rr

tq Turn-off time

Recovered charge - 230 ­Recovered charge, 50% Chord - 100 130 µC

I

=1000A, tp=1000µs, di/dt=60A/µs,

TM

V

=50V

r

Reverse recovery time - 2.4 - µs

- - 23

15 - 25

ITM=1000A, tp=1000µs, di/dt=60A/µs,
V

=50V, V

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, V

=80%V

d

=80%V

d

DRM

DRM

, dV

/dt=20V/µs

d

, dV

/dt=200V/µs

d

- - 0.024 Double side cooled K/W

R

thJK

Thermal resistance, junction to heatsink

- - 0.048 Single side cooled K/W
F Mounting force 19 - 26 kN
Wt Weight - 510 - g

mΩ

V/µs

µC

µs

Notes:-

1) Unless otherwise indicated T

2)

The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of t

codes.

q

=125°C.

j

Data Sheet Type R1211NC12x Issue 3 Page 2 of 12 August 2012

Distributed gate thyristor type R1211NC12x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

VD VR

DC V

12 1200 1300 810

2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time
This Report is applicable to other t

/re-applied dv/dt combinations when supply has been agreed by

q

Sales/Production.

4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25oC.

j

6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t

) and for the off-state voltage to reach full value (tv), i.e.

q

f

max

=

1

vqpulse ttt

++

Data Sheet Type R1211NC12x Issue 3 Page 3 of 12 August 2012

Distributed gate thyristor type R1211NC12x

(

)

⋅−=

(

)

⋅+⋅

10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.
Let E

Let R
and T

Then the average dissipation will be:

be the Energy per pulse for a given current and pulse width, in joules

p

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

⋅= 125

11.0 Reverse recovery ratings
is based on 50% Irm chord as shown in Fig. 1 below.

(i) Q

ra

(ii) Q

is based on a 150µs integration time.

rr

i.e.

=

.)(max

150

RWT and fEW

()

−

Fig. 1

s

µ

dtiQ

.

rrrr

∫

0

HsJthAVSINKPAV

1

t

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:

where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.
R

Data Sheet Type R1211NC12x Issue 3 Page 4 of 12 August 2012

= d.c. thermal resistance (°C/W).

th(J-Hs)

FactorK =

−=

)()(

2

t

RfkETT

()

−

HsJthoriginalSINKnewSINK