Westcode Semiconductors R1158NS24#, R1158NS26# Data Sheet
Distributed Gate Thyristor
Type R1158NS24# to R1158NS26#
(Old Type Number: D350CH20-26)
Absolute Maximum Ratings
Date:- 9 May, 2003
Data Sheet Issue:- 1
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 2400-2600 V
Non-repetitive peak off-state voltage, (note 1) 2400-2600 V
Repetitive peak reverse voltage, (note 1) 2400-2600 V
Non-repetitive peak reverse voltage, (note 1) 2500-2700 V
OTHER RATINGS
I
T(AVM)
I
T(AVM)
I
T(AVM)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
(di/dt)
V
RGM
P
G(AV)
P
GM
T
j op
T
stg
Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, Vrm=0.6V
2
t capacity for fusing tp=10ms, V
I
Critical rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
cr
Critical rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 5 W
Peak forward gate power 30 W
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
MAXIMUM
LIMITS
MAXIMUM
LIMITS
=55°C, (note 2) 1158 A
sink
=85°C, (note 2) 769 A
sink
=85°C, (note 3) 445 A
sink
=25°C, (note 2) 2328 A
sink
=25°C, (note 4) 1920 A
sink
, (note 5) 14.5 kA
RRM
≤
10V, (note 5)
rm
RRM
≤
10V, (note 5)
rm
, (note 5) 1.05×10
16.0 kA
6
1.28×10
6
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 1 of 12 May, 2003
, IFG=2A, t
DRM
≤
0.5µs, T
r
case
=125°C.
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Characteristics
Distributed Gate Thyristor Types R1158NS24# to R1158NS26#
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
TM
V
TM
V
T0
r
T
(dv/dt)crCritical rate of rise of off-state voltage 200 - - VD=80% V
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
R
thJK
Maximum peak on-state voltage - - 2.40 ITM=2000A V
Maximum peak on-state voltage - - 2.95 ITM=3500A V
Threshold voltage - - 1.60 V
Slope resistance - - 0.40
Peak off-state current - - 100 Rated V
Peak reverse current - - 100 Rated V
Gate trigger voltage - - 3.0 V
T
Gate trigger current - - 300
Gate non-trigger voltage - - 0.25 Rated V
DRM
RRM
=25°C VD=10V, IT=3A
j
DRM
Holding current - - 1000 Tj=25°C mA
Gate controlled turn-on delay time - 0.7 1.5
Turn-on time - 1.5 3.0
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
Recovered charge - 1600 - µC
Recovered charge, 50% Chord - 900 1000 µC
Reverse recovery current - 240 - A
I
=1000A, tp=1000µs, di/dt=60A/µs,
TM
V
=50V
r
Reverse recovery time - 7.5 -
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
=50V, Vdr=33%V
r
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
=50V, Vdr=33%V
r
Turn-off time (note 2)
Thermal resistance, junction to heatsink
- - 100
100 - 120
- - 0.022 Double side cooled K/W
- - 0.044 Single side cooled K/W
(Note 1)
, Linear ramp, Gate o/c
DRM
, ITM=1000A, di/dt=60A/µs,
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
mA
V
µs
µs
µs
F Mounting force 19 - 26 kN
W
Weight - 510 - g
t
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information
2)
for details of t
Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 2 of 12 May, 2003
codes.
q
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Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Distributed Gate Thyristor Types R1158NS24# to R1158NS26#
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
24 2400 2500 1450
26 2600 2700 1550
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
(t
p1
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I
should remain flowing for the same duration as the anode current and have a
G
.
GT
Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 3 of 12 May, 2003
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(
)
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9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
An IXYS Company
Distributed Gate Thyristor Types R1158NS24# to R1158NS26#
=
1
max
f
++
ttt
vqpulse
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
Then the average dissipation will be:
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
125
.)(max
⋅−=⋅=
RWT and fEW
()
−
HsJthAVSINKPAV
Fig. 1
(ii) Qrr is based on a 150µs integration time i.e.
(iii)
FactorK
Data Sheet. Types R1158NS24# to R1158NS26# Issue 1 Page 4 of 12 May, 2003
=
150
µ
s
dtiQ
.
rrrr
∫
0
t
1
=
t
2
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