Westcode Semiconductors R1127NC32#, R1127NC36# Data Sheet

Distributed Gate Thyristor

Type R1127NC32# to R1127NC36#

(Old Type Number: D315CH21-36)

Absolute Maximum Ratings

Date:- 18 Feb, 2003

Data Sheet Issue:- 2

VOLTAGE RATINGS

V

DRM

V

DSM

V

RRM

V

RSM

Repetitive peak off-state voltage, (note 1) 3200-3600 V

Non-repetitive peak off-state voltage, (note 1) 3200-3600 V

Repetitive peak reverse voltage, (note 1) 3200-3600 V

Non-repetitive peak reverse voltage, (note 1) 3300-3700 V

OTHER RATINGS

I

T(AV)M

I

T(AV)M

I

T(AV)M

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2tI

I2t

(di/dt)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

Maximum average on-state current, T

Maximum average on-state current. T

Maximum average on-state current. T

Nominal RMS on-state current, T

D.C. on-state current, T

Peak non-repetitive surge tp=10ms, Vrm=0.6V

Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

2

t capacity for fusing tp=10ms, Vrm=0.6V

2

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

I

Critical rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs

cr

Critical rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs

Peak reverse gate voltage 5 V

Mean forward gate power 5 W

Peak forward gate power 30 W

Operating temperature range -40 to +125 °C

Storage temperature range -40 to +150 °C

MAXIMUM

LIMITS

MAXIMUM

LIMITS

=55°C, (note 2) 1127 A

sink

=85°C, (note 2) 760 A

sink

=85°C, (note 3) 448 A

sink

=25°C, (note 2) 2247 A

sink

=25°C, (note 4) 1895 A

sink

, (note 5) 12.8 kA

RRM

14.1 kA

994×10

3

3

, (note 5) 819×10

RRM

UNITS

UNITS

A2s

A2s

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

=67% V

D

Data Sheet. Type R1127NC32# to R1127NC36# Issue 2 Page 1 of 12 February, 2003

, IFG=2A, tr≤0.5µs, T

DRM

initial.

j

case

=125°C.

below 25°C.

j

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Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

TM

V

TM

V

T0

r

T

(dv/dt)crCritical rate of rise of off-state voltage 200 - - VD=80% V

I

DRM

I

RRM

V

GT

I

GT

V

GD

I

H

t

gd

t

gt

Q

rr

Q

ra

I

rm

t

rr

t

q

R

thJK

Maximum peak on-state voltage - - 2.42 ITM=2000A V

Maximum peak on-state voltage - - 3.05 ITM=3380A V

Threshold voltage - - 1.5 V

Slope resistance - - 0.474

, Linear ramp, Gate o/c

DRM

Peak off-state current - - 100 Rated V

Peak reverse current - - 100 Rated V

Gate trigger voltage - - 3.0 V

T

Gate trigger current - - 300

Gate non-trigger voltage - - 0.25 Rated V

DRM

RRM

=25°C VD=10V, IT=3A

j

DRM

mΩ

V/µs

mA

mA

mA

V

Holding current - - 1000 Tj=25°C mA

Gate controlled turn-on delay time - 0.8 1.6

Turn-on time - 2.0 3.0

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

, ITM=1000A, di/dt=60A/µs,

DRM

µs

Recovered charge - 3500 - µC

Recovered charge, 50% Chord - 1500 1800 µC

Reverse recovery current - 315 - A

Reverse recovery time - 9.5 -

120 - 200

Turn-off time (note 2)

160 - 250

Thermal resistance, junction to heatsink

- - 0.022 Double side cooled K/W

I

=1000A, tp=1000µs, di/dt=60A/µs,

TM

V

=50V

r

ITM=1000A, tp=1000µs, di/dt=60A/µs,
V

=50V, Vdr=33%V

r

, dVdr/dt=20V/µs

DRM

ITM=1000A, tp=1000µs, di/dt=60A/µs,
V

=50V, Vdr=33%V

r

, dVdr/dt=200V/µs

DRM

µs

µs

- - 0.044 Single side cooled K/W

F Mounting force 19 - 26 kN

W

Weight - 510 - g

t

Notes:-

1) Unless otherwise indicated T

2) The required t

details of t

Data Sheet. Type R1127NC32# to R1127NC36# Issue 2 Page 2 of 12 February, 2003

(specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for

q

codes.

q

=125°C.

j

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

V

V

D

DC V

R

32 3200 3300 1800
34 3400 3500 1850
36 3600 3700 1900

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

7.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

(t

p1

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

should remain flowing for the same duration as the anode current and have a

G

GT

.

Data Sheet. Type R1127NC32# to R1127NC36# Issue 2 Page 3 of 12 February, 2003

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)

t

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9.0 Frequency Ratings

The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.

10.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

11.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.

12.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

f

13.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.

Then the average dissipation will be:

14.0 Reverse recovery ratings

(i) Qra is based on 50% Irm chord as shown in Fig. 1

=

vqpulse ttt

++

be the Energy per pulse for a given current and pulse width, in joules

Let E

p

Let R
and T

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

.)(max

⋅−=⋅= 125

RWT and fEW

()

HsJthAVSINKPAV

−

Fig. 1

max

1

(ii) Qrr is based on a 150µs integration time i.e.

(iii)

=

FactorK =

150

s

µ

dtiQ

.

rrrr

∫

0

t

1

2

Data Sheet. Type R1127NC32# to R1127NC36# Issue 2 Page 4 of 12 February, 2003