Westcode Semiconductors R0878LS16x, R0878LS21x Data Sheet
Date:- 11 Jun, 2001
WESTCODE
Data Sheet Issue:- 1
Distributed Gate Asymmetric Thyristor
Types R0878LS16x to R0878LS21x
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 1600-2100 V
Non-repetitive peak off-state voltage, (note 1) 1600-2100 V
Repetitive peak reverse voltage, (note 1) 1300-1800 V
Non-repetitive peak reverse voltage, (note 1) 1400-1900 V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
t capacity for fusing tp=10ms, V
I
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
=55°C, (note 2) 878 A
sink
=85°C, (note 2) 583 A
sink
=85°C, (note 3) 338 A
sink
=25°C, (note 2) 1765 A
sink
=25°C, (note 4) 1456 A
sink
, (note 5) 7500 A
RRM
≤
10V, (note 5)
RM
, (note 5) 281×10
RRM
≤
10V, (note 5)
RM
MAXIMUM
LIMITS
MAXIMUM
LIMITS
8250 A
3
3
340×10
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Types R0878LS16x to R0878LS21x Issue 1 Page 1 of 12 June, 2001
DRM
, IFG=2A, t
DRM
.
≤
0.5µs, T
r
case
=125°C.
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Characteristics
R0878LS16x to R0878LS21x
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
V
r
s
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I
DRM
I
RRM
V
I
GT
I
H
t
gt
t
gd
Q
Q
I
rr
t
rr
t
q
R
Maximum peak on-state voltage - - 2.12 ITM=1400A V
TM
Threshold voltage - - 1.447 V
0
Slope resistance - - 0.480
Peak off-state current - - 70 Rated V
Peak reverse current - - 70 Rated V
Gate trigger voltage - - 3.0 V
GT
T
Gate trigger current - - 300
DRM
RRM
=25°C VD=10V, IT=3A
j
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time - 0.8 2.0 µs
Turn-on time - 1.5 3.5
Recovered charge - 720 - µC
rr
Recovered charge, 50% Chord - 350 400 µC
ra
Reverse recovery current - 160 - A
=67% V
V
D
I
=2A, tr=0.5µs, Tj=25°C
FG
I
=1000A, tp=1000µs, di/dt=60A/µs,
TM
V
=50V
r
Reverse recovery time - 4.4 -
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
=50V, Vdr=80%V
r
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
=50V, Vdr=80%V
r
Turn-off time (note 2)
Thermal resistance, junction to heatsink
th(j-hs)
--65
60 - 70
- - 0.032 Double side cooled K/W
- - 0.064 Single side cooled K/W
(Note 1)
, linear ramp
DRM
, IT=1500A, di/dt=60A/µs,
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
UNITS
m
V/µs
mA
mA
mA
µs
µs
µs
F Mounting force 10 - 20 kN
W
Weight - 340 - g
t
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
2)
for details of t
Data Sheet. Types R0878LS16x to R0878LS21x Issue 1 Page 2 of 12 June, 2001
codes.
q
WESTCODE
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
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R0878LS16x to R0878LS21x
V
Voltage Grade
16 1600 1300 1400 1040 870
18 1800 1500 1600 1150 985
20 2000 1700 1800 1250 1095
21 2100 1800 1900 1300 1150
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
DRM VDSM
V
V
RRM
V
V
RSM
V
V
D
DC V
V
R
DC V
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
1
=
max
f
++
vqpulse
ttt
Data Sheet. Types R0878LS16x to R0878LS21x Issue 1 Page 3 of 12 June, 2001
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(
)
(
)
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
Positive development in power electronics
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
R0878LS16x to R0878LS21x
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
is based on a 150µs integration time.
(ii) Q
rr
i.e.
=
.)(max
150
∫
0
µ
s
rrrr
125
Fig. 1
.
dtiQ
⋅−=⋅=
RWT and fEW
()
−
HsJthAVSINKPAV
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
= d.c. thermal resistance (°C/W).
R
th(J-Hs)
Data Sheet. Types R0878LS16x to R0878LS21x Issue 1 Page 4 of 12 June, 2001
FactorK
)()(
=
2
t
⋅+⋅−=
RfkETT
()
−
HsJthoriginalSINKnewSINK
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