Westcode Semiconductors R0717LC14x, R0717LC16x Data Sheet

Date:- 01 August 2012

2

Data Sheet Issue:- 3

Distributed Gate Thyristor

Types R0717LC14x-16x

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1400-1600 V
Non-repetitive peak off-state voltage, (note 1) 1400-1600 V
Repetitive peak reverse voltage, (note 1) 1400-1600 V
Non-repetitive peak reverse voltage, (note 1) 1500-1700 V

OTHER RATINGS

I

Mean on-state current, T

T(AV)

I

Mean on-state current. T

T(AV)

I

Mean on-state current. T

T(AV)

I

Nominal RMS on-state current, T

T(RMS)

I

D.C. on-state current, T

T(d.c.)

I

Peak non-repetitive surge tp=10ms, VRM=0.6V

TSM

I

TSM2

I2t I2t capacity for fusing tp=10ms, VRM=0.6V
I2t

(di/dt)cr

V

RGM

P

G(AV)

PGM Peak forward gate power 30 W
VGD Non-trigger gate voltage, (Note 7) 0.25 V
THS Operating temperature range -40 to +125 °C
T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

7) Rated V

Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)

I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs

Peak reverse gate voltage 5 V

Mean forward gate power 2 W

Storage temperature range -40 to +150 °C

initial.

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

.

DRM

j

=55°C, (note 2) 717 A

sink

=85°C, (note 2) 477 A

sink

=85°C, (note 3) 277 A

sink

=25°C, (note 2) 1439 A

sink

=25°C, (note 4) 1191 A

sink

, (note 5) 7050 A

RRM

, (note 5) 248.5×103 A

RRM

below 25°C.

j

=125°C.

case

MAXIMUM

LIMITS

MAXIMUM

LIMITS

7800 A

304.2×103 A

UNITS

UNITS

2

s
s

Data Sheet. Types R0717LC14x-16x Issue 3 Page 1 of 12 August, 2012

R0717LC14x-16x

r

r

r

r

r

r

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

VTM Maximum peak on-state voltage - - 2.8 ITM=1400A V
VT0 Threshold voltage - - 1.752 V
rT Slope resistance - - 0.732
(dv/dt)cr Critical rate of rise of off-state voltage 200 - - VD=80% V
I

Peak off-state current - - 70 Rated V

DRM

I

Peak reverse current - - 70 Rated V

RRM

VGT Gate trigger voltage - - 3.0
IGT Gate trigger current - - 300 mA

=25°C VD=10V, IT=2A

T

j

, linear ramp

DRM

mA

DRM

mA

RRM

IH Holding current - - 1000 Tj=25°C mA
t

gd

tgt Turn-on time -

Gate-controlled turn-on delay time -

V

=67% V

D

I

=2A, tr=0.5µs, T

FG

DRM

, ITM=1000A, di/dt=60A/µs,

=25°C

case

Qrr Recovered charge - 425 ­Q

ra

Irm Reverse recovery current - 100 - A

Recovered charge, 50% Chord - 150 200 µC

I

=1000A, tp=1000µs, di/dt=60A/µs,

TM

V

=50V

r

trr Reverse recovery time - 3.0 - µs

=1000A, tp=1000µs, di/dt=60A/µs,

I

tq Turn-off time - - 40
35 - 40

R

thJK

Thermal resistance, junction to heatsink - - 0.032 Double side cooled K/W

TM

V

=50V, V

=1000A, tp=1000µs, di/dt=60A/µs,

I

TM

V

=50V, V

=33%V

d

=33%V

d

DRM

DRM

, dV

/dt=20V/µs

d

, dV

/dt=200V/µs

d

- - 0.064 Single side cooled K/W
F Mounting force 10 - 20 kN
Wt Weight - 340 - g

mΩ

V/µs

V

µs

µC

µs

Notes:-

1) Unless otherwise indicated T

2)

The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of t

codes.

q

=125°C.

j

Data Sheet. Types R0717LC14x-16x Issue 3 Page 2 of 12 August, 2012

R0717LC14x-16x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

VD VR

DC V
14 1400 1500 930
16 1600 1700 1040

2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time
This Report is applicable to other t

/re-applied dv/dt combinations when supply has been agreed by

q

Sales/Production.

4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25°C.

j

6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t

) and for the off-state voltage to reach full value (tv), i.e.

q

f

max

=

1

vqpulse ttt

++

Data Sheet. Types R0717LC14x-16x Issue 3 Page 3 of 12 August, 2012

R0717LC14x-16x

(

)

⋅−=

(

)

⋅+⋅

−

10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.
Let E

Let R
and T

Then the average dissipation will be:

be the Energy per pulse for a given current and pulse width, in joules

p

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

⋅= 125

11.0 Reverse recovery ratings
is based on 50% Irm chord as shown in Fig. 1 below.

(i) Q

ra

(ii) Q

is based on a 150µs integration time.

rr

i.e.

=

.)(max

150

RWT and fEW

()

−

Fig. 1

s

µ

dtiQ

.

rrrr

∫

0

HsJthAVSINKPAV

1

t

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:

FactorK =

=

where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.
R

Data Sheet. Types R0717LC14x-16x Issue 3 Page 4 of 12 August, 2012

= d.c. thermal resistance (°C/W).

th(J-Hs)

2

t

RfkETT

()

)()(

−

HsJthoriginalSINKnewSINK