Date:- 01 August 2012
2
Data Sheet Issue:- 3
Distributed Gate Thyristor
Types R0717LC14x-16x
Absolute Maximum Ratings
V
DRM
V
DSM
V
RRM
V
RSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) 1400-1600 V
Non-repetitive peak off-state voltage, (note 1) 1400-1600 V
Repetitive peak reverse voltage, (note 1) 1400-1600 V
Non-repetitive peak reverse voltage, (note 1) 1500-1700 V
OTHER RATINGS
I
Mean on-state current, T
T(AV)
I
Mean on-state current. T
T(AV)
I
Mean on-state current. T
T(AV)
I
Nominal RMS on-state current, T
T(RMS)
I
D.C. on-state current, T
T(d.c.)
I
Peak non-repetitive surge tp=10ms, VRM=0.6V
TSM
I
TSM2
I2t I2t capacity for fusing tp=10ms, VRM=0.6V
I2t
(di/dt)cr
V
RGM
P
G(AV)
PGM Peak forward gate power 30 W
VGD Non-trigger gate voltage, (Note 7) 0.25 V
THS Operating temperature range -40 to +125 °C
T
stg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
7) Rated V
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
I2t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Storage temperature range -40 to +150 °C
initial.
=67% V
D
, IFG=2A, tr≤0.5µs, T
DRM
.
DRM
j
=55°C, (note 2) 717 A
sink
=85°C, (note 2) 477 A
sink
=85°C, (note 3) 277 A
sink
=25°C, (note 2) 1439 A
sink
=25°C, (note 4) 1191 A
sink
, (note 5) 7050 A
RRM
, (note 5) 248.5×103 A
RRM
below 25°C.
j
=125°C.
case
MAXIMUM
LIMITS
MAXIMUM
LIMITS
7800 A
304.2×103 A
UNITS
UNITS
2
s
s
Data Sheet. Types R0717LC14x-16x Issue 3 Page 1 of 12 August, 2012
R0717LC14x-16x
r
r
r
r
r
r
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
VTM Maximum peak on-state voltage - - 2.8 ITM=1400A V
VT0 Threshold voltage - - 1.752 V
rT Slope resistance - - 0.732
(dv/dt)cr Critical rate of rise of off-state voltage 200 - - VD=80% V
I
Peak off-state current - - 70 Rated V
DRM
I
Peak reverse current - - 70 Rated V
RRM
VGT Gate trigger voltage - - 3.0
IGT Gate trigger current - - 300 mA
=25°C VD=10V, IT=2A
T
j
, linear ramp
DRM
mA
DRM
mA
RRM
IH Holding current - - 1000 Tj=25°C mA
t
gd
tgt Turn-on time -
Gate-controlled turn-on delay time -
V
=67% V
D
I
=2A, tr=0.5µs, T
FG
DRM
, ITM=1000A, di/dt=60A/µs,
=25°C
case
Qrr Recovered charge - 425 Q
ra
Irm Reverse recovery current - 100 - A
Recovered charge, 50% Chord - 150 200 µC
I
=1000A, tp=1000µs, di/dt=60A/µs,
TM
V
=50V
r
trr Reverse recovery time - 3.0 - µs
=1000A, tp=1000µs, di/dt=60A/µs,
I
tq Turn-off time - - 40
35 - 40
R
thJK
Thermal resistance, junction to heatsink - - 0.032 Double side cooled K/W
TM
V
=50V, V
=1000A, tp=1000µs, di/dt=60A/µs,
I
TM
V
=50V, V
=33%V
d
=33%V
d
DRM
DRM
, dV
/dt=20V/µs
d
, dV
/dt=200V/µs
d
- - 0.064 Single side cooled K/W
F Mounting force 10 - 20 kN
Wt Weight - 340 - g
mΩ
V/µs
V
µs
µC
µs
Notes:-
1) Unless otherwise indicated T
2)
The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of t
codes.
q
=125°C.
j
Data Sheet. Types R0717LC14x-16x Issue 3 Page 2 of 12 August, 2012
R0717LC14x-16x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
VD VR
DC V
14 1400 1500 930
16 1600 1700 1040
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other t
/re-applied dv/dt combinations when supply has been agreed by
q
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
below 25°C.
j
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(t
) and for the off-state voltage to reach full value (tv), i.e.
q
f
max
=
1
vqpulse ttt
++
Data Sheet. Types R0717LC14x-16x Issue 3 Page 3 of 12 August, 2012
R0717LC14x-16x
(
)
⋅−=
(
)
⋅+⋅
−
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let E
Let R
and T
Then the average dissipation will be:
be the Energy per pulse for a given current and pulse width, in joules
p
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
⋅= 125
11.0 Reverse recovery ratings
is based on 50% Irm chord as shown in Fig. 1 below.
(i) Q
ra
(ii) Q
is based on a 150µs integration time.
rr
i.e.
=
.)(max
150
RWT and fEW
()
−
Fig. 1
s
µ
dtiQ
.
rrrr
∫
0
HsJthAVSINKPAV
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
FactorK =
=
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
R
Data Sheet. Types R0717LC14x-16x Issue 3 Page 4 of 12 August, 2012
= d.c. thermal resistance (°C/W).
th(J-Hs)
2
t
RfkETT
()
)()(
−
HsJthoriginalSINKnewSINK
R0717LC14x-16x
⋅
(
⋅
⋅
r
The total dissipation is now given by:
(original)(TOT)
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
() ( )
Where T
T
SINK (original)
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (V
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
SINK (new)
is the required maximum heat sink temperature and
is the heat sink temperature given with the frequency ratings.
) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
rm
+=
−=
fEWW
)
fRETT
thoriginalSINKnewSINK
2
R
Where: V
C
R = Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Types R0717LC14x-16x Issue 3 Page 5 of 12 August, 2012
V
⋅= 4
S
r
di
C
⋅
dt
S
= Commutating source voltage
= Snubber capacitance
R0717LC14x-16x
(
p
p
14.0 Computer Modelling Parameters
14.1 Calculating V
The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
terms of I
using ABCD Coefficients
T
vs VT, on page 8 is represented in two ways;
T
and rT tangent used for rating purposes and
T0
given below:
T
in
T
)
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for V
which is limited to that plotted.
14.2 D.C. Thermal Impedance Calculation
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
= Thermal resistance at time t.
r
t
r
= Amplitude of pth term.
= Time Constant of r
τ
Term 1 2 3 4
rp
τ
p
Term 1 2 3 4 5
rp
τ
p
0.01771901 4.240625×10
0.7085781 0.1435833 0.03615196 2.130842×10
0.03947164 0.01022837 8.789912×10
4.090062 1.078983 0.08530917 0.01128791 1.240861×10
term.
th
agree with the true device characteristic over a current range,
T
125°C Coefficients
A 3.98669689
B -0.6124415
C 3.3411×10-5
D 0.08560893
−
=
np
⎛
⎜
∑
=
p
1
D.C. Double Side Cooled
D.C. Single Side Cooled
1
pt
⎜
⎝
-3
6.963806×10-3 3.043661×10-3
t
⎞
τ
p
⎟
err
−⋅=
⎟
⎠
-3
4.235162×10-3 1.907609×10-3
IDICIBAV ⋅+⋅+⋅+= ln
TTTT
-3
-3
Data Sheet. Types R0717LC14x-16x Issue 3 Page 6 of 12 August, 2012
R0717LC14x-16x
Curves
Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance
(A)
T
10000
Tj = 125°C
1000
(K/W)
0.01
(th)t
0.1
SSC 0.064K/W
DSC 0.032K/W
Instantaneous on-state current - I
R0717LC14x-16x
R0717LS14x-16x
Issue 3
100
012345
Instantaneous on-state voltage - V
Issue 2
(V)
T
Figure 3 - Gate characteristics - Trigger limits
7
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
Tj=25°C
6
5
Max VG dc
(V)
GT
4
IGT, V
GT
3
Gate Trigger Voltage - V
2
25°C
-10°C
125°C
1
IGD, V
GD
0
0 0.25 0.5 0.75 1
Gate Trigg er C u rre n t - I
-40°C
Min VG dc
(A)
GT
0.001
Transient Thermal Impedance - Z
R0717LC14x-16x
R0717LS14x-16x
Issue 3
0.0001
0.0001 0.001 0.01 0.1 1 10 100
Figure 4 - Gate characteristics - Power curves
20
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
Tj=25°C
18
16
14
(V)
GT
12
10
Max VG dc
Time (s)
Issue 2
8
Gate Trigger Voltage - V
6
4
2
0
0246810
PG 2W dc
Gate Trigger Current - I
PG Max 30W dc
Min VG dc
(A)
GT
Data Sheet. Types R0717LC14x-16x Issue 3 Page 7 of 12 August, 2012
R0717LC14x-16x
r
r
Figure 5 - Total recovered charge, Q
1000
(µC)
rr
Figure 6 - Recovered charge, Qra (50% chord)
r
1000
2000A
1500A
1000A
500A
(µC)
ra
2000A
1500A
1000A
500A
100
Total recovered charge - Q
Tj = 125°C
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
100
10 100 1000
Commutation rate - di/dt (A/µs)
Figure 7 - Peak reverse recovery current, Irm
1000
2000A
1500A
1000A
500A
(A)
RM
100
Recovered charge - Q
10
10 100 1000
Commutation rate - di/dt (A/µs)
Figure 8 - Maximum recovery time, t
10
(µs)
rr
Tj = 125°C
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
(50% chord)
r
2000A
1500A
1000A
500A
Reverse recovery current - I
R0717LS14x-16x
R0717LC14x-16x
10
10 100 1000
Commutation rate - di/dt (A/µs)
Tj = 125°C
Issue 2
Issue 3
Reverse recovery time - t
Tj = 125°C
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
1
10 100 1000
Commutation rate - di/dt (A/µs)
Data Sheet. Types R0717LC14x-16x Issue 3 Page 8 of 12 August, 2012
R0717LC14x-16x
Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse
1000
2000A
(mJ)
r
1500A
1000A
500A
Energy per pulse - E
Snubber=0.22µF, 10
Tj = 125°C
V
rm
R0717LC14x-16x
R0717LS14x-16x
100
10 100 1000
Commutation rate - di/dt (A/µs)
= 67% V
Issue 3
Issue 2
Ω
RRM
1.00E+03
1.00E+02
1.00E+01
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
Tj=125°C
4000A
2000A
1000A
500A
250A
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 11 - Sine wave frequency ratings
1.00E+05
500A
1.00E+04
1000A
2000A
1.00E+03
Frequency (Hz)
4000A
1.00E+02
1.00E+01
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse Width (s)
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
THs=55°C
Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+04
1.00E+03
250A
500A
1000A
2000A
100% Duty Cycle
Frequency (Hz)
1.00E+02
4000A
1.00E+01
THs=85°C
R0717LC14x-16x
R0717LS14x-16x
Issue 3
1.00E+00
Issue 2
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Data Sheet. Types R0717LC14x-16x Issue 3 Page 9 of 12 August, 2012
R0717LC14x-16x
Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings
1.00E+05
250A
1.00E+05
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
1.00E+00
500A
1000A
2000A
4000A
THs=55°C
di/dt=100A/µs
R0717LS14x-16x
R0717LC14x-16x
Issue 2
Issue 3
1.00E-05 1.00E-04 1.00E-03 1.00E-02
100% Duty Cycle
Pulse width (s)
1.00E+04
1.00E+03
Frequency (Hz)
1.00E+02
1.00E+01
250A
100% Duty Cycle
500A
1000A
2000A
4000A
THs=85°C
di/dt=100A/µs
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+04
1.00E+03
250A
500A
1000A
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
di/dt=500A/µs
THs=55°C
100% Duty Cycle
1.00E+05
1.00E+04
1.00E+03
250A
500A
1000A
100% Duty Cycle
2000A
Frequency (Hz)
1.00E+02
1.00E+01
4000A
1.00E+00
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Data Sheet. Types R0717LC14x-16x Issue 3 Page 10 of 12 August, 2012
Frequency (Hz)
1.00E+02
2000A
1.00E+01
THs=85°C
di/dt=500A/µs
R0717LC14x-16x
R0717LS14x-16x
Issue 3
1.00E+00
Issue 2
1.00E-05 1.00E-04 1.00E-03 1.00E-02
4000A
Pulse width (s)
R0717LC14x-16x
Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse
1.00E+03
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
di/dt=100A/µs
Tj=125°C
1.00E+03
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+01
4000A
1.00E+00
Energy per pulse (J)
1.00E-01
1.00E-02
2000A
1000A
500A
250A
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporari ly lose control of conduc tion angle
100000
R0717LC14x-16x
R0717LS14x-16x
Issue 3
Issue 2
1.00E+02
4000A
2000A
1.00E+01
1000A
1.00E+00
Energy per pulse (J)
500A
250A
1.00E-01
1.00E-02
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse width (s)
1.00E+07
(A)
TSM
10000
Tj (initial) = 125°C
I2t: V
RRM
I2t: 60% V
≤10V
RRM
1.00E+06
2
2
s)
t (A
Maximum I
RRM
≤
10V
RRM
1.00E+05
Total peak half sine surge current - I
1000
I
TSM
I
TSM
: V
: 60% V
1 35101 510 50100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
Data Sheet. Types R0717LC14x-16x Issue 3 Page 11 of 12 August, 2012
R0717LC14x-16x
Outline Drawing & Ordering Information
101A216
ORDERING INFORMATION (Please quote 10 digit code as below)
R0717 LC
Fixed
Type Code
Typical order code: R0717LC16G – 1.6kV V
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Fixed
Outline Code
, V
DRM
, 35µs tq, 27mm clamp height capsule.
RRM
Off-state Voltage Code
♦ ♦ ♦
V
DRM
14-16
/100
G=35µs, H=40µs
© IXYS UK Westcode Ltd.
t
Code
q
Data Sheet. Types R0717LC14x-16x Issue 3 Page 12 of 12 August, 2012
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