Westcode Semiconductors R0633YS10x, R0633YS12x Data Sheet
Date:- 25 Jun, 2001
WESTCODE
Distributed Gate Thyristor
Types R0633YS10x to R0633YS12x
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI
I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Repetitive peak off-state voltage, (note 1) 1000-1200 V
Non-repetitive peak off-state voltage, (note 1) 1000-1200 V
Repetitive peak reverse voltage, (note 1) 1000-1200 V
Non-repetitive peak reverse voltage, (note 1) 1100-1300 V
OTHER RATINGS
Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
2
t capacity for fusing tp=10ms, V
I
Maximum rate of rise of on-state current (repetitive), (Note 6) 500 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C
=55°C, (note 2) 633 A
sink
=85°C, (note 2) 423 A
sink
=85°C, (note 3) 246 A
sink
=25°C, (note 2) 1269 A
sink
=25°C, (note 4) 1055 A
sink
, (note 5) 6.3 kA
RRM
≤
10V, (note 5)
RM
, (note 5) 200×10
RRM
≤
10V, (note 5)
RM
Data Sheet Issue:- 2
MAXIMUM
LIMITS
MAXIMUM
LIMITS
6.9 kA
3
3
240×10
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Data Sheet. Types R0633YS10x to R0633YS12x Issue 2 Page 1 of 12 June, 2001
DRM
, IFG=2A, t
DRM
.
≤
0.5µs, T
r
case
=125°C.
WESTCODE
)
Positive development in power electronics
Characteristics
R0663YS10x to R0633YS12x
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
V
r
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I
I
V
I
I
Q
Q
I
t
t
R
Maximum peak on-state voltage - - 1.85 ITM=1000A V
TM
Threshold voltage - - 1.25 V
0
Slope resistance - - 0.614
S
Peak off-state current - - 60 Rated V
DRM
Peak reverse current - - 60 Rated V
RRM
Gate trigger voltage - - 3.0 Tj=25°C V
GT
Gate trigger current - - 200 Tj=25°C VD=10V, IT=3A mA
GT
Holding current - - 1000 Tj=25°C mA
H
Recovered charge - 125 - µC
rr
Recovered charge, 50% Chord - 85 100 µC
ra
Reverse recovery current - 65 - A
rm
Reverse recovery time - 2.25 -
rr
--28
Turn-off time
q
20 - 30
Thermal resistance, junction to heatsink
th(j-hs
- - 0.050 Double side cooled K/W
- - 0.10 Single side cooled K/W
I
TM
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
V
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
V
DRM
RRM
=550A, tp=500µs, di/dt=40A/µs, Vr=50V
=80%V
dr
=80%V
dr
, linear ramp
DRM
, dVdr/dt=20V/µs
DRM
, dVdr/dt=200V/µs
DRM
(Note 1)
UNITS
m
V/µs
mA
mA
µs
µs
F Mounting force 5.5 - 10 kN
W
Weight - 90 - g
t
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
2)
for details of t
codes.
q
Introduction
The R0633 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. They are therefore suitable for
medium current, medium frequency applications.
Data Sheet. Types R0633YS10x to R0633YS12x Issue 2 Page 2 of 12 June, 2001
WESTCODE
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Positive development in power electronics
R0663YS10x to R0633YS12x
V
Voltage Grade
10 1000 1100 700
12 1200 1300 810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25oC.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
1
=
max
f
++
vqpulse
ttt
Data Sheet. Types R0633YS10x to R0633YS12x Issue 2 Page 3 of 12 June, 2001
WESTCODE
(
)
(
)
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
Positive development in power electronics
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
R0663YS10x to R0633YS12x
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
is based on a 150µs integration time.
(ii) Q
rr
i.e.
=
.)(max
150
∫
0
µ
s
rrrr
125
Fig. 1
.
dtiQ
⋅−=⋅=
RWT and fEW
()
−
HsJthAVSINKPAV
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
= d.c. thermal resistance (°C/W).
R
th(J-Hs)
Data Sheet. Types R0633YS10x to R0633YS12x Issue 2 Page 4 of 12 June, 2001
FactorK
)()(
=
2
t
⋅+⋅−=
RfkETT
()
−
HsJthoriginalSINKnewSINK
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