Westcode Semiconductors R0633YC10x, R0633YC12x Data Sheet

Date:- 14 Jul, 2015
Data Sheet Issue:- 4

Distributed Gate Thyristor

Types R0633YC10x to R0633YC12x

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1) 1200 V
Non-repetitive peak off-state voltage, (note 1) 1200 V
Repetitive peak reverse voltage, (note 1) 1200 V
Non-repetitive peak reverse voltage, (note 1) 1300 V

OTHER RATINGS

I

T(AV)

I

T(AV)

I

T(AV)

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2t I2t capacity for fusing tp=10ms, VRM=0.6V
I2t

diT/dt

V

RGM

P

G(AV)

P

GM

V

GD

T

HS

T

stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T

6) V

7) Rated V

Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T
Peak non-repetitive surge tp=10ms, VRM=0.6V

=55°C, (note 2) 633 A

sink

=85°C, (note 2) 423 A

sink

=85°C, (note 3) 246 A

sink

=25°C, (note 2) 1268 A

sink

=25°C, (note 4) 1054 A

sink

, (note 5) 6.3 kA

RRM

Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)

, (note 5) 200×10

RRM

2

I

t capacity for fusing tp=10ms, VRM≤10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6) 500 A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 2 W
Peak forward gate power 30 W
Non-trigger gate voltage, (Note 7) 0.25 V
Operating temperature range -40 to +125 °C
Storage temperature range -40 to +150 °C

below 25°C.

j

initial.

=67% V

D

, IFG=2A, tr≤0.5µs, T

DRM

.

DRM

j

=125°C.

case

Data Sheet. Type R0633YC12x Issue 4 Page 1 of 12 July, 2015

MAXIMUM

LIMITS

MAXIMUM

LIMITS

UNITS

UNITS

6.9 kA

240×10

3

3

A2s
A2s

Distributed Gate Thyristor R0633YC12x

Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V
V
r
dv/dt Critical rate of rise of off-state voltage 200 - - VD=80% V
I
I
V
I
I
Q
Q
I
t

t

R

Maximum peak on-state voltage - - 1.85 ITM=1000A V

TM

Threshold voltage - - 1.25 V

0

Slope resistance - - 0.614

S

, linear ramp

DRM

Peak off-state current - - 60 Rated V

DRM

Peak reverse current - - 60 Rated V

RRM

Gate trigger voltage - - 3.0 Tj=25°C V

GT

Gate trigger current - - 200 Tj=25°C VD=10V, IT=3A mA

GT

Holding current - - 1000 Tj=25°C mA

H

Recovered charge - 125 - µC

rr

Recovered charge, 50% Chord - 85 100 µC

ra

Reverse recovery current - 65 - A

rm

Reverse recovery time - 2.25 -

rr

- - 28

Turn-off time

q

20 - 30

Thermal resistance, junction to heatsink

th(j-hs)

- - 0.050 Double side cooled K/W

- - 0.10 Single side cooled K/W

I

I
V
I
V

DRM

RRM

=550A, tp=500µs, di/dt=40A/µs, Vr=50V

TM

=550A, tp=500µs, di/dt=40A/µs, Vr=50V,

TM

=80%V

dr

=550A, tp=500µs, di/dt=40A/µs, Vr=50V,

TM

=80%V

dr

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

mΩ

V/µs

mA
mA

µs

µs

F Mounting force 5.5 - 10 kN
W

Weight - 90 - g

t

Notes:-

1) Unless otherwise indicated T

2)

The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of t

codes.

q

=125°C.

j

Introduction

The R0633 Distributed Gate thyristor has fast switching characteristics provided by a regenerative,
interdigitated gate. It also exhibits low switching losses and is therefore suitable for medium current,
medium frequency applications.

Data Sheet. Type R0633YC12x Issue 4 Page 2 of 12 July, 2015

Distributed Gate Thyristor R0633YC12x

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

V

V

D

DC V

R

12 1200 1300 810

2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time
This Report is applicable to other t

/re-applied dv/dt combinations when supply has been agreed by

q

Sales/Production.

4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T

below 25oC.

j

6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

) and for the off-state voltage to reach full value (tv), i.e.

(t

q

f

max

=

1

vqpulse ttt

++

Data Sheet. Type R0633YC12x Issue 4 Page 3 of 12 July, 2015

Distributed Gate Thyristor R0633YC12x

(

)

⋅−=

(

)

⋅+⋅

10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.
Let E

Let R
and T

Then the average dissipation will be:

be the Energy per pulse for a given current and pulse width, in joules

p

be the steady-state d.c. thermal resistance (junction to sink)

th(J-Hs)

be the heat sink temperature.

SINK

⋅= 125

11.0 Reverse recovery ratings
(i) Q

is based on 50% Irm chord as shown in Fig. 1 below.

ra

(ii) Q

is based on a 150µs integration time.

rr

i.e.

=

.)(max

150

RWT and fEW

()

Fig. 1

s

µ

dtiQ

.

rrrr

∫

0

HsJthAVSINKPAV

−

1

t

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:

where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.
R

Data Sheet. Type R0633YC12x Issue 4 Page 4 of 12 July, 2015

= d.c. thermal resistance (°C/W).

th(J-Hs)

FactorK =

−=

)()(

2

t

RfkETT

()

−

HsJthoriginalSINKnewSINK