Westcode Semiconductors R0472YC12x, R0472YC16x Data Sheet

WESTCODE
Fast Turn-off Thyristor
Types P480CH20 to P480CH32

Absolute Maximum Ratings

Date:- 9 Dec, 1999 Rat. Rep:- 99T16 Issue:- 1
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1) 2000-3200 V Non-repetitive peak off-state voltage, (note 1) 2000-3200 V Repetitive peak reverse voltage, (note 1) 2000-3200 V Non-repetitive peak reverse voltage, (note 1) 2100-3300 V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I2tI I2t
diT/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Mean on-state current, T Mean on-state current. T Mean on-state current. T Nominal RMS on-state current, 25°C, (note 2) 2200 A D.C. on-state current, 25°C, (note 4) 1180 A Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
I2t capacity for fusing tp=10ms, V Maximum rate of rise of on-state current (repetitive), (Note 6) 300 A/µs Maximum rate of rise of on-state current (non-repetitive), (Note 6) 600 A/µs Peak reverse gate voltage 5 V Mean forward gate power 4 W Peak forward gate power 30 W Non-trigger gate voltage, (Note 7) 0.25 V Operating temperature range -40 to +125 °C Storage temperature range -40 to +150 °C
MAXIMUM
LIMITS
MAXIMUM
LIMITS
=55°C, (note 2) 1115 A
sink
=85°C, (note 2) 770 A
sink
=85°C, (note 3) 470 A
sink
, (note 5) 10.65 kA
RRM
RM
10V, (note 5)
RM
10V, (note 5)
, (note 5) 567×10
RRM
11.7 kA
3
3
686×10
UNITS
UNITS
A2s A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase;50Hz, 180° half-sinewave.
3)
Single side cooled, single phase;50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 1 of 13 December, 1999
DRM
, IFG=2A, t
DRM
.
0.5µs, T
r
case
=125°C.
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Positive development in power electronics

Characteristics

P480CH20 to P480CH32
PARAMETER MIN. TYP. MAX. TEST CONDITIONS
V
Maximum peak on-state voltage - - 1.87 ITM=1400A V
TM
V
Threshold voltage - - 1.144 V
0
r
Slope resistance - - 0.53
S
Critical rate of rise of off-state
dv/dt
voltage
I
Peak off-state current - - 150 Rated V
DRM
I
Peak reverse current - - 150 Rated V
RRM
V
Gate trigger voltage - - 3.0 Tj=25°C V
GT
I
Gate trigger current - - 300 Tj=25°C. VD=10V, IT=3A mA
GT
I
Holding current - - 1000 Tj=25°C mA
H
Q
Recovered charge, 50% Chord - 800 -
RA
t
Turn-off time
q
Thermal resistance, junction to
R
θ
heatsink
- - 200 VD=80% V
DRM
DRM
RRM
ITM=1000A, tp=1000µs, di/dt=60A/µs, V
=50V
R
I
=1000A, tp=1000µs, di/dt=60A/µs,
- - 300
- - 400
TM
V
=50V, VDR=80%V
R
=1000A, tp=1000µs, di/dt=60A/µs,
I
TM
V
=50V, VDR=80%V
R
dV
/dt=200V/µs
DR
- - 0.024 Double side cooled °C/W
- - 0.048 Single side cooled °C/W
(Note 1)
, dVDR/dt=20V/µs
DRM
,
DRM
UNITS
m
V/µs
mA
mA
µC
µs
µs
F Mounting force 19 - 26 kN
WtWeight - 510 - g
Notes:-
Unless otherwise indicated Tj=125°C.
1)
Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 2 of 13 December, 1999
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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Positive development in power electronics
P480CH20 to P480CH32
V
Voltage Grade 'H'
20 2000 2100 1250 22 2200 2300 1350 24 2400 2500 1450 26 2600 2700 1550 28 2800 2900 1650 30 3000 3100 1750 32 3200 3300 1800

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25oC.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn­on on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not exceed 300 A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
1
=
max
f
++
ttt
vqpulse
Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 3 of 13 December, 1999
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(
)
(
)

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings.
Then the average dissipation will be:
Positive development in power electronics
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
P480CH20 to P480CH32

11.0 Reverse recovery ratings

(i) QRA is based on 50% IRM chord as shown in Fig. 1 below.
(ii) Q
i.e.
is based on a 150µs integration time.
RR
=
.)(max
150
µ
0
125
Fig. 1
s
.
RRRR
==
RWT and fEW
()
HsJthAVSINKPAV
dtiQ
1
t
(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.) f = rated frequency Hz at the original heat sink temperature.
= d.c. thermal resistance (°C/W).
R
th(J-Hs)
Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1 Page 4 of 13 December, 1999
FactorK
)()(
=
2
t
+=
RfkETT
()
HsJthoriginalSINKnewSINK
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