Mean on-state current, T
Mean on-state current. T
Mean on-state current. T
Nominal RMS on-state current, 25°C, (note 2)2200A
D.C. on-state current, 25°C, (note 4)1180A
Peak non-repetitive surge tp=10ms, VRM=0.6V
Peak non-repetitive surge tp=10ms, V
2
t capacity for fusing tp=10ms, VRM=0.6V
I2t capacity for fusing tp=10ms, V
Maximum rate of rise of on-state current (repetitive), (Note 6)300A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6)600A/µs
Peak reverse gate voltage5V
Mean forward gate power4W
Peak forward gate power30W
Non-trigger gate voltage, (Note 7)0.25V
Operating temperature range-40 to +125°C
Storage temperature range-40 to +150°C
MAXIMUM
LIMITS
MAXIMUM
LIMITS
=55°C, (note 2)1115A
sink
=85°C, (note 2)770A
sink
=85°C, (note 3)470A
sink
, (note 5)10.65kA
RRM
≤
RM
≤
10V, (note 5)
RM
10V, (note 5)
, (note 5)567×10
RRM
11.7kA
3
3
686×10
UNITS
UNITS
A2s
A2s
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2)
Double side cooled, single phase;50Hz, 180° half-sinewave.
3)
Single side cooled, single phase;50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C Tj initial.
6)
VD=67% V
7)
Rated V
Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1Page 1 of 13December, 1999
DRM
, IFG=2A, t
DRM
.
≤
0.5µs, T
r
case
=125°C.
WESTCODE
Positive development in power electronics
Characteristics
P480CH20 to P480CH32
PARAMETERMIN.TYP.MAX. TEST CONDITIONS
V
Maximum peak on-state voltage--1.87ITM=1400AV
TM
V
Threshold voltage--1.144V
0
r
Slope resistance--0.53
S
Critical rate of rise of off-state
dv/dt
voltage
I
Peak off-state current--150Rated V
DRM
I
Peak reverse current--150Rated V
RRM
V
Gate trigger voltage--3.0Tj=25°CV
GT
I
Gate trigger current--300Tj=25°C.VD=10V, IT=3AmA
GT
I
Holding current--1000Tj=25°CmA
H
Q
Recovered charge, 50% Chord-800-
RA
t
Turn-off time
q
Thermal resistance, junction to
R
θ
heatsink
--200VD=80% V
DRM
DRM
RRM
ITM=1000A, tp=1000µs, di/dt=60A/µs,
V
=50V
R
I
=1000A, tp=1000µs, di/dt=60A/µs,
--300
--400
TM
V
=50V, VDR=80%V
R
=1000A, tp=1000µs, di/dt=60A/µs,
I
TM
V
=50V, VDR=80%V
R
dV
/dt=200V/µs
DR
--0.024 Double side cooled°C/W
--0.048 Single side cooled°C/W
(Note 1)
, dVDR/dt=20V/µs
DRM
,
DRM
UNITS
m
V/µs
mA
mA
µC
µs
µs
FMounting force19-26kN
WtWeight-510-g
Ω
Notes:-
Unless otherwise indicated Tj=125°C.
1)
Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1Page 2 of 13December, 1999
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
DRM VDSM VRRM
V
V
RSM
V
V
V
D
DC V
R
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25oC.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turnon on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not
exceed 300 A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
) and for the off-state voltage to reach full value (tv), i.e.
(t
q
1
=
max
f
++
ttt
vqpulse
Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1Page 3 of 13December, 1999
WESTCODE
(
)
(
)
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Then the average dissipation will be:
Positive development in power electronics
be the Energy per pulse for a given current and pulse width, in joules
Let E
p
Let R
and T
be the steady-state d.c. thermal resistance (junction to sink)
th(J-Hs)
be the heat sink temperature.
SINK
P480CH20 to P480CH32
11.0 Reverse recovery ratings
(i) QRA is based on 50% IRM chord as shown in Fig. 1 below.
(ii) Q
i.e.
is based on a 150µs integration time.
RR
=
.)(max
150
µ
∫
0
125
Fig. 1
s
.
RRRR
⋅−=⋅=
RWT and fEW
()
−
HsJthAVSINKPAV
dtiQ
1
t
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
= d.c. thermal resistance (°C/W).
R
th(J-Hs)
Types P480CH20 to P480CH32. Rating Report 99T16 Issue 1Page 4 of 13December, 1999
FactorK
)()(
=
2
t
⋅+⋅−=
RfkETT
()
−
HsJthoriginalSINKnewSINK
Loading...
+ 9 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.