Date:- 23 Oct 2014
Data Sheet Issue:- 2
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
V
DRM
Repetitive peak off-state voltage, (note 1)
1200 -1600
V
V
DSM
Non-repetitive peak off-state voltage, (note 1)
1200 -1600
V
V
RRM
Repetitive peak reverse voltage, (note 1)
1200 -1600
V
V
RSM
Non-repetitive peak reverse voltage, (note 1)
1300 - 1700
V
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
I
T(AV)M
Maximum average on-state current, T
sink
=55°C, (note 2)
472
A
I
T(AV)M
Maximum average on-state current. T
sink
=85°C, (note 2)
316
A
I
T(AV)M
Maximum average on-state current. T
sink
=85°C, (note 3)
185
A
I
T(RMS)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
945
A
I
T(d.c.)
D.C. on-state current, T
sink
=25°C, (note 4)
789
A
I
TSM
Peak non-repetitive surge tp=10ms, Vrm=60%V
RRM
, (note 5)
4300
A
I
TSM2
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
4700
A
I2t
I2t capacity for fusing tp=10ms, Vrm=60%V
RRM
, (note 5)
92.5×103
A2s
I2t
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
110.5×103
A2s
(di/dt)cr
Critical rate of rise of on-state current (repetitive), (Note 6)
500
A/µs
Critical rate of rise of on-state current (non-repetitive), (Note 6)
1000
A/µs
V
RGM
Peak reverse gate voltage
5
V
P
G(AV)
Mean forward gate power
2
W
PGM
Peak forward gate power
30
W
T
j op
Operating temperature range
-40 to +125
°C
T
stg
Storage temperature range
-40 to +150
°C
Distributed Gate Thyristor
Types R0472YC12x to R0472YC16x
Absolute Maximum Ratings
Notes:-
1) De-rating factor of 0.13% per °C is applicable for T
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C T
6) V
=67% V
D
, IFG=2A, tr0.5µs, T
DRM
initial.
j
=125°C.
case
Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 1 of 12 October, 2014
below 25°C.
j
Distributed Gate Thyristor types R0472YC12x to R0472YC16x
PARAMETER
MIN.
TYP.
MAX.
TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
- - 2.80
ITM=1000A
V
VTM
Maximum peak on-state voltage
- - 3.24
ITM=1416A
V
VT0
Threshold voltage
- - 1.648 V
rT
Slope resistance
- - 1.125
m
(dv/dt)cr
Critical rate of rise of off-state voltage
200 - -
VD=80% V
DRM
, Linear ramp, Gate o/c
V/s
I
DRM
Peak off-state current
- - 60
Rated V
DRM
mA
I
RRM
Peak reverse current
- - 60
Rated V
RRM
mA
VGT
Gate trigger voltage
- - 3.0
Tj=25°C VD=10V, IT=3A
V
IGT
Gate trigger current
- - 200
mA
VGD
Gate non-trigger voltage
- - 0.25
Rated V
DRM
V
IH
Holding current
- - 1000
Tj=25°C
mA
tgd
Gate controlled turn-on delay time
-
0.4
1.0
VD=67% V
DRM
, ITM=2000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
µs
tgt
Turn-on time
-
1.0
2.0
Qrr
Recovered charge
-
155
175
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V
µC
Qra
Recovered charge, 50% Chord
-
70 - µC
Irm
Reverse recovery current
-
60 - A
t
rr
Reverse recovery time, 50% Chord
-
2.5 - µs
tq
Turn-off time (note 2)
20 - 25
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%V
DRM
, dVdr/dt=20V/µs
µs
25 - 30
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%V
DRM
, dVdr/dt=200V/µs
R
thJK
Thermal resistance, junction to heatsink
- - 0.05
Double side cooled
K/W - -
0.10
Single side cooled
K/W
F
Mounting force
5 - 9 kN
Wt
Weight
-
90
- g
Characteristics
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dV
details of tq codes.
Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 2 of 12 October, 2014
/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
dr
Distributed Gate Thyristor types R0472YC12x to R0472YC16x
Voltage Grade
V
DRM VDSM VRRM
V
V
RSM
V
VD VR
DC V
1200
1200
1300
810
1600
1600
1700
1020
I
GM
I
G
t
p1
4A/µs
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 3 of 12 October, 2014
Distributed Gate Thyristor types R0472YC12x to R0472YC16x
vqpulse ttt
f
1
max
JKthAVKPAV
RWTfEW 125 and
.)(max
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150s integration time i.e.
s
rrrr
dtiQ
150
0
.
(iii)
2
1
t
t
FactorK
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let R
and TK be the heat sink temperature.
Then the average dissipation will be:
be the steady-state d.c. thermal resistance (junction to sink)
th(JK)
14.0 Reverse recovery ratings
Data Sheet. Types R0472YC12x to R0472YC16x Issue 2 Page 4 of 12 October, 2014
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